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MR2A08AMA35R

Memory Circuit, 512KX8, CMOS, PBGA48, 8 X 8 MM, ROHS COMPLIANT, FBGA-48

器件类别：存储    存储   

厂商名称：Everspin Technologies

器件标准：

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器件参数
参数名称
属性值
是否Rohs认证
符合
零件包装代码
BGA
包装说明
LFBGA,
针数
48
Reach Compliance Code
compliant
ECCN代码
EAR99
JESD-30 代码
S-PBGA-B48
长度
8 mm
内存密度
4194304 bit
内存集成电路类型
MEMORY CIRCUIT
内存宽度
8
功能数量
1
端子数量
48
字数
524288 words
字数代码
512000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
512KX8
封装主体材料
PLASTIC/EPOXY
封装代码
LFBGA
封装形状
SQUARE
封装形式
GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）
260
座面最大高度
1.35 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
BALL
端子节距
0.75 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
40
宽度
8 mm
Base Number Matches
1
文档预览
MR2A08A
FEATURES
• Fast 35ns Read/Write Cycle
• SRAM Compatible Timing, Uses Existing SRAM Controllers Without
Redesign
• Unlimited Read & Write Endurance
• Data Always Non-volatile for >20 years at Temperature
• One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
System for Simpler, More Efficient Design
• Replace battery-backed SRAM solutions with MRAM to eliminate
battery assembly, improving reliability
• 3.3 Volt Power Supply
• Automatic Data Protection on Power Loss
• Commercial, Industrial, Automotive Temperatures
•
RoHS-Compliant SRAM TSOP2 Package
•
RoHS-Compliant SRAM BGA Package
• AEC-Q100 Grade 1 Qualified
512K x 8 MRAM Memory
RoHS
INTRODUCTION
The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as
524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited
endurance. Data is always non-volatile for greater than 20 years. Data is automatically protected on power
loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR2A08A is the ideal memory solution for applications that must permanently store and retrieve criti-
cal data and programs quickly.
The MR2A08A is available in a small footprint 400-mil, 44-lead plastic small-outline TSOP type 2 package
or an 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are
compatible with similar low-power SRAM products and other non-volatile RAM products.
The MR2A08A provides highly reliable data storage over a wide range of temperatures. The product is of-
fered with commercial temperature range (0 to +70 °C), industrial temperature range (-40 to +85 °C), and
AEC-Q100 Grade 1 temperature range (-40 to +125 °C) options.
CONTENTS
1. DEVICE PIN ASSIGNMENT......................................................................... 2
2. ELECTRICAL SPECIFICATIONS................................................................. 4
3. TIMING SPECIFICATIONS.......................................................................... 7
4. ORDERING INFORMATION....................................................................... 11
5. MECHANICAL DRAWING.......................................................................... 12
6. REVISION HISTORY...................................................................................... 14
How to Reach Us.......................................................................................... 14
Copyright © 2015 Everspin Technologies, Inc.
1
MR2A08A Rev. 6.2, 6/2015
MR2A08A
1. DEVICE PIN ASSIGNMENT
Figure 1.1 Block Diagram
G
OUTPUT
ENABLE
BUFFER
9
10
ROW
DECODER
COLUMN
DECODER
OUTPUT ENABLE
A[18:0]
19
ADDRESS
BUFFER
E
CHIP
ENABLE
BUFFER
8
512k x 8
BIT
MEMORY
ARRAY
8
SENSE
AMPS
8
OUTPUT
BUFFER
8
W
WRITE
ENABLE
BUFFER
FINAL
WRITE
DRIVERS
8
WRITE
DRIVER
8
DQ[7:0]
WRITE ENABLE
Table 1.1 Pin Functions
Signal Name
A
E
W
G
DQ
V
DD
V
SS
DC
NC
Function
Address Input
Chip Enable
Write Enable
Output Enable
Data I/O
Power Supply
Ground
Do Not Connect
No Connection - Pin 2, 43 (TSOPII); Ball H6, G2 (BGA) Reserved For Future Expansion
