Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0100
Features
• Cascadable 50
Ω
Gain Block
• 3 dB Bandwidth:
DC to 1.3 GHz
• High Gain:
18.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
, silicon
bipolar MMIC process which uses
nitride self-alignment, ion implanta-
tion, and gold metallization to
achieve excellent performance,
uniformity and reliability. The use
of an external bias resistor for
temperature and current stability
also allows bias flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge or
ball bonding using 0.7 mil gold
wire.
[1]
See APPLICATIONS section,
“Chip Use”.
Chip Outline
[1]
Description
The MSA-0100 is a high performance
silicon bipolar Monolithic Microwave
Integrated Circuit (MMIC) chip. This
MMIC is designed for use as a general
purpose 50
Ω
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers in
commercial, industrial and military
applications.
Typical Biasing Configuration
R
bias
V
CC
> 7 V
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section “Silicon MMIC Chip Use” for
additional information.
RFC (Optional)
C
block
IN
MSA
C
block
OUT
V
d
= 5 V
5965-9689E
6-242
MSA-0100 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
40 mA
200 mW
+20 dBm
200°C
–65 to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 45°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting Surface
(T
MS
) = 25°C.
3. Derate at 22.2 mW/°C for T
MS
> 191
°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions
[2]
: I
d
= 17 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.1 GHz
f = 0.1 to 0.7 GHz
Units
dB
dB
GHz
Min.
Typ.
19.0
±
0.6
1.3
1.3:1
1.3:1
Max.
dB
dBm
dBm
psec
V
mV/°C
4.5
5.5
1.5
14.0
150
5.0
–9.0
5.5
Notes:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number
MSA-0100-GP4
Devices Per Tray
100
6-243
MSA-0100 Typical Scattering Parameters
[1]
(Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 17 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.08
.07
.07
.06
.06
.05
.04
.04
.08
.12
.15
.19
.25
.27
.28
.28
171
161
152
143
133
115
84
3
–39
–76
–102
–122
–137
–147
–157
–171
19.0
18.9
18.8
18.6
18.5
18.2
17.7
17.1
15.5
13.7
12.2
10.8
9.4
8.2
7.0
6.0
8.91
8.82
8.72
8.56
8.37
8.15
7.68
7.17
5.95
4.86
4.09
3.47
2.96
2.56
2.24
2.00
174
169
163
156
151
146
136
126
106
90
82
71
60
51
42
35
–22.7
–22.5
–22.3
–22.4
–22.1
–21.9
–21.3
–20.3
–19.3
–17.9
–16.9
–16.4
–15.6
–15.2
–14.8
–14.4
.073
.075
.077
.076
.079
.080
.086
.096
.109
.127
.142
.151
.165
.173
.182
.190
2
6
9
12
14
19
22
26
32
32
36
36
34
32
29
28
.10
.11
.10
.11
.11
.12
.12
.12
.10
.08
.06
.06
.07
.10
.13
.16
–11
–24
–35
–44
–53
–60
–75
–88
–107
–128
–130
–125
–107
–86
–80
–77
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
MSA-0100 Typical Performance, T
A
= 25°C
(unless otherwise noted)
21
18
Gain Flat to DC
15
20
25
0.1 GHz
0.5 GHz
1.0 GHz
G
p
(dB)
20
18
16
8
NF
8
6
4
P
1 dB
G
P
2.0 GHz
10
6
4
9
6
P
1 dB
(dBm)
2
0
–2
–55
5
3
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
0
10
15
20
I
d
(mA)
25
30
–25
+25
+85
+125
TEMPERATURE (°C)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 17 mA.
Figure 2. Power Gain vs. Current.
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 0.5 GHz, I
d
= 17 mA.
6
I
d
= 20 mA
4
7.0
6.5
I
d
= 13 mA
I
d
= 17 mA
I
d
= 20 mA
P
1 dB
(dBm)
I
d
= 17 mA
NF (dB)
2
6.0
0
I
d
= 13 mA
5.5
–2
–4
0.1
5.0
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-244
NF (dB)
12
G
p
(dB)
G
p
(dB)
15
MSA-0100 Chip Dimensions
NOT APPLICABLE
INPUT
394
µm
15.5 mil
GROUND
OPTIONAL
OUTPUT
[1]
394
µm
15.5 mil
Chip thickness is 114
µm/4.5
mil. Bond Pads are
41
µm/1.6
mil typical on each side.
Note 1: Output contact is made by die attaching
the backside of the die.
6-245
