Freescale Semiconductor
Technical Data
Document Number: MRF6V14300H
Rev. 3, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulsed applications.
•
Typical Pulsed Performance: V
DD
= 50 Volts, I
DQ
= 150 mA, P
out
=
330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300
μ
sec,
Duty Cycle = 12%
Power Gain — 18 dB
Drain Efficiency — 60.5%
•
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak
Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 50 V
DD
Operation
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6V14300HR3
MRF6V14300HSR3
1400 MHz, 330 W, 50 V
PULSED
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465-
-06, STYLE 1
NI-
-780
MRF6V14300HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF6V14300HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +100
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 65°C, 330 W Pulsed, 300
μsec
Pulse Width, 12% Duty Cycle
Symbol
Z
θJC
Value
(2,3)
0.13
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
MRF6V14300HR3 MRF6V14300HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 90 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 662
μAdc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 150 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.63 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.6
350
330
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
0.9
1.5
—
1.6
2.4
0.26
2.4
3
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
100
—
—
—
—
—
—
10
—
50
2.5
μAdc
Vdc
μAdc
mA
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 330 W Peak (39.6 W Avg.), f = 1400 MHz,
Pulsed, 300
μsec
Pulse Width, 12% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
16.5
59
(2)
—
18
60.5
(2)
--12
19.5
—
--9
dB
%
dB
Pulsed RF Performance
(In Freescale Application Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 330 W Peak
(39.6 W Avg.), f1 = 1200 MHz, f2 = 1300 MHz and f3 = 1400 MHz, Pulsed, 300
μsec
Pulse Width, 12% Duty Cycle, t
r
= 50 ns
Relative Insertion Phase
Gain Flatness
Pulse Amplitude Droop
Harmonic 2nd and 3rd
Spurious Response
Load Mismatch Stability
(VSWR = 3:1 at all Phase Angles)
Load Mismatch Tolerance
(VSWR = 5:1 at all Phase Angles)
VSWR--S
VSWR--T
|∆Φ|
G
F
D
rp
H2 & H3
—
—
—
—
—
10
0.5
0.3
--20
--65
—
—
—
—
—
°
dB
dB
dBc
dBc
All Spurs Below --60 dBc
No Degradation in Output Power
1. Part internally matched both on input and output.
2. Drain efficiency is calculated by:
η
=
100
×
P
out
where: I
peak
= (I
AVG
-- I
DQ
) / Duty Cycle (%) + I
DQ
.
D
V
DD
×
I
peak
MRF6V14300HR3 MRF6V14300HSR3
2
RF Device Data
Freescale Semiconductor
+
C3
V
BIAS
R1
+
C9
RF
INPUT
C8
Z22
Z13
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10 Z11
Z12
DUT
Z14 Z15 Z16 Z17
C4
Z23
C5
C6
+
C7
V
SUPPLY
Z18
Z19 Z20
C2
Z21
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
0.205″ x 0.080″ Microstrip
0.721″ x 0.022″ Microstrip
0.080″ x 0.104″ Microstrip
0.128″ x 0.022″ Microstrip
0.062″ x 0.134″ Microstrip
0.440″ x 0.022″ Microstrip
0.262″ x 0.496″ Microstrip
