E2H0093-15-90
¡ Semiconductor
¡ Semiconductor
MSC23409C/CL-xxDS9
DESCRIPTION
This version: Sep. 1995
MSC23409C/CL-xxDS9
4,194,304-Word
¥
9-Bit DRAM MODULE : FAST PAGE MODE TYPE
The OKI MSC23409C/CL-xxDS9 is a fully decoded 4,194,304-word
¥
9-bit CMOS Dynamic
Random Access Memory Module composed of nine 4-Mb DRAMs (4M
¥
1) in SOJ packages
mounted with nine decoupling capacitors on a 30-pin glass epoxy single-inline package. This
module is generally used for memory expansion in parity applications such as workstations. The
low-power version (CL) offers reduced power consumption for mobile computing applications
like laptops and palmtops.
FEATURES
• 4-Meg
¥
9-bit organization
• 30-Pin Socket Insertable Module
MSC23409C/CL-xxDS9 : Solder tab
• Single 5 V supply
±10%
tolerance
• Access times : 60, 70, 80 ns
• Input : TTL compatible
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms (128 ms : L-version)
•
CAS
before
RAS
refresh,
CAS
before
RAS
hidden refresh,
RAS-only
refresh capability
• Multi-bit test mode capability
• Fast Page Mode capability
PRODUCT FAMILY
Family
MSC23409C/CL-60DS9
MSC23409C/CL-70DS9
MSC23409C/CL-80DS9
Access Time (Max.)
t
RAC
60 ns
70 ns
80 ns
t
AA
30 ns
35 ns
40 ns
t
CAC
15 ns
20 ns
20 ns
Power Dissipation
Cycle Time
Operating (Max.) Standby (Max.)
(Min.)
110 ns
130 ns
150 ns
4950 mW
4455 mW
3960 mW
49.5 mW/
9.9 mW (L-version)
1/13
¡ Semiconductor
MSC23409C/CL-xxDS9
PIN CONFIGURATION
MSC23409C/CL-xxDS9
3.38 Tpy.
f
3.18
20.45 Max.
Typ.
10.16
Typ.
6.35
88.9 ±0.2
82.14 Typ.
*1
5.28 Max.
1
5.59 Typ.
2.54 ±0.1
73.66
1.78 Typ.
30
2.54 Min.
+0.1
1.27 –0.08
2.03 Typ.
*1 The common size difference of the board width 12.5 mm of its height is
specified as ±0.2. The value above 12.5 mm is specified as ±0.5.
Pin No.
1
2
3
4
5
6
7
8
9
10
Pin Name
V
CC
CAS
DQ0
A0
A1
DQ1
A2
A3
V
SS
DQ2
Pin No.
11
12
13
14
15
16
17
18
19
20
Pin Name
A4
A5
DQ3
A6
A7
DQ4
A8
A9
A10
DQ5
Pin No.
21
22
23
24
25
26
27
28
29
30
Pin Name
WE
V
SS
DQ6
NC
DQ7
Q8
RAS
CAS8
D8
V
CC
2/13
¡ Semiconductor
MSC23409C/CL-xxDS9
BLOCK DIAGRAM
A0 - A10
RAS0
CAS0
WE
A0 - A10
RAS
D
CAS
Q
WE
V
CC
V
SS
A0 - A10
RAS
D
CAS
Q
WE
V
CC
V
SS
A0 - A10
RAS
D
CAS
Q
WE
V
CC
V
SS
A0 - A10
RAS
D
CAS
Q
WE
V
CC
V
SS
DQ0
A0 - A10
RAS
D
CAS
Q
WE
V
CC
V
SS
A0 - A10
RAS
D
CAS
Q
WE
V
CC
V
SS
A0 - A10
RAS
D
CAS
Q
WE
V
CC
V
SS
A0 - A10
RAS
D
CAS
Q
WE
V
CC
V
SS
A0 - A10
RAS
D
CAS
Q
WE
V
CC
V
SS
DQ4
DQ1
DQ5
DQ2
DQ6
DQ3
DQ7
CAS8
D8
Q8
V
CC
V
SS
C1
C9
3/13
¡ Semiconductor
MSC23409C/CL-xxDS9
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Voltage V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D
T
opr
T
stg
Rating
–1.0 to 7.0
–1.0 to 7.0
50
9
0 to 70
–40 to 125
Unit
V
V
mA
W
°C
°C
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to the conditions as detailed in the
operational sections of this data sheet. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A10)
Input Capacitance (RAS,
CAS, WE)
I/O Capacitance (DQ0 - DQ7)
Input Capacitance (CAS8)
Input Capacitance (D8)
Output Capacitance (Q8)
Symbol
C
IN1
C
IN2
C
DQ
C
IN3
C
IN4
C
OUT
Typ.
—
—
—
—
—
—
Max.
64
73
19
13
12
13
(Ta = 25°C, f = 1 MHz)
Unit
pF
pF
pF
pF
pF
pF
Note : Capacitance measured with Boonton Meter.
4/13
¡ Semiconductor
DC Characteristics
MSC23409C/CL-xxDS9
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
MSC23409C/CL MSC23409C/CL MSC23409C/CL
Symbol
Parameter
Condition
0 V
£
V
I
£
6.5 V;
-60DS9
-70DS9
-80DS9
Unit Note
Min.
Input Leakage Current
I
LI
All other pins not
under test = 0 V
Output Leakage Current
Output High Voltage
Output Low Voltage
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
Average Power
Supply Current
(Battery Backup)
I
CC7
I
CC6
I
CC3
I
CC2
I
CC1
I
LO
V
OH
V
OL
D
OUT
disable
0 V
£
V
O
£
5.5 V
I
OH
= –5.0 mA
I
OL
= 4.2 mA
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
CAS
= V
IH
,
t
RC
= Min.
RAS
cycling,
CAS
before
RAS,
t
RC
= Min.
RAS
= V
IL
,
CAS
cycling,
t
PC
= Min.
t
RC
= 125 µs,
I
CC10
CAS
before
RAS
cycling
—
—
—
—
–10
2.4
0
—
—
—
—
–90
Max.
90
Min.
–90
Max.
90
Min.
–90
Max.
90
µA
10
V
CC
0.4
900
18
9
1.8
900
–10
2.4
0
—
—
—
—
—
10
V
CC
0.4
810
18
9
1.8
810
–10
2.4
0
—
—
—
—
—
10
V
CC
0.4
720
18
9
1.8
720
µA
V
V
mA 1, 2
mA
mA
1
1
mA 1, 5
mA 1, 2
900
—
810
—
720
mA 1, 2
720
—
630
—
540
mA 1, 3
2.7
—
2.7
—
2.7
mA
1, 2
4, 5
Notes: 1.
2.
3.
4.
5.
Specified values are obtained with the output open.
Address can be changed once or less while
RAS=V
IL
.
Address can be changed once or less while
CAS=V
IH
.
V
CC
- 0.2 V
≤
V
IH
≤
6.5 V, -1.0 V
≤
V
IL
≤
0.2 V.
L-version.
5/13
