1N6358 – 1N6372 or
MPT-10 – MPT-45C
1500 Watt Low Clamping Factor
Transient Voltage Suppressor
Screening in
reference to
MIL-PRF-19500
available
Available
DESCRIPTION
This Transient Voltage Suppressor (TVS) series for 1N6358 through 1N6372 are JEDEC registered
selections for both unidirectional and bidirectional devices. The 1N6358 through 1N6364 are
unidirectional and the 1N6366 through 1N6372 are bidirectional where they all provide a very low
specified clamping factor for minimal clamping voltages (V
C
) above their respective breakdown
voltages (V
BR
) as specified herein. They are most often used in protecting sensitive components
from inductive switching transients or induced secondary lightning effects as found in lower surge
levels of IEC61000-4-5. They are also very successful in protecting airborne avionics and electrical
systems. Since their response time is virtually instantaneous, they can also protect from ESD and
EFT per IEC61000-4-2 and IEC61000-4-4.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
Unidirectional and bidirectional TVS series in axial package for thru-hole mounting.
Suppresses transients up to 1500 watts @ 10/1000 µs (see
figure 1).
t
clamping
(0 volts to V
(BR)
min):
Unidirectional – Less than 100 picoseconds.
Bidirectional – Less than 5 nanoseconds.
Working voltage (V
WM
) range 10 V to 45 V.
Low clamping factor (ratio of actual V
C
/V
BR
): 1.33 @ full rated power and 1.20 @ 50% rated power.
Hermetically sealed DO-13 metal package.
Upscreening in reference to MIL-PRF-19500 is available.
RoHS compliant versions available.
•
•
•
•
•
DO-13 (DO-202AA)
Package
APPLICATIONS / BENEFITS
•
•
•
•
Designed to protect bipolar and MOS microprocessor based systems
Protection from switching transients and induced RF.
Protection from ESD & EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance:
Class 1, 2 & 3: 1N6358 to 1N6372
Class 4: 1N6358 to 1N6362 and 1N6366 to 1N6370
Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance:
Class 1 & 2: 1N6358 to 1N6372
Class 3: 1N6358 to 1N6362 and 1N6366 to 1N6370
Class 4: 1N6358 and 1N6366
Secondary lightning protection per IEC61000-4-5 with 2 ohms source impedance:
Class 2: 1N6358 to 1N6361 and 1N6366 to 1N6369
Class 3: 1N6358 and 1N6366
Inherently radiation hard as described in Microsemi “MicroNote
050”.
•
•
•
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead @ 0.375 inch (10
mm) from body
Thermal Resistance, Junction to Ambient
(1)
Peak Pulse Power @ T
L
= +25 ºC
(2)
Rated Average Power Dissipation @ T
L
≤ +125 ºC
(3)
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJL
R
ӨJA
P
PP
P
M(AV)
T
SP
Value
-65 to +175
50
110
1500
1
260
Unit
ºC
ºC/W
ºC/W
W
W
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. When mounted on FR4 PC board with 4 mm
2
copper pads (1 oz) and track width 1 mm, length 25 mm.
2. At 10/1000
µs
with repetition rate of 0.01% or less (see
figures 1, 2, & 4).
3. At 3/8 inch (10 mm) from body (see derating in
figure 5).
TVS devices are not typically used for dc
power dissipation and are instead operated at or less than their rated standoff voltage (V
WM
) except for
transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
T4-LDS-0292, Rev. 1 (121800)
©2013 Microsemi Corporation
Page 1 of 7
1N6358 – 1N6372 or
MPT-10 – MPT-45C
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass.
TERMINALS: All external metal surfaces are tin-lead plated or RoHS compliant annealed matte-tin plating solderable per MIL-
STD-750 method 2026.
MARKING: Part number and polarity diode symbol.
POLARITY: Cathode connected to case and polarity indicated by diode symbol.
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 1.4 grams.
See
package dimensions
on last page.
PART NOMENCLATURE
MQ
Reliability Level
MQ (reference JAN)
MX (reference JANTX)
MV (reference JANTXV)
CDS (reference JANS)
Blank = Commercial
1N6358
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
JEDEC type number
(See
Electrical Characteristics
table)
Symbol
V
WM
V
(BR)
V
C
I
PP
P
PP
I
D
SYMBOLS & DEFINITIONS
Definition
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition.
o
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25 C.
