Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
FEDR27V852E-02-01
1
Semiconductor
MR27V852E
GENERAL DESCRIPTION
This version:
Jan. 2001
524,288–Word
×
16–Bit or 1,048,576–Word
×
8–Bit
8–Word x 16-Bit or 16–Word x 8-Bit Page Mode Production Programmed Read Only Memory (P2ROM)
The MR27V852E is a 8 Mbit Production Programmed Read Only Memory (P2ROM) with page mode. Its
configuration can be electrically switched between 524,288-word
×
16-bit and 1,048,576-word
×
8-bit by the state
of the
BYTE
pin. The MR27V852E supports high speed asynchronous read operation using a single 3.3V power
supply.
FEATURES
· 524,288-word
×
16-bit / 1,048,576-word
×
8-bit electrically switchable configuration
· Page size of 8-word x 16-Bit or 16-word x 8-Bit
· +3.3 V power supply
· Access time
Random access mode 100 ns MAX
Page access mode
30 ns MAX
· Operating current
80 mA MAX
· Standby current
50
µA
MAX
· Input/Output TTL compatible
· Tri-state output
· Packages:
42-pin plastic DIP (DIP42-P-600-2.54)
(Product Name : MR27V852E-xxxRA)
42-pin plastic SOJ (SOJ42-P-400-1.27)
(Product Name : MR27V852E-xxxJA)
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FEDR27V852E-02-01
1
Semiconductor
MR27V852E
PIN CONFIGURATION (TOP VIEW)
A18
1
A17
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
CE
11
V
SS
12
OE
13
D0
14
D8
15
D1
16
D9
17
D2
18
D10
19
D3
20
D11
21
42
NC
41
A8
40
A9
39
A10
38
A11
37
A12
36
A13
35
A14
34
A15
33
A16
32
BYTE
31
V
SS
30
D15/A–1
29
D7
28
D14
27
D6
26
D13
25
D5
24
D12
23
D4
22
V
CC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
42
NC
41
A8
40
A9
39
A10
38
A11
37
A12
36
A13
35
A14
34
A15
33
A16
32
BYTE
31
V
SS
30
D15/A–1
29
D7
28
D14
27
D6
26
D13
25
D5
24
D12
23
D4
22
V
CC
A0
10
CE
11
V
SS
12
OE
13
D0
14
D8
15
D1
16
D9
17
D2
18
D10
19
D3
20
D11
21
42-pin DIP
42-pin SOJ
Pin name
D15/A–1
A0 to A18
D0 to D14
CE
OE
BYTE
V
CC
V
SS
NC
Address input
Data output
Chip enable
Output enable
Mode switch
Functions
Data output/Address input
Power supply voltage
GND
Non connection
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FEDR27V852E-02-01
1
Semiconductor
MR27V852E
BLOCK DIAGRAM
A–1
× 8/× 16 Switch
CE
CE
OE
OE
BYTE
Column Decoder
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
Row Decoder
Memory Cell Matrix
524,288 × 16-Bit or 1,048,576× 8-Bit
Address Buffer
Multiplexer
Output Buffer
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D12
D14
D15
D11
D13
In 8-bit output mode, these pins
are placed in a high-Z state and pin
D15 functions as the A-1 address
pin.
FUNCTION TABLE
Mode
Read (16-Bit)
Read (8-Bit)
Output disable
Standby
CE
L
L
L
H
OE
L
L
H
∗
BYTE
H
L
H
L
H
L
3.3 V
D
OUT
V
CC
D0 to D7
D8 to D14
D
OUT
Hi–Z
Hi–Z
Hi–Z
L/H
∗
∗
D15/A–1
∗:
Don’t Care (H or L)
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FEDR27V852E-02-01
1
Semiconductor
MR27V852E
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating temperature under bias
Storage temperature
Input voltage
Output voltage
Power supply voltage
Power dissipation per package
Symbol
Ta
Tstg
V
I
V
O
V
CC
P
D
—
relative to V
SS
Condition
—
Value
0 to 70
–55 to 125
–0.5 to V
CC
+0.5
–0.5 to V
CC
+0.5
–0.5 to 5
1.0
Unit
°C
°C
V
V
V
W
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
V
CC
power supply voltage
Input “H” level
Input “L” level
Symbol
V
CC
V
IH
V
IL
V
CC
= 3.0 to 3.6 V
Condition
Min.
3.0
2.2
–0.5∗∗
Typ.
—
—
—
Max.
3.6
V
CC
+0.5∗
0.6
Unit
V
V
V
Voltage is relative to V
SS
.
∗
: Vcc+1.5 V(Max.) when pulse width of overshoot is less than 10 ns.
∗∗
: -1.5 V(Min.) when pulse width of undershoot is less than 10 ns.
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测试/测量