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MSC015SDA120B

Rectifier Diode, Schottky, 1 Phase, 1 Element, 39A, 1200V V(RRM), Silicon Carbide, TO-247

器件类别:分立半导体    二极管   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Microchip(微芯科技)
Reach Compliance Code
compli
文档预览
MSC015SDA120B
Datasheet
Zero Recovery Silicon Carbide Schottky Diode
Final
May 2018
Zero Recovery Silicon Carbide Schottky Diode
Contents
1 Revision History ............................................................................................................................. 1
1.1 Revision A ........................................................................................................................................... 1
2 Product Overview .......................................................................................................................... 2
2.1 Features .............................................................................................................................................. 2
2.2 Benefits ............................................................................................................................................... 2
2.3 Applications ........................................................................................................................................ 2
3 Electrical Specifications .................................................................................................................. 3
3.1 Absolute Maximum Ratings ................................................................................................................ 3
3.2 Electrical Performance ....................................................................................................................... 4
3.3 Performance Curves ........................................................................................................................... 5
4 Package Specification ..................................................................................................................... 7
4.1 Package Outline Drawing ................................................................................................................... 7
MSC015SDA120B Datasheet Revision A
Zero Recovery Silicon Carbide Schottky Diode
1
Revision History
The revision history describes the changes that were implemented in the document. The changes are
listed by revision, starting with the most current publication.
1.1
Revision A
Revision A was published in May 2018. It is the first publication of this document.
MSC015SDA120B Datasheet Revision A
1
Zero Recovery Silicon Carbide Schottky Diode
2
Product Overview
This section shows the product overview for the MSC015SDA120B device.
2.1
Features
The following are key features of the MSC015SDA120B device:
Ultra-fast recovery times
Soft recovery characteristics
Low forward voltage
Low leakage current
Avalanche energy rated
RoHS compliant
2.2
Benefits
The following are benefits of the MSC015SDA120B device:
High switching frequency
Low switching losses
Low noise (EMI) switching
Higher reliability systems
Increased system power density
2.3
Applications
The MSC015SDA120B device is designed for the following applications:
Power Factor Correction (PFC )
Anti-parallel diode
Switch-mode power supply
Inverters/converters
Motor controllers
Freewheeling diode
Switch-mode power supply
Inverters/converters
Snubber/clamp diode
MSC015SDA120B Datasheet Revision A
2
Zero Recovery Silicon Carbide Schottky Diode
3
3.1
Electrical Specifications
This section shows the electrical specifications for the MSC015SDA120B device.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings for the MSC015SDA120B device. All ratings at
T
C
= 25 °C unless otherwise specified.
Table 1 • Absolute Maximum Ratings
Symbol
V
R
V
RRM
V
RWM
I
F
Parameter
Maximum DC reverse voltage
Maximum peak repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC forward current (T
C
= 25 °C)
Maximum DC forward current (T
C
= 135 °C)
Maximum DC forward current (T
C
= 145 °C)
I
FRM
I
FSM
P
tot
Repetitive peak forward surge current
(T
C
= 25 °C, t
p
= 8.3 ms, half sine wave)
Non-repetitive forward surge current
(T
C
= 25 °C, t
p
= 8.3 ms, half sine wave)
Power dissipation (T
C
= 25 °C)
Power dissipation (T
C
= 110 °C)
T
J
, T
STG
T
L
E
AS
Operating junction and storage temperature range
Lead temperature for 10 seconds
Single pulse avalanche energy
(starting T
J
= 25 °C, L = 0.89 mH, peak I
L
= 15 A)
Ratings
1200
1200
1200
39
17
14
55
109
167
72
–55 to 175
300
100
mJ
°C
W
A
Unit
V
The following table shows the thermal and mechanical characteristics of the MSC015SDA120B.
Table 2 • Thermal and Mechanical Characteristics
Symbol
R
θJC
W
T
Characteristic/Test Conditions
Junction-to-case thermal resistance
Package weight
Min
Typ
0.62
0.22
5.9
Mounting torque, 6-32 or M3 screw
10
1.1
Max
0.90
Unit
°C/W
oz
g
lbf-in
N-m
MSC015SDA120B Datasheet Revision A
3
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