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the peak pulse
current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise due to both the
series resistance and thermal rise and positive temperature coefficient (α
V(BR)
).
Peak Pulse Current: The peak current during the impulse. (See
figure 2)
Peak Pulse Power: The pulse power as determined by the product of V
C
and I
PP
.
Standby Current: The current at the standoff voltage (V
WM
).
T4-LDS-0292, Rev. 1 (121800)
©2013 Microsemi Corporation
Page 2 of 7
1N6358 – 1N6372 or
MPT-10 – MPT-45C
ELECTRICAL CHARACTERISTICS
@ 25 C (Both Polarities)
o
Unidirectional
STANDOFF
VOLTAGE
(NOTE 1)
V
WM
MAXIMUM
REVERSE
LEAKAGE
@V
WM
I
D
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V
(BR)
(min)
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
I
PP1
= 1A
V
C
Volts
13.7
16.1
20.1
24.2
29.8
50.6
63.3
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ I
PP2
= 10A
V
C
Volts
14.1
16.5
20.6
25.2
32.0
54.3
70.0
MAXIMUM
PEAK PULSE
CURRENT
I
PP3
A
90
70
60
50
40
23
19
MICROSEMI
Volts
Volts
PART NUMBER
µA
1N6358
MPT-10
10.0
2
11.7
1N6359
MPT-12
12.0
2
14.1
1N6360
MPT-15
15.0
2
17.6
1N6361
MPT-18
18.0
2
21.2
1N6362
MPT-22
22.0
2
25.9
1N6363
MPT-36
36.0
2
42.4
1N6364
MPT-45
45.0
2
52.9
V
F
at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave.
Bidirectional
STANDOFF
VOLTAGE
(NOTE 1)
V
WM
MICROSEMI
Volts
PART NUMBER
1N6366
MPT-10C
10.0
1N6367
MPT-12C
12.0
1N6368
MPT-15C
15.0
1N6369
MPT-18C
18.0
1N6370
MPT-22C
22.0
1N6371
MPT-36C
36.0
1N6372
MPT-45C
45.0
“C” suffix indicates bidirectional
MAXIMUM
REVERSE
LEAKAGE
@V
WM
I
D
µA
2
2
2
2
2
2
2
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V
(BR)
(min)
Volts
11.7
14.1
17.6
21.2
25.9
42.4
52.9
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
I
PP1
= 1A
V
C
Volts
14.1
16.7
20.8
24.8
30.8
50.6
63.3
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ I
PP2
= 10A
V
C
Volts
14.5
17.1
21.4
25.5
32.0
54.3
70.0
MAXIMUM
PEAK PULSE
CURRENT
I
PP3
A
90
70
60
50
40
23
19
NOTE 1:
TVS devices are normally selected according to the reverse “standoff voltage” (V
WM
) which should be equal to or greater than the DC or
continuous peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
T4-LDS-0292, Rev. 1 (121800)
©2013 Microsemi Corporation
Page 3 of 7
1N6358 – 1N6372 or
MPT-10 – MPT-45C
GRAPHS
P
pp
- Peak Pulse Power - kW
t
p
– Pulse Time
FIGURE 1
Peak Pulse Power vs Pulse Time
V
c
– Clamping Voltage - Volts
I
PP
– Peak Pulse Current – Amps
FIGURE 2
Typical Characteristic Clamping Voltage vs. Peak Pulse Current
T4-LDS-0292, Rev. 1 (121800)
©2013 Microsemi Corporation
Page 4 of 7
1N6358 – 1N6372 or
MPT-10 – MPT-45C
GRAPHS
Pulse Current (I
P
) in Percent of I
PP
Time (t) in milliseconds
FIGURE 3
Pulse Wave Form for Exponential Surge
C – Capacitance – picoFarads
V
(BR)
– Breakdown Voltage – Volts
FIGURE 4
Typical Capacitance vs. Breakdown Voltage (Unidirectional Types)
T4-LDS-0292, Rev. 1 (121800)
©2013 Microsemi Corporation
Page 5 of 7
