ZOWIE
MSCD032H THRU MSCD036H
FEATURES
* Halogen-free type
Schottky Barrier Diode
(20V~60V / 300mA)
OUTLINE DIMENSIONS
Case : 0805
Unit : mm
* Compliance to RoHS product
*
*
*
*
Lead less chip form, no lead damage
Low power loss, High efficiency
High current capability, low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
2.00 ± 0.10
1.30 ± 0.10
Mounting Pad Layout
275
R 0.
0.90
MIN.
1.30
MAX.
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
0.45 ± 0.10
0.45 ± 0.10
1.00
Typ.
0.80
MIN.
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Laser Cathode band marking
Weight :
0.005 gram
Equivalent : SOD-323
MARKING
0.80
2.90
REF.
+ 0.2
- 0.1
C
2
.
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
5 reels per box
*
6 boxes per carton
Voltage class: 2 = 20V, 4 = 40V, 6 = 60V
Absolute Maximum Ratings (Ta = 25 C)
Rating
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Junction temperature
Operating temperature range
Storage temperature Range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
opr
T
STG
o
Conditions
MSCD032H
20
MSCD034H
40
300
MSCD036H
60
Unit
V
mA
A
o
o
o
8.3ms single half sine-wave
2.0
125
-40 to +125
- 40 to +125
C
C
C
Electrical characteristics (Ta = 25 C)
ITEM
Symbol
Conditions
I
F
= 100mA
I
F
= 300mA
Forward voltage
V
F
I
F
= 100mA
I
F
= 300mA
Type
MSCD032H
/
MSCD034H
MSCD036H
Min.
-
-
-
-
Typ.
0.42
0.47
0.45
0.60
Max.
-
0.50
Unit
V
-
0.65
Repetitive peak reverse current
I
RRM
V
R
= Max. V
RRM
, Ta = 25
o
C
-
8
50
uA
Junction capacitance
Thermal resistance
C
j
R
th(JA)
R
th(JL)
V
R
= 4V, f = 1.0 MHz
Junction to ambient
Junction to lead
-
-
-
30
160
110
-
-
-
o
o
pF
C/W
C/W
REV. 1
2013/05
ZOWIE
MSCD032H THRU MSCD036H
(20V~60V / 300mA)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
0.3
3
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
8.3ms Single Half Sine-Wave
(JEDEC Method)
AVERAGE FORWARD CURRENT, (A)
PEAK FORWARD SURGE CURRENT,
AMPERES
0.2
2
0.1
1
0
0
25
50
75
100
o
0
125
150
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, ( C)
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
IINSTANTANEOUS FORWARD CURRENT, (mA)
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
T
J
=100 C
o
100
10
10
1.0
T
J
=25 C
o
1.0
0.10
0.1
0.0
0.1
0.2
0.3
0.4
0.5
MSCD032H & MSCD034H
MSCD036H
0.01
0.8
0
20
40
60
80
100
0.6
0.7
FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
1000
JUCTION CAPACITANCE (pF)
100
10
1
0
5
10
15
20
REVERSE VOLTAGE, (V)
REV. 1
2013/05
微控制器 MCU
