Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0385
Features
• Cascadable 50
Ω
Gain Block
• 3 dB Bandwidth:
DC to 2.5 GHz
• 12.0 dB Typical Gain at
1.0 GHz
• 10.0 dBm Typical P
1 dB
at
1.0 GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
plastic package. This MMIC is
designed for use as a general
purpose 50
Ω
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
85 Plastic Package
Description
The MSA-0385 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
Typical Biasing Configuration
R
bias
V
CC
> 7 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 5 V
2
5965-9570E
6-310
MSA-0385 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
70 mA
400 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance
[2,4]
:
θ
jc
= 105°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 9.5 mW/°C for T
C
> 108°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 35 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.1 GHz
f = 1.0 GHz
f = 0.1 to 1.6 GHz
Units
dB
Min.
10.0
Typ.
12.5
12.0
±
0.7
2.5
1.5:1
1.7:1
Max.
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
4.0
6.0
10.0
23.0
125
5.0
–8.0
6.0
Note:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
6-311
MSA-0385 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 35 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.09
.09
.08
.07
.07
.06
.05
.08
.12
.20
.25
.28
.42
.50
178
171
166
160
155
152
–169
–174
–173
178
170
160
134
99
12.6
12.5
12.4
12.3
12.1
11.9
11.2
10.4
9.5
8.4
7.5
6.5
4.7
2.7
4.26
4.24
4.17
4.10
4.01
3.92
3.63
3.29
2.98
2.64
2.36
2.12
1.71
1.37
175
170
161
151
142
133
112
92
79
63
47
33
7
–18
–18.1
–18.4
–18.4
–18.0
–17.9
–17.6
–16.5
–15.6
–14.6
–14.1
–13.5
–13.0
–12.2
–12.0
.124
.120
.121
.126
.127
.132
.149
.167
.186
.198
.211
.207
.224
.252
2
3
6
8
12
12
18
19
22
20
17
13
4
–7
.13
.13
.14
.15
.16
.18
.21
.23
.25
.26
.25
.24
.20
.23
–10
–20
–41
–57
–71
–84
–112
–136
–150
–166
–174
–180
168
133
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
14
12
Gain Flat to DC
10
60
T
C
= +85°C
50 T
C
= +25°C
T
C
= –25°C
40
30
20
10
0
0
1
2
3
V
d
(V)
4
5
6
6
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
15
20
25
30
I
d
(mA)
35
40
50
14
12
G
p
(dB)
6
4
2
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
I
d
(mA)
8
G
p
(dB)
I
d
= 50 mA
10
8
4
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 35 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
G
p
(dB)
13
12
11
G
P
18
15
7.0
6.5
P
1 dB
(dBm)
9
8
9
I
d
= 35 mA
6
NF (dB)
10
P
1 dB
(dBm)
P
1 dB
12
6.0
NF (dB)
7
NF
6
5
–25
0
+25
+55
+85
TEMPERATURE (°C)
I
d
= 20 mA
0
0.1
0.2 0.3
3
5.5
I
d
= 20 mA
I
d
= 35 mA
5.0
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
I
d
= 50 mA
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=35mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-312
85 Plastic Package Dimensions
.020
.51
GROUND
4
0.143
±
0.015
3.63
±
0.38
1
RF INPUT
A03
45°
3
RF OUTPUT
AND BIAS
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
.006
±
.002
.15
±
.05
GROUND
.085
2.15
2
.060
±
.010
1.52
±
.25
5° TYP.
.07
0.43
.286
±
.030
7.36
±
.76
6-313
