E2G0106-18-42
¡ Semiconductor
MSM5116400C
¡ Semiconductor
This version: Apr. 1998
MSM5116400C
Pr
el
im
in
ar
y
4,194,304-Word
¥
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM5116400C is a 4,194,304-word
¥
4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM5116400C achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5116400C is available in a 26/24-pin plastic SOJ or 26/24-pin plastic
TSOP.
FEATURES
• 4,194,304-word
¥
4-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 4096 cycles/64 ms
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Multi-bit test mode capability
• Package options:
26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM5116400C-xxSJ)
26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM5116400C-xxTS-K)
(TSOPII26/24-P-300-1.27-L) (Product : MSM5116400C-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM5116400C-50
MSM5116400C-60
MSM5116400C-70
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
50 ns 25 ns 13 ns 13 ns
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
110 ns
130 ns
550 mW
495 mW
440 mW
5.5 mW
1/17
,
¡ Semiconductor
MSM5116400C
PIN CONFIGURATION (TOP VIEW)
V
CC
1
26 V
SS
V
CC
1
26 V
SS
V
SS
26
1 V
CC
DQ1 2
25 DQ4
23
CAS
22
OE
DQ1 2
DQ2 3
WE
4
25 DQ4
DQ4 25
CAS
23
OE
22
A9 21
A8 19
2 DQ1
DQ2 3
24 DQ3
24 DQ3
23
CAS
22
OE
21 A9
19 A8
DQ3 24
3 DQ2
4
WE
5
RAS
6 A11R
8 A10R
WE
4
RAS
5
RAS
5
A11R 6
A10R 8
21 A9
19 A8
A11R 6
A10R 8
A0 9
A0 9
18 A7
17 A6
16 A5
15 A4
18 A7
17 A6
16 A5
15 A4
A7 18
A6 17
A5 16
A4 15
9 A0
A1 10
A2 11
A3 12
A1 10
A2 11
A3 12
10 A1
11 A2
12 A3
V
CC
13
14 V
SS
V
CC
13
14 V
SS
V
SS
14
13 V
CC
26/24-Pin Plastic SOJ
26/24-Pin Plastic TSOP
(K Type)
26/24-Pin Plastic TSOP
(L Type)
Pin Name
A0 - A9,
A10R, A11R
RAS
CAS
DQ1 - DQ4
OE
WE
V
CC
V
SS
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5 V)
Ground (0 V)
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/17
¡ Semiconductor
MSM5116400C
BLOCK DIAGRAM
Timing
Generator
Timing
Generator
RAS
CAS
10
Column
Address
Buffers
Internal
Address
Counter
10
Column
Decoders
Write
Clock
Generator
WE
OE
4
Output
Buffers
4
4
A0 - A9
Refresh
Control Clock
Sense
Amplifiers
4
I/O
Selector
4
4
DQ1 - DQ4
Input
Buffers
4
10
A10R, A11R
V
CC
2
Row
Address
Buffers
12
Row
De-
coders
Word
Drivers
Memory
Cells
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
3/17
¡ Semiconductor
MSM5116400C
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to V
CC
+ 0.5
–0.5 to 7
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–0.5
*2
Typ.
5.0
0
—
—
Max.
5.5
0
V
CC
+
0.5
*1
0.8
Unit
V
V
V
V
Notes : *1. The input voltage is V
CC
+ 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
– 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
SS
is applied).
Capacitance
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance
(A0 - A9, A10R, A11R)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
Max.
5
7
7
Unit
pF
pF
pF
4/17
¡ Semiconductor
DC Characteristics
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Condition
MSM5116400C
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Symbol
MSM5116400 MSM5116400 MSM5116400
C-50
C-60
C-70
Unit Note
Min.
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
V
V
mA
2.4
0
–10
V
OH
I
OH
= –5.0 mA
V
OL
I
OL
= 4.2 mA
0 V
£
V
I
£
6.5 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
V
CC
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
PC
= Min.
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
I
LO
–10
10
–10
10
–10
10
mA
I
CC1
—
—
—
100
2
1
—
—
—
90
2
1
—
—
—
80
2
mA
1, 2
I
CC2
mA
1
1
—
100
—
90
—
80
mA
1, 2
—
5
—
5
—
5
mA
1
—
100
—
90
—
80
mA
1, 2
—
90
—
80
—
70
mA
1, 3
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
5/17
