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MQ1N3051AUR-1E3TR

Zener Diode, 200V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERMETIC SEALED, LEADLESS, GLASS, MELF-2

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Microsemi
零件包装代码
DO-213AB
包装说明
O-LELF-R2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
其他特性
METALLURGICALLY BONDED, HIGH RELIABILITY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JEDEC-95代码
DO-213AB
JESD-30 代码
O-LELF-R2
JESD-609代码
e3
元件数量
1
端子数量
2
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
1.25 W
认证状态
Not Qualified
标称参考电压
200 V
表面贴装
YES
技术
ZENER
端子面层
MATTE TIN
端子形式
WRAP AROUND
端子位置
END
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
10%
工作测试电流
1.2 mA
Base Number Matches
1
文档预览
1N3016BUR-1 thru 1N3051BUR-1, e3
(or MLL3016B thru MLL3051B, e3)
SCOTTSDALE DIVISION
Surface Mount 1.5 W
GLASS ZENER DIODES
DESCRIPTION
This surface mountable zener diode series is similar to the 1N3016 thru
1N3051 JEDEC registration in the DO-13 package except that it meets the
surface mount DO-213AB outline. It is an ideal selection for applications of
high density and low parasitic requirements. Due to its glass hermetic seal
qualities and metallurgically enhanced internal construction, it is also well
suited for high-reliability applications. This can be acquired by a source
control drawing (SCD), or by ordering device types with MQ, MX, or MV
prefix to part number for equivalent screening to JAN, JANTX or JANTXV.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-213AB
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Leadless surface mount package equivalents to the
JEDEC registered 1N3016 thru 1N3051 except with
higher power rating of 1.5 Watts
Ideal for high-density mounting
Voltage range: 6.8 to 200 volts
Hermetically sealed, double-slug glass construction
Metallurgically enhanced contact construction.
Options for screening in accordance with MIL-PRF-
19500/115 for JAN, JANTX, JANTXV, and JANS with
MQ, MX, MV, or MSP prefixes respectively for part
numbers, e.g. MX1N3016BUR-1, MV1N3051BUR-1,
etc.
Axial lead “thru-hole” DO-13 packages per JEDEC
registration available as 1N3016B thru 1N3051B (see
separate data sheet with MIL-PRF-19500/115
qualification)
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range
Wide selection from 6.8 to 200 V
Tight voltage tolerances available
Low reverse (leakage) currents
Leadless package for surface mounting
Ideal for high-density mounting
Metallurgically enhanced internal contact design for
greater reliability and lower thermal resistance
Nonsensitive to ESD
Hermetically sealed glass package
Specified capacitance (see Figure 2)
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Power dissipation at 25
º
C: 1.5 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65
º
C to
+175
º
C
Thermal Resistance: 40
º
C/W junction to end cap,
º
or 120 C/W junction to ambient when mounted on
FR4 PC board (1 oz Cu) with recommended
footprint (see last page)
Steady-State Power: 1.50 watts at end-cap
temperature T
EC
< 115
o
C, or 1.25 watts at T
A
= 25
º
C
when mounted on FR4 PC board and
recommended footprint as described for thermal
resistance (also see Figure 1)
Forward voltage @200 mA: 1.2 volts (maximum)
º
Solder Temperatures: 260 C for 10 s (max)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed glass MELF package
TERMINALS: Tin-lead or RoHS compliant
annealed matte-Tin plating solderable per MIL-
STD-750, method 2026
POLARITY: Cathode indicated by band. Diode to
be operated with the banded end positive with
respect to the opposite end for Zener regulation
MARKING: Cathode band only
TAPE & REEL optional: Standard per EIA-481-1-A
with 12 mm tape, 1500 per 7 inch reel or 5000 per
13 inch reel (add “TR” suffix to part number)
WEIGHT: 0.05 grams
See package dimensions on last page
1N3016BUR-1, e3 thru
1N3051BUR-1, e3
Copyright
©
2006
3-12-2006 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N3016BUR-1 thru 1N3051BUR-1, e3
(or MLL3016B thru MLL3051B, e3)
SCOTTSDALE DIVISION
Surface Mount 1.5 W
GLASS ZENER DIODES
*ELECTRICAL CHARACTERISTICS @ 25
o
C
INDUSTRY
PART
NUMBER
**
MICROSEMI
PART
NUMBER
NOMINAL
ZENER
VOLTAGE
V
Z
@ I
ZT
(NOTE 1)
VOLTS
WWW .
