SHANGHAI
MICROELECTRONICS CO., LTD.
August 2005
MSEMFxxxLC SERIES
Low Capacitance Quad Array for ESD Protection
General Description
This integrated transient voltage suppressor
device (TVS) is designed for applications requiring
transient overvoltage protection, printers, business
machines,
design
communication
very
systems,
and
medical
reliable
equipment, and other applications. Its integrated
provides
effective
protection for separate lines using only one
package. These devices are ideal for situations
where board space is at a premium.
Revision:B
Features
Four Separate Unidirectional Configurations for
Protection
Low Leakage Current < 1
μA
@ 3Volts
Power Dissipation: 380mW
Small SOT-553 SMT Package
Low Capacitance
Complies to USB 1.1 Low Speed & Speed
Specifications
These are Pb-Free Devices
Applications
Serial and Parallel Ports
Microprocessor Based Equipment
Notebooks, Desktops, Servers
Cellular and Portable Equipment
Complies with the following standards
IEC61000-4-2
Level 4
15 kV (air discharge)
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
Functional diagram
SOT-553
Maximum Ratings (T
A
=25°C)
Symbol
P
PK
P
D
R
θ
JA
T
Jmax
T
J
T
stg
T
L
Parameter
Peak Power Dissipation(8×20μs@T
A
=25℃)
Steady State Power-1 Diode
Thermal Resistance, Junction-to-Ambient
Above 25℃,
Derate
Maximum Junction Temperature
Operation Junction and Storage Temperature Range
Lead Solder Temperature(10 seconds duration)
Value
25
380
327
3.05
150
-55 to +150
260
Units
W
mW
℃/W
Mw/℃
℃
℃
℃
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
MSEMFxxxLC SERIES
Electrical Parameter
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @
V
RWM
Test Current
Breakdown Voltage @ I
T
Forward Current
Forward Voltage @ I
F
Electrical Characteristics
V
BR
Part Numbers
Min.
V
MSEMF3V3LC
MSEMF05LC
MSEMF12LC
1.
2.
5.3
6.1
11.4
Typ.
V
5.6
6.8
12
Max.
V
5.9
7.2
12.7
I
T
V
RWM
I
R
C
Typ.
0v
bias
mA
1
1
5
V
3.0
5.0
9.0
µA
1.0
1.0
1.0
pF
12
8
7
Non-repetitive current per Figure 1.
Only 1 diode under power. For 4 diodes under power
3.
Capacitance of one diode at f=1MHz,T
A
=25℃
Typical Characteristics
Figure 1 Pulse Width
Figure 2 Power Derating Curve
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
MSEMFxxxLC SERIES
Figure 3 Reverse Leakage versus temperature
Figure 4 Capacitance
Figure 5 8*20 Pulse Waveform
Figure 6 Forward Voltage
SOT-553 Mechanical Data
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
MSEMFxxxLC SERIES
DIM
MIN
A
b
c
D
E
e
L
H
E
0.10
1.50
0.50
0.17
0.08
1.50
1.10
MILLIMETERS
NOM
0.55
0.22
0.13
1.60
1.20
0.50BSC
0.20
1.60
0.30
1.70
0.004
0.059
MAX
0.60
0.27
0.18
1.70
1.30
MIN
0.020
0.007
0.003
0.059
0.043
INCHES
NOM
0.022
0.009
0.005
0.063
0.047
0.020BSC
0.008
0.063
0.012
0.067
MAX
0.024
0.011
0.007
0.067
0.051
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
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