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MR25H40CDCR

Memory Circuit, 512KX8, CMOS, PDSO8, DFN-8

器件类别:存储    存储   

厂商名称:Everspin Technologies

器件标准:

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器件:MR25H40CDCR

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Everspin Technologies
零件包装代码
SON
包装说明
SON, SOLCC8,.25
针数
8
Reach Compliance Code
compliant
ECCN代码
EAR99
JESD-30 代码
R-PDSO-N8
长度
6 mm
内存密度
4194304 bit
内存集成电路类型
MEMORY CIRCUIT
内存宽度
8
混合内存类型
N/A
功能数量
1
端子数量
8
字数
524288 words
字数代码
512000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
512KX8
封装主体材料
PLASTIC/EPOXY
封装代码
SON
封装等效代码
SOLCC8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
座面最大高度
1.05 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
NO LEAD
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
5 mm
文档预览
MR20H40 / MR25H40
MR20H40 -
50MHz/20ns
t
SCK (Industrial Temp Range) 4Mb SPI Interface MRAM
MR25H40 -
40MHz/25ns
t
SCK (Industrial, Extended and AEC-Q100 Grade 1 Temp Range) 4Mb SPI Interface MRAM
For more information on product options, see
“Table 16 – Ordering Part Numbers” on page 25.
FEATURES
• 
No write delays
• 
Unlimited write endurance
• 
Data retention greater than 20 years
• 
Automatic data protection on power loss
• 
Fast, simple SPI interface, up to 50 MHz clock rate with MR20H40.
• 
3.0 to 3.6 Volt power supply range
• 
Low-current sleep mode
• 
Industrial (-40 to 85°C), Extended (-40 to 105°C), and AEC-Q100
Grade 1 (-40 to 125°C) temperature range options.
• 
Available in 8-pin DFN or 8-pin DFN Small Flag, RoHS-compliant
packages.
• 
Direct replacement for serial EEPROM, Flash, and FeRAM
• 
MSL Level 3
8-DFN Small Flag
8-DFN
RoHS
DESCRIPTION
MR2xH40 is a family of 4,194,304-bit magnetoresistive random access memory (MRAM) devices
organized as 524,288 words of 8 bits. They are the ideal memory solution for applications that must
store and retrieve data and programs quickly using a small number of I/O pins. They have serial EE-
PROM and serial Flash compatible read/write timing with no write delays and unlimited read/write
endurance. Unlike other serial memories, with the MR2xH40 family both reads and writes can occur
randomly in memory with no delay between writes.
The MR2xH40 family provides highly reliable data storage over a wide range of temperatures. The
MR20H40 (50MHz) is offered with Industrial (-40° to +85 °C) range. The MR25H40 (40MHz) is offered
with Industrial (-40° to +85 °C), Extended (-40 to 105°C), and AEC-Q100 Grade 1 (-40°C to +125 °C)
operating temperature range options.
Both are available in a 5 x 6mm, 8-pin DFN package. The pinout is compatible with serial SRAM,
EEPROM, Flash, and FeRAM products.
Copyright © Everspin Technologies 2017
1
MR20H40 / MR25H40 Revision 12.3, 2/2017
MR20H40 / MR25H40
TABLE OF CONTENTS
OVERVIEW ............................................................................................................................................5
Figure 1 – Block Diagram ........................................................................................................................................... 5
System Configuration .....................................................................................................................5
Figure 2 – System Configuration............................................................................................................................. 5
Pin Functions ...................................................................................................................................6
Figure 3 – DFN Package Pin Diagram (Top View) .............................................................................................. 6
Table 1 – Pin Functions ............................................................................................................................................... 6
SPI COMMUNICATIONS PROTOCOL ...................................................................................................7
Command Codes..............................................................................................................................7
Table 2 – Command Codes ....................................................................................................................................... 7
Status Register, Memory Protection and Block Write Protection ................................................8
Table 3 – Status Register Bit Assignments ........................................................................................................... 8
Memory Protection Modes .............................................................................................................8
Table 4 – Memory Protection Modes .................................................................................................................... 8
Block Protection Modes ..................................................................................................................9
Table 5 – Block Memory Write Protection............................................................................................................ 9
