Freescale Semiconductor
Technical Data
Document Number: MRF19085
Rev. 8, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical 2 - Carrier N - CDMA Performance for V
DD
= 26 Volts,
I
DQ
= 850 mA, P
out
= 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — - 51 dB
IM3 — - 36.5 dBc
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF19085LR3
MRF19085LSR3
1930 - 1990 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 465 - 06, STYLE 1
NI - 780
MRF19085LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF19085LSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
273
1.56
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(1)
0.79
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MRF19085LR3 MRF19085LSR3
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2.5
—
—
—
3.5
0.18
6
4
4.5
0.210
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
3.6
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz)
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
1. Part is internally matched both on input and output.
G
ps
12
13
—
dB
η
21
23
—
%
IMD
—
- 36.5
- 35
dBc
ACPR
—
- 51
- 48
dBc
IRL
—
- 12
-9
dB
(continued)
MRF19085LR3 MRF19085LSR3
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 850 mAdc)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Functional Tests
(In Freescale Test Fixture)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 850 mA, f = 1990 MHz)
G
ps
—
13
—
dB
Symbol
Min
Typ
Max
Unit
η
—
36
—
%
IMD
—
- 31
—
dBc
IRL
—
- 12
—
dB
ARCHIVE INFORMATION
P1dB
—
90
—
W
MRF19085LR3 MRF19085LSR3
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
V
BIAS
R1
R3
B1
+
C5
C4
C3
C2
C7
+
C8
L1
C9
C10
+
C11
+
C12
V
SUPPLY
R2
Z4
RF
INPUT
Z9
RF
OUTPUT
Z1
C1
Z2
Z3
DUT
Z5
Z6
Z7
C6
Z8
ARCHIVE INFORMATION
Figure 1. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Schematic
Table 5. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Designations and Values
Part
B1
C1
C2, C7
C3, C9
C4, C10
C5
C6
C8
C11, C12
L1
N1, N2
R1
R2
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Board
PCB
Description
Short Ferrite Bead
51 pF Chip Capacitor
5.1 pF Chip Capacitors
1000 pF Chip Capacitors
0.1
μF
Chip Capacitors
0.1
μF
Tantalum Surface Mount Capacitor
10 pF Chip Capacitor
10
μF
Tantalum Surface Mount Capacitor
22
μF
Tantalum Surface Mount Capacitors
1 Turn, 20 AWG, 0.100″ ID
Type N Flange Mounts
1.0 kΩ, 1/8 W Chip Resistor
220 kΩ, 1/8 W Chip Resistor
10
Ω,
1/8 W Chip Resistor
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
0.030″ Glass
Teflon
®
Etched Circuit Boards
0.750″ x 0.0840″
1.090″ x 0.0840″
0.400″ x 1.400″
0.520″ x 0.050″
0.540″ x 1.133″
0.400″ x 0.140″
0.555″ x 0.0840″
0.720″ x 0.0840″
0.560″ x 0.070″
GX-0300-55-22,
ε
r
= 2.55
MRF19085 Rev. 4
Keene
CMR
3052-1648-10
Omni Spectra
Part Number
2743019447
100B510JCA500X
100B5R1JCA500X
100B102JCA500X
CDR33BX104AKWS
T491C105M050
100B100JCA500X
T495X106K035AS4394
T491X226K035AS4394
ATC
ATC
ATC
Kemet
Kemet
ATC
Kemet
Kemet
Manufacturer
Fair Rite
MRF19085LR3 MRF19085LSR3
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
C8
C2
R1
B1
C7
L1
C9
R2
CUT OUT AREA
C5
C4
C3
C11 C12
C6
R3
C10
C1
ARCHIVE INFORMATION
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition
period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Layout
MRF19085LR3 MRF19085LSR3
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
MRF19085
Rev.4
PCB设计
