MS75N75
75V N-Channel MOSFET
Features
•
RDS(on) (Max 0.017 Ω )@VGS=10V
•
Gate Charge (Typical 85nC)
•
Improved dv/dt Capability, High Ruggedness
•
100% Avalanche Tested
•
Maximum Junction Temperature Range (175°C)
•
RoHS compliant package
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
J
/T
STG
T
L
Drain-Source Voltage
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
Drain Current –Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC=25°C)
- Derate above 25°C
1.27
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
-55 to +150
300
W/°C
°C
°C
Value
75
75
52.5
300
±20
1350
9
7.0
190
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
●Drain
current limited by maximum junction temperature
Publication Order Number: [MS75N75]
©
Bruckewell Technology Corporation Rev. A -2014
MS75N75
75V N-Channel MOSFET
Thermal Resistance Characteristics
Symbol
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
1.43
Units
°C/W
62.5
On Characteristics
Symbol
Parameter
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Test Conditions
V
DS
= V
GS
,I
D
= 250μA
V
GS
= 10 V,I
D
= 3.75 A
Min
2.0
--
Typ.
--
0.014
Max.
4.0
0.017
Units
V
Ω
Off Characteristics
Symbol
Parameter
BV
DSS
△BV
DSS
/△T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Current,Forward
Gate-Body Leakage
Current,Reverse
Test Conditions
V
GS
= 0 V , I
D
= 250μA
I
D
= 250μA, Referenced to 25°C
V
DS
= 75 V , V
GS
= 0 V
V
DS
= 60 V , V
C
= 125°C
V
GS
= 20 V , V
DS
= 0 V
V
GS
= -20 V , V
DS
= 0 V
Min
75
--
--
--
--
Typ.
--
0.08
--
--
--
Max.
--
--
10
100
100
-100
Units
V
V/°C
μA
μA
nA
Dynamic Characteristics
Symbol
Parameter
C
ISS
C
OSS
C
RSS
Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0MHz
Min
--
--
--
Typ.
3000
1100
250
Max.
--
--
--
Units
pF
pF
pF
Switching Characteristics
Symbol
Parameter
t
d(on)
t
r
t
d(off)
tf
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
Min
--
Typ.
25
300
150
180
85
15
40
Max.
60
700
310
370
110
--
--
Units
ns
ns
ns
ns
nC
nC
nC
V
DS
= 37.5 V, I
D
= 75 A,
R
G
= 25 Ω
--
--
--
--
V
DS
= 60 V,I
D
= 10 A,
V
GS
= 75 V
--
--
Publication Order Number: [MS75N75]
©
Bruckewell Technology Corporation Rev. A -2014
MS75N75
75V N-Channel MOSFET
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. L = 0.32mH, I
AS
=75A, V
DD
= 25V, R
G
= 25Ω , Starting TJ = 25°C
3. I
SD
≤ 75A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 75 A , V
GS
= 0 V
I
S
= 75 A , V
GS
= 0 V
diF/dt=100A/μs
Min
--
--
--
--
--
Typ.
--
--
--
90
250
Max.
75
Units
A
300
1.5
--
--
V
ns
μC
Publication Order Number: [MS75N75]
©
Bruckewell Technology Corporation Rev. A -2014
MS75N75
75V N-Channel MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS75N75]
©
Bruckewell Technology Corporation Rev. A -2014