Copyright © 2015 Everspin Technologies, Inc.
2
MR2A08A Rev. 6.2, 6/2015
DEVICE PIN ASSIGNMENT
MR2A08A
Figure 1.2 Pin Diagrams for Available Packages (Top View)
DC
NC
A
A
A
A
A
E
DQ
DQ
V
DD
V
SS
DQ
DQ
W
A
A
A
A
A
DC
DC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
DC
NC
DC
A
A
A
A
G
DQ
DQ
V
SS
V
DD
DQ
DQ
DC
A
A
A
A
A
DC
DC
1
DC
NC
DQ
2
G
DC
NC
DQ
DQ
3
A
A
A
A
DC
A
A
A
4
A
A
A
A
A
A
A
A
5
A
E
NC
DQ
DQ
6
DC
DC
DQ
A
B
C
D
E
F
G
H
V
SS
V
DD
DQ
V
DD
V
SS
DQ
NC
NC
A
NC
W
A
NC
A
NC
NC
44 Pin TSOP2
48 Pin FBGA
Table 1.2 Operating Modes
E
1
H
L
L
L
1
2
G
1
X
H
L
X
W
1
X
H
H
L
Mode
Not selected
Output disabled
Byte Read
Byte Write
V
DD
Current
I
SB1
, I
SB2
I
DDR
I
DDR
I
DDW
DQ[7:0]
2
Hi-Z
Hi-Z
D
Out
D
in
H = high, L = low, X = don’t care
Hi-Z = high impedance
Copyright © 2015 Everspin Technologies, Inc.
3
MR2A08A Rev. 6.2, 6/2015
MR2A08A
2. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or electric fields; however, it is advised that
normal precautions be taken to avoid application of any voltage greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to avoid application of any magnetic field
more intense than the maximum field intensity specified in the maximum ratings.
Table 2.1 Absolute Maximum Ratings
1
Symbol
V
DD
V
IN
I
OUT
P
D
Parameter
Supply voltage
2
Voltage on any pin
2
Output current per pin
Package power dissipation
3
Temp Range
-
-
-
-
Commercial
Package
-
-
Value
-0.5 to 4.0
-0.5 to V
DD
+ 0.5
±20
0.600
-10 to 85
-45 to 95
-45 to 130
-55 to 150
260
2,000
2,000
10,000
2,000
8,000
8,000
10,000
8,000
Unit
V
V
mA
W
-
Note 3
-
-
-
-
-
TSOP2, BGA
BGA
TSOP2
TSOP2
TSOP2, BGA
BGA
TSOP2
TSOP2
T
BIAS
Temperature under bias
Industrial
AEC-Q100 Grade 1
°C
T
stg
T
Lead
Storage Temperature
Lead temperature during solder
(3 minute max)
-
-
Commercial
°C
°C
H
max_write
Maximum magnetic field during
write
Industrial
AEC-Q100 Grade 1
Commercial
A/m
H
max_read
Maximum magnetic field during
read or standby
Industrial
AEC-Q100 Grade 1
A/m
Notes:
1.
2.
3.
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation should be restricted
to recommended operating conditions. Exposure to excessive voltages or magnetic fields could affect device reliability.
All voltages are referenced to V
SS
.
Power dissipation capability depends on package characteristics and use environment.
Copyright © 2015 Everspin Technologies, Inc.
4
MR2A08A Rev. 6.2, 6/2015
Electrical Specifications
Table 2.2 Operating Conditions
Parameter
Power supply voltage
1
Write inhibit voltage
Input high voltage
Input low voltage
Temperature under bias
MR2A08A (Commercial)
MR2A08AC (Industrial)
MR2A08AM (AEC-Q100 Grade 1)
4
1
2
MR2A08A
Symbol
V
DD
V
WI
V
IH
V
IL
Min
3.0
2.5
2.2
-0.5
3
0
-40
-40
Typical
3.3
2.7
-
-
Max
3.6
3.0
1
V
DD
+ 0.3
2
0.8
70
85
125
Unit
V
V
V
V
T
A
°C
There is a 2 ms startup time once V
DD
exceeds V
DD,
(min). See Power
Up and Power Down Sequencing
below.
V
IH
(max) = V
DD
+ 0.3 V
DC
; V
IH
(max) = V
DD
+ 2.0 V
AC
(pulse width ≤ 10 ns) for I ≤ 20.0 mA.
3
V
IL
(min) = -0.5 V
DC
; V
IL
(min) = -2.0 V
AC
(pulse width ≤ 10 ns) for I ≤ 20.0 mA.
4
AEC-Q100 Grade 1 temperature profile assumes 10% duty cycle at maximum temperature (2-years out of 20-year life)
Power Up and Power Down Sequencing
The MRAM is protected from write operations whenever V
DD
is less than V
WI
. As soon as V
DD
exceeds V
DD
(min), there is a
startup time of 2 ms before read or write operations can start. This time allows memory power supplies to stabilize.
The
E
and
W
control signals should track V
DD
on power up to V
DD
- 0.2 V or V
IH
(whichever is lower) and remain high
for the startup time. In most systems, this means that these signals should be pulled up with a resistor so that signal
remains high if the driving signal is Hi-Z during power up. Any logic that drives
E
and
W
