Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0600
Features
• Cascadable 50
Ω
Gain Block
• Low Operating Voltage
(3.5 V typical V
d
)
• 3 dB Bandwidth:
DC to 1.0 GHz
• High Gain:
19.5 dB Typical at 0.5 GHz
• Low Noise Figure:
2.8 dB Typical at 0.5 GHz
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.
[1]
See APPLICATIONS
section, “Chip Use”.
Chip Outline
[1]
Description
The MSA-0600 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50
Ω
gain block. Typical
applications include narrow and
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section “Silicon MMIC Chip Use” for
additional information.
Typical Biasing Configuration
R
bias
V
CC
> 5 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 3.5 V
2
5965-9583E
6-362
MSA-0600 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
50 mA
200 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 50°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting Surface
(T
MS
) = 25°C.
3. Derate at 20 mW/°C for T
Mounting Surface
> 190°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions
[2]
: I
d
= 16 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.1 GHz
f = 0.1 to 0.6 GHz
Units
dB
dB
GHz
Min.
Typ.
20.5
±
0.7
1.0
1.9:1
1.8:1
Max.
dB
dBm
dBm
psec
V
mV/°C
3.1
2.8
2.0
14.5
200
3.5
–8.0
3.9
Notes:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number
MSA-0600-GP4
Devices Per Tray
100
6-363
MSA-0600 Typical Scattering Parameters
[1]
(Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 16 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.05
.07
.09
.11
.13
.15
.19
.25
.32
.40
.45
.49
.51
.51
.51
.51
–148
–134
–125
–121
–120
–119
–121
–123
–134
–149
–157
–171
–174
179
170
162
20.6
20.4
20.2
20.0
19.7
19.4
18.7
17.9
15.7
13.5
11.6
9.9
8.3
6.9
5.7
4.7
10.66
10.48
10.28
10.01
9.71
9.34
8.60
7.82
6.10
4.73
3.79
3.12
2.60
2.21
1.93
1.71
173
166
159
151
145
140
123
117
96
79
70
61
51
43
37
29
–23.3
–23.1
–22.6
–22.4
–22.1
–21.8
–20.7
–19.8
–18.3
–17.4
–16.9
–16.6
–16.4
–16.3
–16.0
–15.9
.068
.070
.074
.076
.078
.081
.092
.102
.122
.136
.142
.148
.152
.153
.159
.161
4
8
13
15
17
20
25
26
29
27
30
28
25
26
24
24
.05
.09
.13
.16
.20
.22
.25
.28
.29
.26
.23
.19
.16
.12
.10
.11
–67
–91
–102
–110
–117
–124
–136
–148
–168
175
169
168
173
–170
–149
–126
1.05
1.04
1.01
1.00
0.98
0.97
0.93
0.90
0.89
0.91
0.97
1.03
1.10
1.22
1.31
1.41
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
21
18
Gain Flat to DC
15
G
p
(dB)
25
Gp (dB)
21
0.1 GHz
0.5 GHz
20
19
18
17
2.0 GHz
P
1 dB
(dBm)
20
1.0 GHz
G
p
(dB)
G
P
12
9
6
15
5
4
3
2
1
0
–55 –25
+25
+85
+125
NF
P
1 dB
5
4
3
2
1
0
TEMPERATURE (°C)
NF (dB)
10
5
3
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
0
10
15
20
25
30
I
d
(mA)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 16 mA.
Figure 2. Power Gain vs. Current.
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 0.5 GHz, I
d
= 16 mA.
12
I
d
= 30 mA
8
P
1 dB
(dBm)
NF (dB)
4.0
3.5
4
I
d
= 20 mA
3.0
I
d
= 16 mA
0
I
d
= 12 mA
-4
0.1
2.5
I
d
= 12 mA
I
d
= 16 mA, 30 mA
I
d
= 20 mA
0.1
0.2 0.3
0.5
1.0
2.0
4.0
2.0
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-364
MSA-0600 Chip Dimensions
INPUT
300
µm
12.8 mil
300
µm
12.8 mil
GROUND
6-365
