MSF12N65
650V N-Channel MOSFET
Description
The MSF12N65 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
•
Low gate charge ( typical 52nC)
•
High ruggedness
•
Fast switching
•
100% avalanche tested
•
Improved dv/dt capability
•
RoHS compliant package
Application
•
Power Factor Correction
•
LCD TV Power
•
Full and Half Bridge Power
Packing & Order Information
50/Tube ; 1,000/Bo
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
V
DS
V
GS
I
D
I
DM
E
AS
E
AR
dV/dt
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
Drain Current Pulsed
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dV/dt
Power Dissipation (TC = 25 °C)
Power Dissipation (TC=100°C)
Value
650
±30
12
7.4
48
865
23.1
4.5
54
0.43
Unit
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
• Drain current limited by maximum junction temperature
Publication Order Number: [MSF12N60]
©
Bruckewell Technology Corporation Rev. A -2014
MSF12N65
650V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
T
J
,T
STG
NOTE:
1. Repetitive rating; pulse width limited by maximum junction temperature.
On Characteristics
Symbol
Parameter
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Operating and Storage Temperature Range
Value
-55 to +150
Unit
°C
Test Conditions
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V,I
D
=3A
Min
3.0
--
Typ.
--
1.95
Max.
5.0
2.4
Units
V
Ω
Off Characteristics
Symbol
Parameter
V
GS
R
DS(ON)
BV
DSS
△BV
DSS
/△T
J
I
DSS
I
GSSF
I
GSSR
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Test Conditions
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V,I
D
=3A
V
GS
=0 V , I
D
=250μA
I
D
=250μA, Referenced
to 25°C
V
DS
=600V , V
GS
= 0 V
V
DS
=480V , T
C
= 125°C
V
GS
=30V , V
DS
=0 V
V
GS
=-30V , V
DS
=0 V
Min
2.0
--
600
--
--
--
--
Typ.
--
0.58
--
0.5
--
--
--
Max.
4.0
0.65
--
--
1
10
100
-100
Units
V
Ω
V
V/°C
μA
nA
nA
Dynamic Characteristics
Symbol
Parameter
C
ISS
C
OSS
C
RSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
DS
=25V, V
GS
=0V,
f=1.0MHz
Min
--
--
--
Typ.
1760
182
21
Max.
2290
235
28
Units
pF
pF
pF
Dynamic Characteristics
Symbol
Parameter
t
d(on)
t
r
t
d(off)
tf
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
Min
--
Typ.
30
85
140
90
48
8.5
21
Max.
70
180
280
190
63
--
--
Units
ns
ns
ns
ns
nC
nC
nC
V
DS
=250 V, I
D
=12A,
R
G
=10Ω
--
--
--
--
V
DS
=480V,I
D
=12A,
V
GS
=10 V
--
--
Publication Order Number: [MSF12N60]
©
Bruckewell Technology Corporation Rev. A -2014
MSF12N65
650V N-Channel MOSFET
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=12A , V
GS
= 0V
I
S
=12A , V
GS
= 0V
diF/dt=100A/μs
Min
--
--
--
--
--
Typ.
--
--
--
460
4.9
Max.
12
A
48
1.5
--
--
V
ns
μC
Units
Publication Order Number: [MSF12N60]
©
Bruckewell Technology Corporation Rev. A -2014
MSF12N65
650V N-Channel MOSFET
■Characteristics
Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
CURRENT AND GATE VOLTAGE
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF12N60]
©
Bruckewell Technology Corporation Rev. A -2014
MSF12N65
650V N-Channel MOSFET
■Characteristics
Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF12N60]
©
Bruckewell Technology Corporation Rev. A -2014