Read Status Register (RDSR) ........................................................................................................ 10
Figure 4 – Read Status Register (RDSR) Timing ................................................................................................10
Write Enable (WREN) .................................................................................................................... 10
Figure 5 – Write Enable (WREN) Timing ..............................................................................................................10
Write Disable (WRDI) .................................................................................................................... 11
Figure 6 – Write Disable (WRDI) Timing ..............................................................................................................11
Write Status Register (WRSR) ...................................................................................................... 11
Figure 7 – Write Status Register (WRSR) Timing ..............................................................................................11
Read Data Bytes (READ) ............................................................................................................... 12
Figure 8 – Read Data Bytes (READ) Timing ........................................................................................................12
Copyright © Everspin Technologies 2017
2
MR20H40 / MR25H40 Revision 12.3, 2/2017
MR20H40 / MR25H40
Table of Contents (Cont’d)
Write Data Bytes (WRITE) ............................................................................................................. 12
Figure 9 – Write Data Bytes (WRITE) Timing ......................................................................................................13
Enter Sleep Mode (SLEEP) ............................................................................................................ 13
Figure 10 – Enter Sleep Mode (SLEEP) Timing..................................................................................................13
Exit Sleep Mode (WAKE)............................................................................................................... 14
Figure 11 – Exit Sleep Mode (WAKE) Timing .....................................................................................................14
ELECTRICAL SPECIFICATIONS ......................................................................................................... 15
Absolute Maximum Ratings ........................................................................................................ 15
Table 6 – Absolute Maximum Ratings ..............................................................................................................15
Table 7 – Operating Conditions.............................................................................................................................16
Table 8 – DC Characteristics....................................................................................................................................16
Table 9 – Power Supply Characteristics ..............................................................................................................17
TIMING SPECIFICATIONS ................................................................................................................. 18
Capacitance................................................................................................................................... 18
Table 10 – Capacitance .............................................................................................................................................18
AC Measurement Conditions ....................................................................................................... 18
Table 11 – AC Measurement Conditions ............................................................................................................18
Figure 12 – Output Load for Impedance Parameter Measurements .......................................................18
Figure 13 – Output Load for all Other Parameter Measurements.............................................................18
Power Up Timing .......................................................................................................................... 19
Table 12 – Power-Up Timing ...................................................................................................................................19
Figure 14 – Power-Up Timing ................................................................................................................................19
AC Timing Parameters .................................................................................................................. 20
Table 13 – MR20H40 (
f
SCK = 50MHz) AC Timing Parameters .....................................................................20
Table 14 – MR25H40 (
f
SCK = 40MHz) AC Timing Parameters .....................................................................21
Copyright © Everspin Technologies 2017
3
MR20H40 / MR25H40 Revision 12.3, 2/2017
MR20H40 / MR25H40
Table of Contents (Cont’d)
