MS12N65
N-Channel Enhancement Mode Power MOSFET
Description
The MS12N65 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
•
Low gate charge ( typical 52nC)
•
High ruggedness
•
Fast switching
•
100% avalanche tested
•
Improved dv/dt capability
•
RoHS compliant package
Application
•
Power Factor Correction
•
LCD TV Power
•
Full and Half Bridge Power
Packing Information
Shipping：50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V
DS
V
GS
I
D
I
DM
E
AS
E
AR
dV/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
Pulsed Drain Current
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dV/dt
Value
650
±30
12
7.4
48
865
23.1
4.5
Unit
V
V
A
A
A
mJ
mJ
V/ns
Publication Order Number: [MS12N60]
©
Bruckewell Technology Corporation Rev. A -2014
MS12N65
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Power Dissipation (TC=25°C)
P
D
T
J
/T
STG
NOTE:
1. Repetitive rating; pulse width limited by maximum junction temperature.
Thermal characteristics (Tc=25°C unless otherwise noted)
Parameter
Typical thermal resistance
Power Dissipation (TC=100°C)
Operating Junction and Storage Temperature
Value
231
1.85
-55 to +150
Unit
W
W
°C
Symbol
RθJA
Rthjc
Value
62.5
0.54
Unit
°C/W
Static Characteristics
Symbol
Test Conditions
V
GS
*R
DS(ON)
BV
DSS
△BV
DSS
/△T
J
I
DSS
G
FS
I
GSS
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10 V , I
D
= 6 A
V
GS
= 0 V , I
D
= 250μA
I
D
=250μA, Referenced to 25°C
V
DS
= 650 V , V
GS
= 0 V
V
DS
= 520 V , V
GS
= 0 V , T
j
= 125°C
V
DS
= 30 V, V
DS
= 0 V
V
DS
= -30 V, V
DS
= 0 V
Min
2.0
--
650
Typ.
Max.
4.0
Units
V
Ω
V
0.63
710
0.7
0.75
--
--
--
10
100
100
uA
S
nA
--
--
-100
Dynamic Characteristics
Symbol
Test Conditions
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
tf
C
ISS
C
OSS
C
RSS
V
DS
= 25 V, V
GS
= 0 V,
f=1.0MHz
V
DS
= 325 V, I
D
= 10 A,
R
G
= 25 Ω
V
DS
= 520 V,I
D
= 12 A,
V
GS
= 10 V
Min
--
--
--
--
--
--
--
--
--
--
Typ.
52
8.5
20
30
90
140
90
1850
180
20
Max.
--
--
--
--
--
--
--
--
--
--
Units
nC
ns
ns
ns
ns
pF
pF
pF
Publication Order Number: [MS12N60]
©
Bruckewell Technology Corporation Rev. A -2014
MS12N65
N-Channel Enhancement Mode Power MOSFET
Source-Drain Diode Characteristics
Symbol
Test Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. I
AS
=12A, V
DD
=50V, R
G
=25Ω, Starting TJ =25°C
3. I
SD
≤12A, di/dt≤300A/μs, V
DD
≤BV
DSS
, Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Ordering Information
Package
TO-220
IF = 12 A , V
GS
= 0
IF = 12 A , V
GS
= 0 , dIF/dt=100A/μs
Min
--
--
--
--
--
Typ.
--
--
--
430
5.0
Max.
12
Units
A
48
1.4
--
--
V
ns
uC
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Publication Order Number: [MS12N60]
©
Bruckewell Technology Corporation Rev. A -2014
MS12N65
N-Channel Enhancement Mode Power MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS12N60]
©
Bruckewell Technology Corporation Rev. A -2014
