MSB7N80 800V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using the advanced planar stripe, DMOS
technology. This latest technology has been especially designed to
minimize on-state resistance, have high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power
supplies, active power factor correction, and electronic lamp ballasts based
on half bridge topology.
FEATURES
•
RDS(on) (typ 1.3
Ω
)@VGS=10V
•
Gate Charge (Typical 39nC)
•
Improved dv/dt Capability, High Ruggedness
•
100% Avalanche Tested
•
Maximum Junction Temperature Range (150°C)
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
d
v
/d
t
P
D
T
J
,T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
(Tc=25°C unless otherwise specified)
Parameter
Value
800
7
5.0
32
±30
850
17.8
4.5
59
- Derate above 25℃
0.48
–55 to + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
-Continuous (T
C
=25℃)
-Continuous (T
C
=100℃)
-Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
•
Drain current limited by maximum junction temperature
©
Bruckewell Technology Corporation
Rev. A -2013
MSB7N80 800V N-Channel MOSFET
Thermal Resistance Characteristics
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Parameter
Typ.
––
––
Max.
1.6
62.5
Units
℃/W
Electrical Characteristics
Symbol
Parameter
(Tc=25°C unless otherwise specified)
Test Conditions
Min
Type
Max
Units
On Characteristics
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V,I
D
=3.5A
3.0
––
--
1.3
5.0
1.6
V
Ω
Off Characteristics
BV
DSS
△BV
DSS
/△T
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
V
GS
=0 V , I
D
=250μA
I
D
=250μA, Referenced to 25℃
V
DS
=800V , V
GS
= 0 V
V
DS
=640V , V
C
= 125℃
V
GS
=30V , V
DS
=0 V
800
––
––
––
––
––
0.6
––
––
––
––
––
10
100
100
V
V/℃
μA
μA
nA
I
DSS
I
GSSF
I
GSSR
V
GS
=-30V , V
DS
=0 V
––
––
–100
nA
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
=0V,
f=1.0MHz
––
––
––
1700
140
15
––
––
––
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
tf
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=640V,I
D
=7.0A,
V
GS
=10 V
V
DS
=400 V, I
D
=7.0A,
R
G
=25Ω
––
––
––
––
––
––
––
50
100
70
70
37
11
15
--
--
--
--
--
––
––
ns
ns
ns
ns
nC
nC
nC
©
Bruckewell Technology Corporation
Rev. A -2013
MSB7N80 800V N-Channel MOSFET
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. L = 25.0mH, IAS =7.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD
≤
7.0A, di/dt
≤
200A/us, VDD
≤
BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width
≤
300us, Duty Cycle
≤
2%
5. Essentially independent of operating temperature.
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
––
––
––
––
––
––
––
––
0.7
8.0
7.0
32.0
1.4
––
––
A
V
us
μC
I
S
=8A, V
GS
=0V
I
S
=8 A , V
GS
= 0V
di
F
/dt=100A/μs
Reverse Recovery Time
Reverse Recovery Charge
©
Bruckewell Technology Corporation
Rev. A -2013
MSB7N80 800V N-Channel MOSFET
•
Characteristic Curves
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs Drain Current
and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with
Source Current and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©
Bruckewell Technology Corporation
Rev. A -2013
MSB7N80 800V N-Channel MOSFET
•
Characteristic Curves
Figure 7. Breakdown Voltage Variation vs
Temperature
Figure 8. On-Resistance Variation vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs
Case Temperature
Figure 11. Transient Thermal Response Curve
©
Bruckewell Technology Corporation
Rev. A -2013
