Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0686
Features
• Cascadable 50
Ω
Gain Block
• Low Operating Voltage:
3.5 V Typical V
d
• 3 dB Bandwidth:
DC to 0.8 GHz
• High Gain:
18.5 dB Typical at 0.5 GHz
• Low Noise Figure:
3.0 dB Typical at 0.5 GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Available
[1]
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Surface
Mount Semiconductors”.
Description
The MSA-0686 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50
Ω
gain block.
Applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
86 Plastic Package
Typical Biasing Configuration
R
bias
V
CC
> 5 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 3.5 V
2
5965-9588E
6-382
MSA-0686 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
50 mA
200 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance
[2,4]
:
θ
jc
= 120°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 8.3 mW/°C for T
C
> 126°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 16 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.1 GHz
f = 0.5 GHz
f = 0.1 to 0.5 GHz
Units
dB
Min.
16.5
Typ.
20.0
18.5
±
0.7
0.8
1.7:1
1.7:1
Max.
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
2.8
3.0
2.0
14.5
225
3.5
–8.0
4.2
Notes:
1. The recommended operating current range for this device is 12 to 20 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0686-TR1
MSA-0686-BLK
No. of Devices
1000
100
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-383
MSA-0686 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 16 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
Note:
.06
.06
.07
.08
.08
.09
.12
.15
.25
.34
.43
.49
.56
.61
.70
–175
–169
–164
–158
–154
–152
–152
–154
–171
171
155
140
128
118
99
20.1
19.8
19.4
19.1
18.7
18.0
17.2
16.3
14.0
11.9
9.8
8.0
6.4
5.0
2.4
10.08
9.77
9.35
8.98
8.58
7.94
7.25
6.51
5.01
3.94
3.09
2.51
2.09
1.78
1.32
170
161
152
144
135
128
114
102
76
56
42
28
15
3
–18
–23.3
–23.2
–22.5
–22.2
–21.6
–21.1
–20.3
–19.5
–17.6
–16.1
–15.9
–15.3
–15.1
–14.9
–14.7
.069
.069
.075
.078
.083
.088
.097
.106
.133
.157
.161
.171
.175
.180
.185
4
8
13
16
18
21
25
25
22
19
16
11
6
3
–2
.04
.07
.10
.13
.15
.18
.21
.24
.27
.27
.27
.26
.25
.24
.24
–84
–103
–113
–123
–131
–140
–155
–168
165
147
134
124
118
115
118
1.05
1.05
1.03
1.02
1.01
1.01
1.00
0.99
0.99
1.01
1.06
1.10
1.13
1.15
1.16
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
24
21
18
G
p
(dB)
25
Gp (dB)
20
19
18
17
G
P
T
C
= +85°C
T
C
= +25°C
20 T
C
= –25°C
15
12
9
6
3
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
I
d
= 12 mA
I
d
= 16 mA
I
d
= 25 mA
Gain Flat to DC
5
0
0
1
2
3
V
d
(V)
4
5
I
d
(mA)
15
5
P
1 dB
(dBm)
5
NF
P
1 dB
4
3
2
1
0
–25
0
+25
+55
+85
TEMPERATURE (°C)
NF (dB)
10
4
3
2
1
0
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C.
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=16mA.
12
I
d
= 30 mA
8
P
1 dB
(dBm)
4.0
3.5
I
d
= 20 mA
NF (dB)
4
I
d
= 16 mA
3.0
0
I
d
= 12 mA
–4
0.1
2.5
I
d
= 12 mA
I
d
= 16 mA, 30 mA
I
d
= 20 mA
0.1
0.2 0.3
0.5
1.0
2.0
4.0
2.0
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-384
86 Plastic Package Dimensions
0.51
±
0.13
(0.020
±
0.005)
GROUND
4
RF INPUT
1
A06
45°
RF OUTPUT
AND DC BIAS
C
L
3
2.34
±
0.38
(0.092
±
0.015)
2
GROUND
2.67
±
0.38
(0.105
±
0.15)
1.52
±
0.25
(0.060
±
0.010)
5° TYP.
0.203
±
0.051
(0.006
±
0.002)
0.66
±
0.013
(0.026
±
0.005)
0.30 MIN
(0.012 MIN)
8° MAX
0° MIN
2.16
±
0.13
(0.085
±
0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-385
单片机
