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MSA-0504

Cascadable Silicon Bipolar MMIC Amplifier

器件类别:无线/射频/通信    射频和微波   

厂商名称:HP(Keysight)

厂商官网:http://www.semiconductor.agilent.com/

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器件参数
参数名称
属性值
厂商名称
HP(Keysight)
Reach Compliance Code
unknow
安装特点
SURFACE MOUNT
端子数量
4
封装主体材料
PLASTIC/EPOXY
封装等效代码
SL,4LEAD,.145CIRC
电源
8.4 V
最大压摆率
100 mA
表面贴装
YES
技术
BIPOLAR
Base Number Matches
1
文档预览
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0504
Features
• Cascadable 50
Gain Block
• High Output Power:
18.0 dBm Typical P
1 dB
at
1.0 GHz
• Low Distortion:
29.0 dBm Typical IP
3
at 1.0 GHz
• 7.0 dB Typical Gain at
1.0 GHz
• Low Cost Plastic Package
in a low cost plastic package. This
MMIC is designed for use as a
general purpose 50
gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial systems.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
04A Plastic Package
Description
The MSA-0504 is a high perfor-
mance medium power silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) housed
Typical Biasing Configuration
R
bias
V
CC
> 12 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 8.4 V
2
5965-9580E
6-350
MSA-0504 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
135 mA
1.5 W
+25 dBm
200°C
–65 to 150°C
Thermal Resistance
[2,4]
:
θ
jc
= 75°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 13.3 mW/°C for T
C
> 88°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
P
1 dB
G
P
∆G
P
f
3 dB
VSWR
IP
3
NF
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 80 mA, Z
O
= 50
Output Power at 1 dB Gain Compression
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
[2]
Input VSWR
Output VSWR
Third Order Intercept Point
50
Noise Figure
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 0.1 to 1.5 GHz
Units
dBm
dBm
dB
Min.
16.0
6.0
Typ.
19.0
18.0
7.5
7.0
±
0.75
2.3
1.6:1
2.0:1
Max.
dB
GHz
dBm
dB
psec
V
mV/°C
6.7
29.0
6.5
180
8.4
–16.0
10.1
Notes:
1. The recommended operating current range for this device is 60 to 100 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 0.1 GHz Gain (G
P
).
6-351
MSA-0504 Typical Scattering Parameters (T
A
= 25°C, I
d
= 80 mA)
Freq.
MHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
5
25
50
100
200
400
600
800
1000
1500
2000
2500
3000
.54
.24
.18
.14
.14
.14
.14
.15
.17
.23
.33
.42
.49
–43
–112
–142
–156
–168
–174
–175
–174
–174
–179
171
156
146
14.7
9.3
8.1
7.8
7.6
7.5
7.4
7.2
7.0
6.4
5.5
4.3
3.2
5.43
2.92
2.54
2.45
2.40
2.37
2.34
2.29
2.24
2.09
1.88
1.64
1.44
160
155
161
166
163
150
137
124
111
80
51
27
6
–18.4
–13.8
–13.7
–13.7
–13.7
–13.7
–13.6
–13.5
–13.6
–13.3
–12.8
–13.0
–12.8
.120
.204
.206
.207
.206
.206
.208
.211
.209
.216
.230
.224
.230
37
12
3
3
1
1
–1
–1
–3
–4
–10
–12
–11
.63
.24
.16
.13
.13
.16
.20
.25
.29
.37
.48
.51
.55
–39
–101
–125
–137
–146
–143
–144
–148
–154
–168
178
165
157
0.60
0.99
1.17
1.18
1.20
1.19
1.18
1.15
1.14
1.06
0.91
0.90
0.92
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
10
6:1
120
T
C
= +85°C
T
C
= +25°C
8
5:1
90
0.1 GHz
T
C
= –25°C
GAIN (dB)
V
d
(V)
Output
Input
0.1
0.2 0.3
0.5
1.0
2.0
4.0
VSWR
6
0.5 GHz
4:1
60
4
1.5 GHz
2.0 GHz
3:1
1.0 GHz
2
2:1
30
0
8
10
12
14
16
18
20
22
24
POWER OUT (dBm)
1:1
FREQUENCY (GHz)
0
0
3
6
I
d
(mA)
9
12
Figure 1. Typical Gain vs. Power Out,
T
A
= 25°C, I
d
= 80 mA.
Figure 2. VSWR vs. Frequency,
I
d
= 80 mA.
Figure 3. Device Current vs. Voltage.
22
14
12
34
IP
3
(dBm)
20
10
0.5 GHz
30
IP
3
26
P
1 dB
(dBm)
Gp (dB)
18
8
6
4
1.0 GHz
16
22
P
1 dB
(dBm)
14
2
2.0 GHz
12
–25
0
+25
+85
0
.01
.05
0.1
0.5 1.0
5.0
FREQUENCY (GHz)
18
P
1 dB
14
60
70
80
I
d
(mA)
90
100
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, vs. Case Temperature,
I
d
= 80 mA.
Figure 5. Gain vs. Frequency,
I
d
= 80 to 100 mA.
Figure 6. Output Power at 1 dB Gain
Compression, Third Order Intercept
vs. Current, f = 1.0 GHz.
6-352
04A Plastic Package Dimensions
12.39 ± 0.76
(0.488 ± 0.030)
4
GROUND
0.76 (0.030)
DIA.
RF INPUT
0.76 (0.030)
1
4.29
(0.169)
1
5
3
0.96 (0.038)
RF OUTPUT
& BIAS
2
GROUND
0.51
(0.020)
NOTES:
(UNLESS OTHERWISE SPECIFIED)
1. DIMENSIONS ARE IN
MILLIMETERS (INCHES)
2. TOLERANCES
mm .XX = ± 0.13
in .XXX = ± 0.005
0.20 ± 0.050
(0.008 ± 0.002)
2.54 ± 0.25
(0.100 ± 0.010)
3.68
(0.145)
DIMENSIONS ARE IN MILLIMETERS (INCHES).
6-353
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