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MS868C12
(120V, 30A)
Low IR Schottky Barrier Diode
Features
• Low IR
• Low V
F
• Center tap connection
FUJI Diode
Outline Drawings [mm]
TFP
Connection diagram
868C12
868C12
Applications
• High frequency operation
• DC-DC converters
• AC adapter
Maximum Ratings and Characteristics
Maximum ratings (at Ta=25˚C Unless otherwise specified)
Item
Repetitive peak reverse voltage
Average output current
Non-repetitive surge current **
Operating junction temperature
Storage temperature
*Out put current of center tap full wave connection.
**Rating per element
Symbols
V
RRM
I
O
I
FSM
T
j
T
stg
Conditions
Ratings
120
Units
V
A
A
˚C
˚C
Square wave duty =1/2
Tc =115˚C
Sine wave, 10ms 1shot
30 *
190
150
-40 to +150
Electrical characteristics (at Ta=25˚C Unless otherwise specified)
Item
Forward voltage***
Reverse current***
Thermal resistance
***Rating per element
Symbols
V
F
I
R
Rth(j-c)
Conditions
I
F
= 15 A
V
R
=V
RRM
Junction to case
Maximum
0.88
200
1.2
Units
V
µA
˚C/W
Mechanical characteristics
Item
Approximate mass
Conditions
Ratings
0.8
Units
g
1
MS868C12 (120V, 30A)
FUJI Diode
http://www.fujisemi.com
360
360
I
0
VR
2
MS868C12 (120V, 30A)
FUJI Diode
http://www.fujisemi.com
Junction Capacitance Characteristic (max.)
1000
Junction Capacitance (pF)
360
I
0
VR=60V
100
Cj
10
1
10
100
1000
VR
Reverse Voltage (V)
3
MS868C12 (120V, 30A)
Transient Thermal Impedance (max.)
FUJI Diode
http://www.fujisemi.com
10
1
(°C/W)
Rth(j-c):1.2°C/W
10
0
Transient Thermal Impedance
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec)
4
MS868C12 (120V, 30A)
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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may arise from the use of the applications described herein.
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