MPSA17
TO-92 Transistor (NPN)
TO-92
1.
EMITTER
2. BASE
3.
COLLECTOR
Features
High V
(BR)EBO
: 12V
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Ease Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
12
0.1
300
150
-55 to +150
Units
V
V
A
mW
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Test
I
C
= 1mA, I
E
=0
I
E
= 100μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=10V, I
C
=0
V
CE
=10V, I
C
=5mA
I
C
= 10mA, I
B
=1mA
V
CE
=10V,I
C
=5mA,f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
80
4
200
conditions
MIN
40
12
0.1
0.1
800
0.25
V
MHz
pF
MAX
UNIT
V
V
μA
μA
f
T
C
ob
Revision:20170701-P1
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t
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MPSA17
TO-92 Transistor (NPN)
Typical Characteristics
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
