MR854,MR854 pdf中文资料,MR854引脚图,MR854电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

厂商名称

JGD（Jinan Gude Electronic Device）

包装说明

O-PALF-W2

Reach Compliance Code

unknown

其他特性

HIGH RELIABILITY

应用

FAST RECOVERY

外壳连接

ISOLATED

配置

SINGLE

二极管元件材料

SILICON

二极管类型

RECTIFIER DIODE

最大正向电压 (VF)

1.25 V

JEDEC-95代码

DO-201AD

JESD-30 代码

O-PALF-W2

最大非重复峰值正向电流

150 A

元件数量

相数

端子数量

最高工作温度

125 °C

最低工作温度

-65 °C

最大输出电流

3 A

封装主体材料

PLASTIC/EPOXY

封装形状

ROUND

封装形式

LONG FORM

最大重复峰值反向电压

400 V

最大反向电流

10 µA

最大反向恢复时间

0.1 µs

表面贴装

端子形式

WIRE

端子位置

AXIAL

文档预览

MR850 - MR858

PRV : 50 - 600 Volts

Io : 3.0 Amperes

FEATURES :

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

Fast switching for high efficiency

FAST RECOVERY

RECTIFIER DIODES

DO-201AD

0.21 (5.33)

0.19 (4.82)

1.00 (25.4)

MIN.

0.375 (9.52)

0.285 (7.24)

MECHANICAL DATA :

* Case : DO-201AD Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 1.16 grams

0.052 (1.32)

0.048 (1.22)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current

0.375"(9.5mm) Lead Length

Ta = 90

°C

Peak Forward Surge Current,

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Peak Forward Voltage at I

= 3.0 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25

°C

Ta = 100

°C

SYMBOL MR850 MR851 MR852 MR854 MR856 MR858

RRM

RMS

F(AV)

100

200

140

200

3.0

400

280

400

600

420

600

800

560

800

UNIT

FSM

R(H)

Trr

100

1.25

150

- 65 to + 150

µA

°C

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Junction Temperature Range

Storage Temperature Range

STG

Notes :

( 1 ) Reverse Recovery Test Conditions : I

= 0.5 A, I

= 1.0 A, Irr = 0.25 A.

( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V

Page 1 of 2

Rev. 01 : April 2, 2002

RATING AND CHARACTERISTIC CURVES ( MR850 - MR858 )

FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

Ω

+ 0.5

D.U.T.

50 Vdc

(approx)

Ω

PULSE

GENERATOR

( NOTE 2 )

OSCILLOSCOPE

( NOTE 1 )

- 0.25

Trr

- 1.0 A

SET TIME BASE FOR 50 ns/cm

NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.

2. Rise time = 10 ns max., Source Impedance = 50 ohms.

3. All Resistors = Non-inductive Types.

FIG.2 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

3.0

100

FIG.3 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

PEAK FORWARD SURGE

CURRENT, AMPERES

8.3 ms SINGLE HALF SINE WAVE

Ta = 50

°C

AVERAGE FORWARD OUTPUT

CURRENT, AMPERES

2.4

1.8

1.2

0.6

60Hz RESISTIVE OR INDUCTIVE LOAD

100

125

150

175

60 100

AMBIENT TEMPERATURE, (

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

REVERSE CURRENT, MICROAMPERES

NUMBER OF CYCLES AT 60Hz

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

100

FORWARD CURRENT, AMPERES

Pulse Width = 300

µs

2% Duty Cycle

= 25

°C

= 100

°C

1.0

0.1

= 25

°C

0.1

0.01

100

120

140

PERCENT OF RATED REVERSE

VOLTAGE, (%)

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

FORWARD VOLTAGE, VOLTS

Page 2 of 2

Rev. 01 : April 2, 2002

参数对比

与MR854相近的元器件有：MR856、MR852、MR851、MR858、MR850。描述及对比如下：

型号	MR854	MR856	MR852	MR851	MR858	MR850
描述	3.0 amps. fast recovery rectifiers	3.0 amps. fast recovery rectifiers	3.0 amps. fast recovery rectifiers	3.0 amps. fast recovery rectifiers	3.0 amps. fast recovery rectifiers	3.0 amps. fast recovery rectifiers
厂商名称	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）
包装说明	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
应用	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.25 V	1.3 V	1.25 V	1.25 V	1.3 V	1.25 V
JEDEC-95代码	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
最大非重复峰值正向电流	150 A	150 A	150 A	150 A	150 A	150 A
元件数量	1	1	1	1	1	1
相数	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	3 A	3 A	3 A	3 A	3 A	3 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	400 V	600 V	200 V	100 V	800 V	50 V
最大反向电流	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
最大反向恢复时间	0.1 µs	0.15 µs	0.1 µs	0.1 µs	0.15 µs	0.1 µs
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL