This version:
Feb. 23. 1999
Semiconductor
MSC23B136D-xxBS4/DS4
1,048,576-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
DESCRIPTION
The MSC23B136D-xxBS4/DS4 is a fully decoded, 1,048,576-word x 36-bit CMOS dynamic random access memory
module composed of two 16Mb DRAMs in SOJ packages and two 2Mb DRAMs in SOJ packages mounted with four
decoupling capacitors on a 72-pin glass epoxy single-inline package. This module supports any application where
high density and large capacity of storage memory are required.
FEATURES
· 1,048,576-word x 36-bit organization
· 72-pin socket insertable module
MSC23B136D-xxBS4 : Gold tab
MSC23B136D-xxDS4 : Solder tab
· Single +5V supply ± 10% tolerance
· Input
: TTL compatible
· Output
: TTL compatible, 3-state
· Refresh : 1024cycles/16ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode capability
PRODUCT FAMILY
Access Time (Max.)
Family
t
RAC
MSC23B136D-60BS4/DS4
MSC23B136D-70BS4/DS4
60ns
70ns
t
AA
30ns
35ns
t
CAC
15ns
20ns
Cycle
Time
(Min.)
Operating(Max.)
Standby(Max.)
Power Dissipation
110ns
130ns
2255mW
22mW
2035mW
Semiconductor
MSC23B136D
MODULE OUTLINE
MSC23B136D-xxBS4/DS4
107.95±0.2
*1
101.19Typ.
(Unit : mm)
5.28Max.
3.38Typ.
3.18
19.0±0.2
Typ. Typ.
10.16 6.35
2.03Typ.
6.35Typ.
5.7Min.
1
1.27±0.1
R1.57
6.35
95.25
1.04Typ.
72
+0.1
1.27 -0.08
*1 The common size difference of the board width 12.5mm of its height is specified as ±0.2.
The value above 12.5mm is specified as ±0.5.
Semiconductor
MSC23B136D
PIN CONFIGURATION
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Pin Name
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
V
CC
NC
A0
A1
A2
A3
A4
A5
A6
Pin No.
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin Name
NC
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
NC
V
CC
A8
A9
NC
/RAS2
DQ26
DQ8
Pin No.
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
Pin Name
DQ17
DQ35
V
SS
/CAS0
/CAS2
/CAS3
/CAS1
/RAS0
NC
NC
/WE
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
Pin No.
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin Name
DQ12
DQ30
DQ13
DQ31
V
CC
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
V
SS
Presence Detect Pins
MSC23B136D
-60BS4/DS4
V
SS
V
SS
NC
NC
MSC23B136D
-70BS4/DS4
V
SS
V
SS
V
SS
NC
Pin No.
67
68
69
70
Pin Name
PD1
PD2
PD3
PD4
Semiconductor
MSC23B136D
BLOCK DIAGRAM
A0-A9
/CAS0
/CAS1
/WE
A0-A9
/RAS0
/RAS
/LCAS
/UCAS
/WE
/OE
V
SS
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
V
CC
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
A0-A9
/RAS
/CAS1
/CAS2
/WE
/OE
V
SS
DQ1
DQ2
DQ8
DQ17
V
CC
A0-A9
/RAS2
/RAS
/LCAS
/UCAS
/WE
/OE
V
SS
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
V
CC
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ27
DQ28
DQ29
DQ30
DQ31
DQ32
DQ33
DQ34
A0-A9
/RAS
/CAS1
/CAS2
/WE
/OE
V
SS
/CAS2
/CAS3
V
CC
C1-C4
V
SS
DQ1
DQ2
DQ26
DQ35
V
CC
Semiconductor
MSC23B136D
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
( Ta = 25°C )
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D
T
OPR
T
STG
Rating
-1.0 to +7.0
-1.0 to +7.0
50
4
0 to +70
-40 to +125
Unit
V
V
mA
W
°C
°C
Recommended Operating Conditions
( Ta = 0°C to +70°C )
Parameter
Power Supply Voltage
V
SS
Input High Voltage
Input Low Voltage
V
IH
V
IL
0
2.4
-1.0
0
-
-
0
6.5
0.8
V
V
V
Symbol
V
CC
Min.
4.5
Typ.
5.0
Max.
5.5
Unit
V
Capacitance
( V
CC
= 5V ± 10%, Ta = 25°C, f = 1 MHz )
Parameter
Input Capacitance (A0 - A9)
Input Capacitance (/WE)
Input Capacitance (/RAS0, /RAS2)
Input Capacitance (/CAS0- /CAS3)
I/O Capacitance (DQ0 - DQ35)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
Typ.
-
-
-
-
-
Max.
29
35
20
20
13
Unit
pF
pF
pF
pF
pF
Note:
Capacitance measured with Boonton Meter.