should hold the signals high
with a power-on reset signal for longer than the startup time.
During power loss or brownout where V
DD
goes below V
WI
, writes are protected and a startup time must be observed
when power returns above V
DD
(min).
Figure 2.1 Power Up and Power Down Diagram
V
WI
V
DD
BROWNOUT or POWER LOSS
2 ms
STARTUP
2 ms
RECOVER
NORMAL
OPERATION
READ/WRITE
INHIBITED
NORMAL
OPERATION
READ/WRITE
INHIBITED
V
IH
V
IH
E
W
Copyright © 2015 Everspin Technologies, Inc.
5
MR2A08A Rev. 6.2, 6/2015
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参数对比
与MR2A08AMA35R相近的元器件有：MR2A08AYS35、MR2A08ACMA35、MR2A08AMA35、MR2A08AMYS35R、MR2A08AMYS35、MR2A08ACYS35R、MR2A08ACMA35R。描述及对比如下：
型号 MR2A08AMA35R MR2A08AYS35 MR2A08ACMA35 MR2A08AMA35 MR2A08AMYS35R MR2A08AMYS35 MR2A08ACYS35R MR2A08ACMA35R
描述 Memory Circuit, 512KX8, CMOS, PBGA48, 8 X 8 MM, ROHS COMPLIANT, FBGA-48 Memory Circuit, 512KX8, CMOS, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44 Memory Circuit, 256KX8, CMOS, PBGA48, 8 X 8 MM, ROHS COMPLIANT, FBGA-48 Memory Circuit, 256KX8, CMOS, PBGA48, 8 X 8 MM, ROHS COMPLIANT, FBGA-48 Memory Circuit, 256KX8, CMOS, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44 Memory Circuit, 256KX8, CMOS, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44 Memory Circuit, 256KX8, CMOS, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44 Memory Circuit, 512KX8, CMOS, PBGA48, 8 X 8 MM, ROHS COMPLIANT, FBGA-48
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
零件包装代码 BGA TSOP2 BGA BGA TSOP2 TSOP2 TSOP2 BGA
包装说明 LFBGA, TSOP2, TSOP44,.46,32 LFBGA, BGA48,6X8,30 LFBGA, BGA48,6X8,30 TSOP2, TSOP44,.46,32 TSOP2, TSOP44,.46,32 TSOP2, TSOP44,.46,32 LFBGA,
针数 48 44 48 48 44 44 44 48
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-30 代码 S-PBGA-B48 R-PDSO-G44 S-PBGA-B48 S-PBGA-B48 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 S-PBGA-B48
长度 8 mm 18.41 mm 8 mm 8 mm 18.41 mm 18.41 mm 18.41 mm 8 mm
内存密度 4194304 bit 4194304 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 4194304 bi
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1
端子数量 48 44 48 48 44 44 44 48
字数 524288 words 524288 words 262144 words 262144 words 262144 words 262144 words 262144 words 524288 words
字数代码 512000 512000 256000 256000 256000 256000 256000 512000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 85 °C 70 °C 125 °C 125 °C 85 °C 85 °C
最低工作温度 - - -40 °C - -40 °C -40 °C -40 °C -40 °C
组织 512KX8 512KX8 256KX8 256KX8 256KX8 256KX8 256KX8 512KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFBGA TSOP2 LFBGA LFBGA TSOP2 TSOP2 TSOP2 LFBGA
封装形状 SQUARE RECTANGULAR SQUARE SQUARE RECTANGULAR RECTANGULAR RECTANGULAR SQUARE
封装形式 GRID ARRAY, LOW PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度） 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 260
座面最大高度 1.35 mm 1.2 mm 1.35 mm 1.35 mm 1.2 mm 1.2 mm 1.2 mm 1.35 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL AUTOMOTIVE AUTOMOTIVE INDUSTRIAL INDUSTRIAL
端子形式 BALL GULL WING BALL BALL GULL WING GULL WING GULL WING BALL
端子节距 0.75 mm 0.8 mm 0.75 mm 0.75 mm 0.8 mm 0.8 mm 0.8 mm 0.75 mm
端子位置 BOTTOM DUAL BOTTOM BOTTOM DUAL DUAL DUAL BOTTOM
处于峰值回流温度下的最长时间 40 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 40
宽度 8 mm 10.16 mm 8 mm 8 mm 10.16 mm 10.16 mm 10.16 mm 8 mm
最长访问时间 - 35 ns 35 ns 35 ns 35 ns 35 ns 35 ns -
混合内存类型 - N/A N/A N/A N/A N/A N/A -
封装等效代码 - TSOP44,.46,32 BGA48,6X8,30 BGA48,6X8,30 TSOP44,.46,32 TSOP44,.46,32 TSOP44,.46,32 -
电源 - 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V -
认证状态 - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
最大待机电流 - 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A -
最大压摆率 - 0.135 mA 0.135 mA 0.135 mA 0.135 mA 0.135 mA 0.135 mA -
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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