0.030″ x 0.138″ Microstrip
0.256″ x 0.028″ Microstrip
0.058″ x 0.254″ Microstrip
0.344″ x 0.087″ Microstrip
0.110″ x 0.087″ Microstrip
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
PCB
0.110″ x 0.866″ Microstrip
0.630″ x 0.866″ Microstrip
0.307″ x 0.470″ Microstrip
0.045″ x 0.221″ Microstrip
0.171″ x 0.136″ Microstrip
0.120″ x 0.430″ Microstrip
0.964″ x 0.136″ Microstrip
0.177″ x 0.078″ Microstrip
0.215″ x 0.078″ Microstrip
1.577″ x 0.070″ Microstrip
1.459″ x 0.070″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6V14300HR3(HSR3) Test Circuit Schematic
Table 5. MRF6V14300HR3(HSR3) Test Circuit Component Designations and Values
Part
C1
C2
C3
C4
C5
C6
C7
C8
C9
R1
Description
43 pF Chip Capacitor
18 pF Chip Capacitor
33 pF Chip Capacitor
27 pF Chip Capacitor
2.2
μF,
100 V Chip Capacitor
470
μF,
63 V Electrolytic Capacitor
330 pF, 63 V Electrolytic Capacitor
0.1
μF,
35 V Chip Capacitor
10
μF,
35 V Tantalum Capacitor
10
Ω,
1/4 W Chip Resistor
Part Number
ATC100B430JT500XT
ATC100B180JT500XT
ATC100B330JT500XT
ATC100B270JT500XT
2225X7R225KT3AB
EMVY630GTR471MMH0S
EMVY630GTR331MMH0S
CDR33BX104AKYS
T491D106K035AT
CRCW120610R0FKEA
Manufacturer
ATC
ATC
ATC
ATC
ATC
Multicomp
Multicomp
Kemet
Kemet
Vishay
MRF6V14300HR3 MRF6V14300HSR3
RF Device Data
Freescale Semiconductor
3
C9
C4
R1
C3
C5
C6
C8
C7
C1
CUT OUT AREA
C2
MRF6V14300
Rev. 1
Figure 2. MRF6V14300HR3(HSR3) Test Circuit Component Layout
MRF6V14300HR3 MRF6V14300HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000
C
oss
MAXIMUM OPERATING T
case
(°C)
C
iss
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
0
2
4
6
8
10
12
14
16
18
20
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
DUTY CYCLE (%)
V
DD
= 50 Vdc, I
DQ
= 150 mA
f = 1200 MHz, Pulse Width = 300
μsec
P
out
= 330 W
P
out
= 270 W
P
out
= 300 W
C, CAPACITANCE (pF)
100
10
C
rss
1
0.1
Figure 3. Capacitance versus Drain-
-Source Voltage
24
65
59
58
57
G
ps
, POWER GAIN (dB)
55
G
ps
20
η
D
18
V
DD
= 50 Vdc, I
DQ
= 150 mA, f = 1400 MHz
Pulse Width = 300
μsec,
Duty Cycle = 12%
16
50
25
100
P
out
, OUTPUT POWER (WATTS) PULSED
400
35
45
P
out
, OUTPUT POWER (dBm)
22
η
D,
DRAIN EFFICIENCY (%)
56
55
54
53
52
51
50
49
48
47
27
Figure 4. Safe Operating Area
Ideal
P3dB = 55.30 dBm (339 W)
P1dB = 54.77 dBm (300 W)
Actual
V
DD
= 50 Vdc, I
DQ
= 150 mA, f = 1400 MHz
Pulse Width = 300
μsec,
Duty Cycle = 12%
29
31
33
35
37
39
P
in
, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
22
21
G
ps
, POWER GAIN (dB)
I
DQ
= 600 mA
G
ps
, POWER GAIN (dB)
22
21
20
19
18
17
16
400
15
50
Figure 6. Pulsed Output Power versus
Input Power
I
DQ
= 150 mA, f = 1400 MHz
Pulse Width = 300
μsec
Duty Cycle = 12%
20 300 mA
150 mA
19
18
17
50
450 mA
V
DD
= 50 Vdc, f = 1400 MHz
Pulse Width = 300
μsec,
Duty Cycle = 12%
100
P
out
, OUTPUT POWER (WATTS) PULSED
35 V
V
DD
= 30 V
100
40 V
45 V 50 V
400
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
Figure 8. Pulsed Power Gain versus
Output Power
MRF6V14300HR3 MRF6V14300HSR3
RF Device Data
Freescale Semiconductor
5
嵌入式系统
