E2G0055-17-41
¡ Semiconductor
MSM5118165B
¡ Semiconductor
This version: Jan. 1998
MSM5118165B
Previous version: May 1997
1,048,576-Word
¥
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM5118165B is a 1,048,576-word
¥
16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM5118165B achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5118165B is available in a 42-pin plastic SOJ or 50/44-pin plastic
TSOP.
FEATURES
• 1,048,576-word
¥
16-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms
• Fast page mode with EDO, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
42-pin 400 mil plastic SOJ
(SOJ42-P-400-1.27)
(Product : MSM5118165B-xxJS)
50/44-pin 400 mil plastic TSOP (TSOPII50/44-P-400-0.80-K) (Product : MSM5118165B-xxTS-K)
(TSOPII50/44-P-400-0.80-L) (Product : MSM5118165B-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM5118165B-50
MSM5118165B-60
MSM5118165B-70
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
50 ns 25 ns 13 ns 13 ns
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
110 ns
130 ns
990 mW
880 mW
770 mW
5.5 mW
1/16
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
NC 12
WE
13
RAS
14
NC 15
NC 16
A0 17
A1 18
A2 19
A3 20
V
CC
21
42 V
SS
V
CC
1
MSM5118165B
50 V
SS
V
SS
50
1 V
CC
41 DQ16
40 DQ15
39 DQ14
38 DQ13
37 V
SS
36 DQ12
35 DQ11
34 DQ10
33 DQ9
32 NC
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
49 DQ16 DQ16 49
48 DQ15 DQ15 48
47 DQ14 DQ14 47
46 DQ13 DQ13 46
45 V
SS
V
SS
45
44 DQ12 DQ12 44
43 DQ11 DQ11 43
42 DQ10 DQ10 42
41 DQ9
40 NC
DQ9 41
NC 40
2 DQ1
3 DQ2
4 DQ3
5 DQ4
6 V
CC
7 DQ5
8 DQ6
9 DQ7
DQ8 10
NC 11
10 DQ8
11 NC
31
LCAS
29
OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 V
SS
NC 15
NC 16
WE
17
RAS
18
NC 19
NC 20
A0 21
A1 22
A2 23
A3 24
V
CC
25
36 NC
35
LCAS
33
OE
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 V
SS
NC 36
LCAS
35
OE
33
A9 32
A8 31
A7 30
A6 29
A5 28
A4 27
V
SS
26
15 NC
16 NC
17
WE
18
RAS
19 NC
20 NC
21 A0
22 A1
23 A2
24 A3
25 V
CC
30
UCAS
34
UCAS UCAS
34
42-Pin Plastic SOJ
50/44-Pin Plastic TSOP
(K Type)
50/44-Pin Plastic TSOP
(L Type)
Pin Name
A0 - A9
RAS
LCAS
UCAS
DQ1 - DQ16
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5 V)
Ground (0 V)
No Connection
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/16
¡ Semiconductor
MSM5118165B
BLOCK DIAGRAM
WE
RAS
LCAS
UCAS
Column
Address
Buffers
Internal
Address
Counter
Row
Address
10
Buffers
Timing
Generator
I/O
Controller
I/O
Controller
10
10
8
OE
Output
Buffers
8
DQ1 - DQ8
8
Column Decoders
Input
Buffers
8
A0
-
A9
Refresh
Control Clock
Sense Amplifiers
16
I/O
Selector
16
8
10
Input
Buffers
8
Row
Deco-
ders
Word
Drivers
Memory
Cells
8
DQ9 - DQ16
Output
Buffers
8
V
CC
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
LCAS
*
H
L
H
L
L
H
L
L
UCAS
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don't Care
D
IN
High-Z
DQ Pin
DQ1 - DQ8
DQ9 - DQ16
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don't Care
D
IN
D
IN
High-Z
Function Mode
Standby
Refresh
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
—
*: "H" or "L"
3/16
¡ Semiconductor
MSM5118165B
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to V
CC
+ 0.5
–0.5 to 7
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–0.5
*2
Typ.
5.0
0
—
—
Max.
5.5
0
V
CC
+ 0.5
*1
0.8
Unit
V
V
V
V
Notes : *1. The input voltage is V
CC
+ 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
– 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
SS
is applied).
Capacitance
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 - A9)
Input Capacitance
(RAS,
LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
Max.
5
7
7
Unit
pF
pF
pF
4/16
¡ Semiconductor
DC Characteristics
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
MSM5118165B
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Condition
MSM5118165 MSM5118165 MSM5118165
B-50
B-60
B-70
Unit Note
Min.
V
OH
I
OH
= –5.0 mA
V
OL
I
OL
= 4.2 mA
0 V
£
V
I
£
6.5 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
5.5 V
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
HPC
= Min.
—
170
—
150
—
130
mA
1, 3
—
180
—
160
—
140
mA
1, 2
—
5
—
5
—
5
mA
1
—
180
—
160
—
140
mA
1, 2
–10
10
–10
10
–10
10
mA
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
V
V
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
I
LO
–10
10
–10
10
–10
10
mA
I
CC1
—
—
—
180
2
1
—
—
—
160
2
1
—
—
—
140
2
mA
1, 2
I
CC2
mA
1
1
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
5/16