Microsemi
.C
OM
ZENER
TEST
CURRENT
I
ZT
mA
MAXIMUM ZENER
IMPEDANCE
(Note 2)
MAXIMUM
ZENER
CURRENT
Z
ZT
@ I
ZT
OHMS
Z
ZK
@
OHMS
I
ZK
mA
I
ZM
mA
MAXIMUM
REVERSE
LEAKAGE
CURRENT
I
R
@ V
R
μA
Volts
TYPICAL
TEMP.COEFF
OF ZENER
VOLTAGE
α
VZ
%/
o
C
1N3016BUR-1
1N3017BUR-1
1N3018BUR-1
1N3019BUR-1
1N3020BUR-1
1N3021BUR-1
1N3022BUR-1
1N3023BUR-1
1N3024BUR-1
1N3025BUR-1
1N3026BUR-1
1N3027BUR-1
1N3028BUR-1
1N3029BUR-1
1N3030BUR-1
1N3031BUR-1
1N3032BUR-1
1N3033BUR-1
1N3034BUR-1
1N3035BUR-1
1N3036BUR-1
1N3037BUR-1
1N3038BUR-1
1N3039BUR-1
1N3040BUR-1
1N3041BUR-1
1N3042BUR-1
1N3043BUR-1
1N3044BUR-1
1N3045BUR-1
1N3046BUR-1
1N3047BUR-1
1N3048BUR-1
1N3049BUR-1
1N3050BUR-1
1N3051BUR-1
MLL3016B
MLL3017B
MLL3018B
MLL3019B
MLL3020B
MLL3021B
MLL3022B
MLL3023B
MLL3024B
MLL3025B
MLL3026B
MLL3027B
MLL3028B
MLL3029B
MLL3030B
MLL3031B
MLL3032B
MLL3033B
MLL3034B
MLL3035B
MLL3036B
MLL3037B
MLL3038B
MLL3039B
MLL3040B
MLL3041B
MLL3042B
MLL3043B
MLL3044B
MLL3045B
MLL3046B
MLL3047B
MLL3048B
MLL3049B
MLL3050B
MLL3051B
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
40
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
37
34
31
28
25
23
21
19
17
15.5
14.0
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
2.0
1.9
1.7
1.6
1.4
1.2
3.5
4.0
4.5
5
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
450
550
700
1000
1100
1200
1500
700
700
700
700
700
700
700
700
700
700
750
750
750
750
1000
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
6000
6500
7000
8000
1.0
.5
.5
.5
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
210
187.5
172.5
157.5
142.5
127.5
120
111
94.5
90
78
70.5
64.5
60
51
46.5
42
39
34.5
31.5
28.5
27
25.5
22.5
21
18
16.5
15
13.5
12.45
12
10.35
8.55
8.1
7.35
6.9
5
5
5
5
5
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
.040
.045
.048
.050
.055
.060
.065
.065
.070
.070
.075
.075
.080
.080
.085
.085
.085
.085
.090
.090
.090
.090
.090
.090
.090
.090
.090
.090
.090
.095
.095
.095
.095
.095
.095
.100
* JEDEC registered data for 1N3016B thru 3051B equivalents except reverse (leakage) currents I
R
are lower and maximum Zener current I
ZM
is higher.
** When applicable, add MQ, MX, MV, MSP prefix for 1N3016B to 1N3051B screening options in accordance with MIL-PRF-19500/115.
† Not JEDEC Data.
NOTE 1:
Suffix “B” shown signifies a +/-5% tolerance on nominal zener voltage. No suffix designates a +/-20% and suffix “A” is +/-10%. If tighter
tolerance is required, suffix C is used to identify +/-2%; and suffix D is to identify +/-1% tolerance. V
Z
is measured with the diode in
o
thermal equilibrium in 25 C still air. The test currents (I
ZT
) at nominal voltages provide a constant 0.25 watts for this device series.
NOTE 2:
The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (I
ZT
or I
ZK
) is
superimposed on I
ZT
or I
ZK
. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve and to eliminate
unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents.
NOTE 3:
This product series has previously been identified as MLL3016B thru MLL3051B by Microsemi. This alternate name may still be used,
however the Industry name of 1N3016BUR-1 thru 1N3051BUR-1 is preferred.
1N3016BUR-1, e3 thru
1N3051BUR-1, e3
Copyright
©
2006
3-12-2006 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N3016BUR-1 thru 1N3051BUR-1, e3
(or MLL3016B thru MLL3051B, e3)
SCOTTSDALE DIVISION
Surface Mount 1.5 W
GLASS ZENER DIODES
GRAPHS
WWW .
Microsemi
.C
OM
STEADY-STATE POWER DERATING
P
D
Power Dissipation (WATTS)
T
EC
T
A
Temperature (
o
C
)
FIGURE 1
Power Derating Curve Where T
EC
is End Cap Temp
and T
A
is Ambient Temperature on FR4 PC board.
FIGURE 2
Typical Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
DIM
A
B
C
INCHES
MIN
MAX
0.094
0.105
0.189
0.205
0.016
0.022
MILLIMETERS
MIN
MAX
2.39
2.66
4.80
5.20
0.41
0.55
1N3016BUR-1, e3 thru
1N3051BUR-1, e3
FIGURE 3
Typical Zener Voltage
Temperature Coeff. vs. Zener Voltage
A
B
C
Copyright
©
2006
3-12-2006 REV D
PAD LAYOUT
INCHES
.276
0.070
0.110
mm
7.00
1.8
2.8
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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