,
Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MPS-U07
NPN SILICON ANNULAR
AMPLIFIER TRANSISTOR
NPN SILICON
AMPLIFIER TRANSISTOR
. . . designed for general-purpose, high-voltage amplifier and driver
applications.
/
/
n\
High Collector-Emitter Breakdown Voltage —
=
1-OmAdc
•
High Power Dissipation - Prj = 10 W @ T C = 25°C
Complement to PNP MPS-U57
.— A —
H-
^
— B—
Q
E B C
C
L
[
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Total Power Disiipaton @ T
A
- 25°C
Derate above 25°C
Total Power Disiipaton @ T
c
- 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
D—
K
100
Jok
-4— N
-JU.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
VEB
1.0
8.0
10
80
Watt
mW/°C
Watts
mW/°C
DIM
A
B
C
D
F
G
H
1
K
I
N
Q
R
MILLIMETERS
MIM
MAX
9.14
6.6G
5.41
0.38
3.18
3.94
0.36
9.53
7.24
5.66
0.53
3.33
4.19
0.41
INCHES
MIN
MAX
0.375
0.285
0.223
0.021
0.131
0.10
BSC
0.155
0.165
0.014
0.016
0.475 0.500
0.985
1.005
0.200 BSC
0.094
0.106
0,045 0.055
0,360
0.260
0.213
0.015
0,125
THERMAL CHARACTERISTICS
Characurittk
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
«JA
Symbol
2.'
4 B S C
12.5
°C/W
°C/W
12.07
12.70
25.02 25.53
5.1 3SC
18
2.39
2.69
1.40
.14
1
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Oiinlifv
c^emi-C-on.au.ctoi LPioaucti., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MPS-U07
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Off
CHARACTERISTICS
Collector-Emitter Breakdown Voltage ^'
(IC" I.OmAdc, IB *0)
Emitter-Base Breakdown Voltage
(I
E
- lOOuAdc. l
c
- 0 )
Collector Cutoff Current
(VCB
•= so
vdc,
IE -0)
ON CHARACTERISTICS
DC Current Gain 1 1 )
(l
c
- 50 mAdc. VCE •
1
°
vdc)
II
C
- 250 mAdc. VCE - '•<>
Vdc
>
(I
C
• 500 mAdc. V
CE
• 1 .0 Vdc)
Collector-Emitter Saturation Voltage Itl
(1C * 250 mAdc, IB
*
10 mAdc)
(IC-25OmAdc, IB = 25 mAdc)
Base-Emitter On Voltage HI
(I
C
- 250 mAdc. VCE " 5-0 Vdcl
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (11
(1C " 250 mAdc, VCE -5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB
- 10
vdc,
IE - o, f - 100
kHz)
T.Jt
Pulia Width 5300 Ml, Duty Cycle £2.0%
FIGURE 1 - DC CURRENT GAIN
200 1
VCE
-10V
Symbol
Typ
Mix
Unit
BVCEO
100
—
—
Vdc
BVEBO
4.0
-
-
-
100
Vdc
ICBO
-
nAdc
hFE
60
30
-
110
65
33
-
-
-
_
VCE (sat)
-
-
Vdc
0.18
0.1
0.4
-
1.2
Vdc
VflElon)
-
0.76
fr
Cob
50
—
150
6.0
-
12
MHz
pF
FIGURE 2 - "ON" VOLTAGES
Tj -7S»C
dt
-—
j .00-;
—~
l:^
^
s
":
s "--
s
u
*
s
\0 7.0
1C, COLLECTOR CURRENT (nvA)
TO
20
50
70
100
200
S«
50
100
200 300 SOD
IC.CQUECTORCUflRENTtmA)
FIGURE 3 - DC SAFE OPERATING AREA
S.O
FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT
IT. CURRENT GAIN-BANOWICTH PRODUCT (MHj
+***
yS'
"
\
i 2 £
S
s
I"
1C. COLLECTOR CtlRREI
!
--,
,'
/
VCE - s o v
dc
Tj * 25°C
s
\
A
\
ss
"
Z— —
111
und BrMkdown L<mittd
E
S
B
MlingWuiLimiMd
T
«m*t Lifflrt*t»M* TC *
S»C-
ppl.rtl.-ToBVcEO
^:
Mi
in
s
s
\. COLLeCTOft-EMITTEfl VOLTAGE (VOLTS)
0 7.0
\0
L
20
50 70
100
200
1C. COLLECTOR CURRENT <mA)
There are two limitations on the power handling ability of a
transistor: junction temperature and second breakdown. Safe
operating area curves indicate lc - VCE
lm
'
H
of
*"• transistor that
must be observed for reliable operation; i.e., the trantinor must
not be subjected to greater dissipation than the curves indicate.
The data of Figure 3 is based on Tj(
pk
) - 150°C; TC
a
variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
Quality Semi-Conductors
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