Freescale Semiconductor
Technical Data
Document Number: MRF7S35015HS
Rev. 2, 4/2011
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for pulsed wideband applications operating at frequencies
between 3100 and 3500 MHz.
•
Typical Pulsed Performance: V
DD
= 32 Volts, I
DQ
= 50 mA,
P
out
= 15 Watts Peak (3 Watts Avg.), Pulsed Signal, f = 3500 MHz,
Pulse Width = 100
μ
sec, Duty Cycle = 20%
Power Gain — 16 dB
Drain Efficiency — 41%
•
Typical WiMAX Performance: V
DD
= 32 Volts, I
DQ
= 150 mA,
P
out
= 1.8 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM
3
/
4
, 4 Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
Power Gain — 18 dB
Drain Efficiency — 16%
RCE — --33 dB (EVM — 2.2% rms)
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 15 Watts Peak
Power
•
Capable of Handling 3 dB Overdrive @ 32 Vdc
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
MRF7S35015HSR3
3100-
-3500 MHz, 15 W PEAK, 32 V
PULSED
LATERAL N-
-CHANNEL
RF POWER MOSFET
CASE 465J-
-02, STYLE 1
NI-
-400S-
-240
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 15 W Pulsed, 100
μsec
Pulse Width, 20% Duty Cycle
Case Temperature 81°C, 15 W Pulsed, 500
μsec
Pulse Width, 10% Duty Cycle
Symbol
R
θJC
Value
(2,3)
0.60
0.73
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008, 2011. All rights reserved.
MRF7S35015HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 33.5
μAdc)
Gate Quiescent Voltage
(V
DD
= 32 Vdc, I
D
= 50 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 300 mAdc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 32 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 32 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 32 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.12
92
46
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
1.8
0.1
2
2.5
1.7
2.7
3.3
0.3
Vdc
Vdc
Vdc
I
GSS
I
DSS
I
DSS
—
—
—
—
—
—
1
2
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 32 Vdc, I
DQ
= 50 mA, P
out
= 15 W Peak (3 W Avg.), f = 3100 MHz and
f = 3500 MHz, Pulsed, 100
μsec
Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
13
38
—
16
41
--12
19
—
--7
dB
%
dB
Pulsed RF Performance
(In Freescale Application Test Fixture, 50 ohm system) V
DD
= 32 Vdc, I
DQ
= 50 mA, P
out
= 15 W Peak (3 W Avg.),
f = 3100 MHz and f = 3500 MHz, Pulsed, 100
μsec
Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time
Output Pulse Droop
(500
μsec
Pulse Width, 10% Duty Cycle)
Load Mismatch Tolerance
(VSWR = 10:1 at all Phase Angles)
1. Part internally matched both on input and output.
DRP
out
VSWR--T
—
0.2
—
dB
No Degradation in Output Power
MRF7S35015HSR3
2
RF Device Data
Freescale Semiconductor
V
BIAS
B3
+
C9
+
C8
C7
B2
C6
Z15
RF
INPUT
Z1
Z2
Z3
Z4
C10
Z5
Z6
Z7
Z8
Z9
Z10 Z11
Z12 Z13
Z14
B1
+
C4
C3
+
C2
+
C1
V
SUPPLY
Z17
Z16
Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26 Z27
C5
Z28 Z29 Z30 Z31
RF
OUTPUT
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15*
Z16
Z17*
0.375″ x 0.071″ Microstrip
0.126″ x 0.524″ Microstrip
0.079″ x 0.016″ Microstrip
0.153″ x 0.071″ Microstrip
0.076” x 0.520″ Microstrip
0.037″ x 0.252″ Microstrip
0.322″ x 0.073″ Microstrip
0.123″ x 0.440″ Microstrip
0.048″ x 0.073″ Microstrip
0.081″ x 0.184″ Microstrip
0.030″ x 0.262″ Microstrip
