Freescale Semiconductor
Technical Data
Document Number: MRF6VP2600H
Rev. 5.1, 7/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for wideband applications with frequencies up to 500 MHz.
Device is unmatched and is suitable for use in broadcast applications.
•
Typical DVB--T OFDM Performance: V
DD
= 50 Volts, I
DQ
= 2600 mA,
P
out
= 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz,
Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.
Power Gain — 25 dB
Drain Efficiency — 28.5%
ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth
•
Typical Pulsed Performance: V
DD
= 50 Volts, I
DQ
= 2600 mA,
P
out
= 600 Watts Peak, f = 225 MHz, Pulse Width = 100
μsec,
Duty
Cycle = 20%
Power Gain — 25.3 dB
Drain Efficiency — 59%
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak
Power, Pulse Width = 100
μsec,
Duty Cycle = 20%
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
CW Operation Capability with Adequate Cooling
•
Qualified Up to a Maximum of 50 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Push--Pull Operation
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP2600HR6
2-
-500 MHz, 600 W, 50 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D-
-05, STYLE 1
NI-
-1230
PART IS PUSH-
-PULL
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 99°C, 125 W CW, 225 MHz, 50 Vdc, I
DQ
= 2600 mA
Case Temperature 64°C, 610 W CW, 352.2 MHz, 50 Vdc, I
DQ
= 150 mA
Case Temperature 81°C, 610 W CW, 88--108 MHz, 50 Vdc, I
DQ
= 150 mA
Symbol
R
θJC
Value
(2,3)
0.20
0.14
0.16
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6VP2600HR6
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(I
D
= 150 mA, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 800
μAdc)
Gate Quiescent Voltage
(2)
(V
DD
= 50 Vdc, I
D
= 2600 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.7
101
287
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
1.5
—
1.65
2.7
0.25
3
3.5
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
50
2.5
μAdc
Vdc
μAdc
mA
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 2600 mA, P
out
= 125 W Avg., f = 225 MHz, DVB--T
OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @
±4
MHz Offset.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
ACPR
IRL
G
ps
η
D
IRL
24
27
—
—
—
—
—
25
28.5
--61
--18
22
68
--15
27
—
--59
--9
—
—
—
dB
%
dBc
dB
dB
%
dB
Typical Performance — 352.2 MHz
(In Freescale 352.2 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 600 W CW
Typical Performance — 88-
-108 MHz
(In Freescale 88--108 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 600 W
CW
Power Gain
Drain Efficiency
Input Return Loss
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
G
ps
η
D
IRL
—
—
—
24.5
74
--5
—
—
—
dB
%
dB
MRF6VP2600HR6
2
RF Device Data
Freescale Semiconductor
V
BIAS
+
C16
+
C15
+
B1
L3
L2
R1
L4
+
C20
C21
C22
C23
+
V
SUPPLY
+
C14
C13
C12
C11
C9
C8
C7
C10
C6
C19
C17
C18
C24 C25
Z9
Z5
RF
INPUT
Z1
Z2
L1
Z3
Z4
J1
C1
C2
T1
Z1
Z2*
Z3*
Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
1.049″ x 0.080″ Microstrip
0.143″ x 0.080″ Microstrip
0.188″ x 0.080″ Microstrip
0.192″ x 0.133″ Microstrip
0.418″ x 0.193″ Microstrip
0.217″ x 0.518″ Microstrip
0.200″ x 0.518″ Microstrip
0.375″ x 0.214″ Microstrip
Z13, Z14
Z15*, Z16*
Z17, Z18
Z19
Z20
PCB
Z6
Z8
Z7
Z11 Z13
Z15
Z17
RF
OUTPUT
DUT
Z10 Z12 Z14
Z19
C3
Z16
C4
Z18
T2
J2
Z20
C5
0.224″ x 0.253″ Microstrip
0.095″ x 0.253″ Microstrip
0.052″ x 0.253″ Microstrip
0.053″ x 0.080″ Microstrip
1.062″ x 0.080″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
