MS18N50
500V N-channel MOSFET
Description
The MS18N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
•
Originative New Design
•
Very Low Intrinsic Capacitances
•
Excellent Switching Characteristics
•
100% EAS Test
•
Extended Safe Operating Area
•
RoHS compliant package
Application
•
High current, High speed switching
•
PFC (Power Factor Correction)
•
SMPS (Switched Mode Power Supplies)
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
V
DS
V
GS
I
D
I
DM
E
AS
E
AR
dV/dt
T
J,
Tstg
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
Drain Current -Pulsed
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature
Power Dissipation (TC=25°C)
Power Dissipation (TC=100°C)
Value
500
±30
18
10.8
72
990
23.5
4.5
-55~+150
238
1.8
Unit
V
V
A
A
A
mJ
mJ
V/ns
°C
W
W
• Drain current limited by maximum junction temperature
Publication Order Number: [MS18N50]
©
Bruckewell Technology Corporation Rev. A -2014
MS18N50
500V N-channel MOSFET
Thermal Characteristics
Symbol
Parameter
Rthjc
RθJA
Thermal Resistance resistance
Thermal Resistance resistance
Value
0.53
°C/W
62.5
Units
Static Characteristics
Symbol
Test Conditions
V
GS
BV
DSS
△BV
DSS
/△T
J
I
DSS
I
GSSF
I
GSSR
*R
DS(ON)
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 0 V , I
D
= 250μA
I
D
= 250μA, Referenced to 25°C
V
DS
= 500 V , V
GS
= 0 V
V
DS
= 400 V , V
GS
= 0 V , T
C
= 125°C
V
GS
=-30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
V
GS
= 10 V , I
D
= 9 A
Min
3.0
500
--
--
--
Typ.
Max.
5.0
Units
V
V
V/°C
uA
nA
nA
Ω
--
0.6
--
--
--
--
1
10
100
-100
--
0.25
0.32
Dynamic Characteristics
Symbol
Test Conditions
C
ISS
C
OSS
C
RSS
t
d(on)
t
r
t
d(off)
tf
Q
g
Q
gs
Q
gd
V
DD
= 400 V, I
D
=18 A , V
GS
=10 V
V
DD
= 250 V, I
D
= 18 A , R
G
= 25 Ω
V
DS
= 25 V, V
GS
= 0 V , f=1.0MHz
Min
--
--
--
--
--
--
--
--
--
--
Typ.
2500
400
40
70
190
100
100
48.5
14
22
Max.
--
--
--
--
--
--
--
--
--
--
Units
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Source-Drain Diode Characteristics
Symbol
Test Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
I
S
= 18 A , V
GS
= 0 V
I
F
= 18 A , V
GS
= 0 V
diF/dt=100A/us
Min
--
--
--
--
--
Typ.
--
--
--
550
5.5
Max.
18
Units
A
72
1.5
--
--
V
ns
uC
Publication Order Number: [MS18N50]
©
Bruckewell Technology Corporation Rev. A -2014
MS18N50
500V N-channel MOSFET
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L= 5.5mH,I
AS
= 18.0A,V
DD
=50V,R
G
=25Ω,Starting TJ=25°˚C
3. I
SD
≤ 16.0 A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MS18N50]
©
Bruckewell Technology Corporation Rev. A -2014
MS18N50
500V N-channel MOSFET
■Characteristic Curves
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
CURRENT AND GATE VOLTAGE
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MS18N50]
©
Bruckewell Technology Corporation Rev. A -2014
MS18N50
500V N-channel MOSFET
■Typical
Electrical Characteristics
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MS18N50]
©
Bruckewell Technology Corporation Rev. A -2014