Figure 15 – Synchronous Data Timing ................................................................................................................23
Figure 16 – HOLD Timing ........................................................................................................................................23
PART NUMBERS AND ORDERING .................................................................................................... 24
Table 15 – Part Numbering System ......................................................................................................................24
Table 16 – Ordering Part Numbers .......................................................................................................................25
PACKAGE OUTLINE DRAWINGS ....................................................................................................... 26
Figure 17 – DFN Package Outline ........................................................................................................................26
Figure 18 – DFN Small Flag Package....................................................................................................................27
REVISION HISTORY ........................................................................................................................... 28
HOW TO REACH US ........................................................................................................................... 29
Copyright © Everspin Technologies 2017
4
MR20H40 / MR25H40 Revision 12.3, 2/2017
MR20H40 / MR25H40
OVERVIEW
The MR2xH40 family is an SPI interface MRAM family with a memory array logically organized as 512Kx8
using the four pin interface of chip select (CS), serial input (SI), serial output (SO) and serial clock (SCK) of the
serial peripheral interface (SPI) bus. The MRAM implements a subset of commands common to SPI EEPROM
and SPI Flash components. This allows the SPI MRAM to replace these components in the same socket
and interoperate on a shared SPI bus. The SPI MRAM offers superior write speed, unlimited endurance, low
standby & operating power, and simple, reliable data retention compared to other serial memory alterna-
tives.
Figure 1 – Block Diagram
WP
CS
HOLD
SCK
Instruction Decode
Clock Generator
Control Logic
Write Protect
512Kb x 8
MRAM ARRAY
Instruction Register
Address Register
Counter
SI
19
8
SO
Data I/O Register
4
Nonvolatile Status
Register
System Configuration
Single or multiple devices can be connected to the bus as shown in Figure 2. Pins SCK, SO and SI are com-
mon among devices. Each device requires CS and HOLD pins to be driven separately.
Figure 2 – System Configuration
SCK
MOSI
MISO
SO
SPI
Micro Controller
SI
SCK
SO
SI
SCK
EVERSPIN SPI MRAM 1
EVERSPIN SPI MRAM 2
CS
CS
1
HOLD
1
CS
2
HOLD
2
HOLD
CS
HOLD
MOSI = Master Out Slave In
MISO = Master In Slave Out
Copyright © Everspin Technologies 2017
5
MR20H40 / MR25H40 Revision 12.3, 2/2017
查看更多>
参数对比
与MR25H40CDCR相近的元器件有:MR25H40CDC、MR25H40CDF、MR25H40MDF、MR20H40CDFR、MR20H40DF、MR20H40DFR。描述及对比如下:
型号 MR25H40CDCR MR25H40CDC MR25H40CDF MR25H40MDF MR20H40CDFR MR20H40DF MR20H40DFR
描述 Memory Circuit, 512KX8, CMOS, PDSO8, DFN-8 Memory Circuit, 512KX8, CMOS, PDSO8, DFN-8 Memory Circuit, 512KX8, CMOS, PDSO8, DFN-8 Memory Circuit, 512KX8, CMOS, PDSO8, DFN-8 Memory Circuit, 512KX8, CMOS, PDSO8, DFN-8 Memory Circuit, 512KX8, CMOS, PDSO8, 5 X 6 MM, ROHS COMPLIANT, MO-229, DFN-8 Memory Circuit, 512KX8, CMOS, PDSO8, 5 X 6 MM, ROHS COMPLIANT, MO-229, DFN-8
厂商名称 Everspin Technologies Everspin Technologies Everspin Technologies Everspin Technologies Everspin Technologies Everspin Technologies Everspin Technologies
零件包装代码 SON SON SON SON SON SON SON
包装说明 SON, SOLCC8,.25 SON, SOLCC8,.25 DFN-8 DFN-8 DFN-8 HVSON, HVSON,
针数 8 8 8 8 8 8 8
Reach Compliance Code compliant compliant compliant compliant compliant unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-30 代码 R-PDSO-N8 R-PDSO-N8 R-PDSO-N8 R-PDSO-N8 R-PDSO-N8 R-PDSO-N8 R-PDSO-N8
长度 6 mm 6 mm 6 mm 6 mm 6 mm 6 mm 6 mm
内存密度 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1
端子数量 8 8 8 8 8 8 8
字数 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
字数代码 512000 512000 512000 512000 512000 512000 512000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 125 °C 85 °C 70 °C 70 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C - -
组织 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SON SON HVSON HVSON HVSON HVSON HVSON
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
座面最大高度 1.05 mm 1.05 mm 0.9 mm 0.9 mm 0.9 mm 0.9 mm 0.9 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL AUTOMOTIVE INDUSTRIAL COMMERCIAL COMMERCIAL
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
宽度 5 mm 5 mm 5 mm 5 mm 5 mm 5 mm 5 mm
是否Rohs认证 符合 符合 符合 符合 符合 符合 -
混合内存类型 N/A N/A N/A N/A N/A - -
封装等效代码 SOLCC8,.25 SOLCC8,.25 SOLCC8,.25 SOLCC8,.25 SOLCC8,.25 - -
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED 260 260 260 260 -
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V - -
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - -
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED 40 40 40 40 -
湿度敏感等级 - - 3 3 3 3 -
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