* Line length includes microstrip bends
Figure 2. MRF6VP2600HR6 Test Circuit Schematic
Table 5. MRF6VP2600HR6 Test Circuit Component Designations and Values
Part
B1
C1
C2, C4
C3
C5
C6, C9
C7, C13, C20
C8
C10, C17, C18
C11, C22
C12, C21
C14
C15
C16
C19
C23, C24, C25
J1, J2
L1
L2
L3
L4*
R1
T1
T2
Description
95
Ω,
100 MHz Long Ferrite Bead
47 pF Chip Capacitor
43 pF Chip Capacitors
100 pF Chip Capacitor
10 pF Chip Capacitor
2.2
μF,
50 V Chip Capacitors
10K pF Chip Capacitors
220 nF, 50 V Chip Capacitor
1000 pF Chip Capacitors
0.1
μF,
50 V Chip Capacitors
20K pF Chip Capacitors
10
μF,
35 V Tantalum Capacitor
22
μF,
35 V Tantalum Capacitor
47
μF,
50 V Electrolytic Capacitor
2.2
μF,
Chip Capacitor
470
μF
63V Electrolytic Capacitors
Jumpers from PCB to T1 & T2
17.5 nH, 6 Turn Inductor
8 Turn, #20 AWG ID = 0.125″ Inductor, Hand Wound
82 nH, Inductor
9 Turn, #18 AWG Inductor, Hand Wound
20
Ω,
3 W Axial Leaded Resistor
Balun
Balun
Part Number
2743021447
ATC100B470JT500XT
ATC100B430JT500XT
ATC100B101JT500XT
ATC100B7R5CT500XT
C1825C225J5RAC
ATC200B103KT50XT
C1812C224J5RAC
ATC100B102JT50XT
CDR33BX104AKYS
ATC200B203KT50XT
T491D106K035AT
T491X226K035AT
476KXM050M
2225X7R225KT3AB
MCGPR63V477M13X26--RH
Copper Foil
B06T
Copper Wire
1812SMS--82NJ
Copper Wire
5093NW20R00J
TUI--9
TUO--4
Vishay
Comm Concepts
Comm Concepts
CoilCraft
CoilCraft
Manufacturer
Fair--Rite
ATC
ATC
ATC
ATC
Kemet
ATC
Kemet
ATC
Kemet
ATC
Kemet
Kemet
Illinois Cap
ATC
Multicomp
*L4 is wrapped around R1.
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
3
B1
C16
+
C13
C12
C11
C15
L3
L4, R1*
C22
C21
C20
C14
C9
C8
C7
C6
J1
CUT OUT AREA
L2
C10
T1
C18
C17
T2
C4
J2
C19
C1
L1
C2
C3 (on side)
MRF6VP2600H
225 MHz
Rev. 3
*
L4 is wrapped around R1.
Figure 3. MRF6VP2600HR6 Test Circuit Component Layout
MRF6VP2600HR6
4
RF Device Data
Freescale Semiconductor
--
C23
C24
--
C25
--
C5
TYPICAL CHARACTERISTICS
1000
C
iss
C, CAPACITANCE (pF)
C
oss
100
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
I
D
, DRAIN CURRENT (AMPS)
T
J
= 200_C
T
J
= 150_C
10
T
J
= 175_C
100
10
C
rss
1
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
1
1
T
C
= 25_C
10
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
100
Note:
Each side of device measured separately.
Figure 4. Capacitance versus Drain-
-Source Voltage
26.5
26
G
ps
, POWER GAIN (dB)
25.5
25
24.5
24
23.5
23
22.5
10
100
P
out
, OUTPUT POWER (WATTS) PULSED
V
DD
= 50 Vdc, I
DQ
= 2600 mA
f = 225 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
G
ps
80
70
η
D,
DRAIN EFFICIENCY (%)
P
out
, OUTPUT POWER (dBm)
60
50
η
D
40
30
20
10
0
1000
64
Note:
Each side of device measured separately.
Figure 5. DC Safe Operating Area
P3dB = 59.7 dBm (938 W)
62
P2dB = 59.1 dBm (827 W)
60
58
56
54
52
27
P1dB = 53.3 dBm (670 W)
Ideal
Actual
V
DD
= 50 Vdc, I
DQ
= 2600 mA, f = 225 MHz
Pulse Width = 12
μsec,
Duty Cycle = 1%
28
29
30
31
32
33
34
35
36
37
38
P
in
, INPUT POWER (dBm)
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
26
25
G
ps
, POWER GAIN (dB)
50 V
24
23
22
21
0
40 V
V
DD
= 50 Vdc
I
DQ
= 2600 mA
f = 225 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
100
200
300
35 V
V
DD
= 30 V
400
500
600
700
45 V
G
ps
, POWER GAIN (dB)
28
27
26
25
24
23
22
21
10
Figure 7. Pulsed CW Output Power versus
Input Power
80
T
C
= --30_C
25_C
85_C
V
DD
= 50 Vdc, I
DQ
= 2600 mA
f = 225 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
η
D
G
ps
70
60
50
40
30
20
10
1000
η
D,
DRAIN EFFICIENCY (%)
100
P
out
, OUTPUT POWER (WATTS) PULSED
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
5