0.525″ x 0.336″ Microstrip
0.182″ x 0.466″ Microstrip
0.077″ x 0.466″ Microstrip
0.603″ x 0.048″ Microstrip
0.063″ x 0.618″ Microstrip
0.534″ x 0.040″ Microstrip
Z18
Z19
Z20
Z21
Z22
Z23
Z24
Z25
Z26
Z27
Z28
Z29
Z30
Z31
PCB
0.078″ x 0.454″ Microstrip
0.055″ x 0.244″ Microstrip
0.630″ x 0.073″ Microstrip
0.218″ x 0.038″ Microstrip
0.060″ x 0.552″ Microstrip
0.079″ x 0.038″ Microstrip
0.062″ x 0.526″ Microstrip
0.032″ x 0.070″ Microstrip
0.110″ x 0.526″ Microstrip
0.053″ x 0.072″ Microstrip
0.028″ x 0.070″ Microstrip
0.098″ x 0.148″ Microstrip
0.062″ x 0.526″ Microstrip
0.529″ x 0.070″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
* Line length includes microstrip bends
Figure 1. MRF7S35015HSR3 Test Circuit Schematic
Table 5. MRF7S35015HSR3 Test Circuit Component Designations and Values
Part
B1*
B2, B3
C1
C2
C3, C9
C4, C5, C10
C6
C7
C8
Long Ferrite Bead
Short Ferrite Beads
470
μF,
63 V Electrolytic Capacitor
47
μF,
50 V Electrolytic Capacitor
22
μF,
35 V Tantalum Capacitors
2.7 pF Chip Capacitors
0.8 pF Chip Capacitor
0.1
μF
Chip Capacitor
22
μF,
25 V Tantalum Capacitor
Description
Part Number
2743021447
2743019447
477KXM063M
476KXM050M
T491X226K035AT
ATC100B2R7BT500XT
ATC100B0R8BT500XT
CDR33BX104AKYS
T491D226K025AT
Manufacturer
Fair--Rite
Fair--Rite
Illinois Cap
Illinois Cap
Kemet
ATC
ATC
AVX
Kemet
* B1 is removed for WiMAX circuit performance.
MRF7S35015HSR3
RF Device Data
Freescale Semiconductor
3
C8
C3
B3
C9
B2
C7
C6
C4
B1
C2
C1
C10
CUT OUT AREA
C5
MRF7S35015H
Rev. 1
Figure 2. MRF7S35015HSR3 Test Circuit Component Layout
MRF7S35015HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000
10
T
J
= 200°C
T
J
= 175°C
1
T
J
= 150°C
C, CAPACITANCE (pF)
100
C
iss
10
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
1
C
rss
0.1
0
5
10
15
20
25
30
35
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
C
oss
0.1
1
T
C
= 25°C
10
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
100
Figure 3. Capacitance versus Drain-
-Source Voltage
17
16.5
G
ps
, POWER GAIN (dB)
16
15.5
15
14.5
14
13.5
13
2
3100 MHz
η
D
V
DD
= 32 Vdc, I
DQ
= 50 mA
Pulse Width = 100
μsec
Duty Cycle = 20%
10
P
out
, OUTPUT POWER (WATTS) PULSED
30
3300 MHz
f = 3500 MHz
G
ps
50
P
out
, OUTPUT POWER (dBm) PULSED
3300 MHz 45
40
35
30
25
20
15
10
η
D,
DRAIN EFFICIENCY (%)
3500 MHz
47
46
45
44
43
42
41
40
39
38
21
22
Figure 4. DC Safe Operating Area
3100 MHz
P3dB = 43 dBm (19.8 W)
P2dB = 42.7 dBm (19 W)
Ideal
P1dB = 42.2 dBm (16.7 W)
Actual
V
DD
= 32 Vdc, I
DQ
= 50 mA, f = 3500 MHz
Pulse Width = 100
μsec,
Duty Cycle = 20%
23
24
25
26
27
28
29
30
P
in
, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
20
19
G
ps
, POWER GAIN (dB)
18
17
16
15
14
13
1
10
P
out
, OUTPUT POWER (WATTS) PULSED
30
V
DD
= 32 Vdc, f = 3500 MHz
Pulse Width = 100
μsec,
Duty Cycle = 20%
I
DQ
= 300 mA
150 mA
100 mA
50 mA
G
ps
, POWER GAIN (dB)
17
16
15
14
13
12
11
10
Figure 6. Pulsed Output Power versus
Input Power
32 V
30 V
28 V
26 V
V
DD
= 24 V
10
P
out
, OUTPUT POWER (WATTS) PULSED
30
I
DQ
= 50 mA, f = 3500 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
1
Figure 7. Pulsed Power Gain versus
Output Power
Figure 8. Pulsed Power Gain versus
Output Power
MRF7S35015HSR3
RF Device Data
Freescale Semiconductor
5
