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MSM5118165F-50TS-K

EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 400 MIL, 0.80 MM PITCH, PLASTIC, TSOPII-50/44

器件类别:存储    存储   

厂商名称:LAPIS Semiconductor Co Ltd

器件标准:

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
符合
厂商名称
LAPIS Semiconductor Co Ltd
零件包装代码
TSOP2
包装说明
SOP, TSOP44/50,.46,32
针数
50/44
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE WITH EDO
最长访问时间
50 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型
COMMON
JESD-30 代码
R-PDSO-G44
JESD-609代码
e0
内存密度
16777216 bit
内存集成电路类型
EDO DRAM
内存宽度
16
功能数量
1
端口数量
1
端子数量
44
字数
1048576 words
字数代码
1000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
TSOP44/50,.46,32
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
5 V
认证状态
Not Qualified
刷新周期
1024
自我刷新
NO
最大待机电流
0.001 A
最大压摆率
0.135 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
TIN LEAD
端子形式
GULL WING
端子节距
0.8 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
FEDD5118165F-02
Issue Date: Mar. 23, 2010
MSM5118165F
1,048,576-Word
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM5118165F is a 1,048,576-word
16-bit dynamic RAM fabricated in LAPIS Semiconductor’s
silicon-gate CMOS technology. The MSM5118165F achieves high integration, high-speed operation,
and low-power consumption because LAPIS Semiconductor manufactures the device in a
quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5118165F is available in a
42-pin plastic SOJ or 50/44-pin plastic TSOP.
FEATURES
·
1,048,576-word
16-bit configuration
·
Single 5V power supply,
10%
tolerance
·
Input : TTL compatible, low input capacitance
·
Output : TTL compatible, 3-state
·
Refresh : 1024 cycles/16ms
·
Fast page mode with EDO, read modify write capability
·
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
· Packages
42-pin 400mil plastic SOJ
(
SOJ42-P-400-1.27
)
(Product : MSM5118165F-xxJS)
50/44-pin 400mil plastic TSOP
(
TSOPII50/44-P-400-0.80-K
)
(Product : MSM5118165F-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
t
RAC
50ns
60ns
70ns
t
AA
25ns
30ns
35ns
t
CAC
13ns
15ns
20ns
t
OEA
13ns
15ns
20ns
Cycle Time
(Min.)
84ns
104ns
124ns
Power Dissipation
Operating
(Max.)
743mW
688mW
633mW
Standby
(Max.)
5.5mW
MSM5118165F
1/16
FEDD5118165F-02
MSM5118165F
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1
2
DQ2
3
DQ3
4
DQ4
5
V
C
6
DQ5 7
DQ6
8
DQ7
9
DQ8
10
NC
11
NC
12
WE
13
RAS
14
NC
15
NC
16
A0
17
A1
18
A2
19
A3
20
V
CC
21
42-Pin Plastic
SOJ
V
SS
DQ16
DQ15
DQ14
DQ13
V
S
DQ12
DQ11
DQ10
DQ9
NC
LCAS
UCAS
OE
A9
A8
26
A7
25
A6
24
A5
23
A4
22
V
SS
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
V
CC
1
DQ1
2
DQ2
3
DQ3 4
DQ4 5
V
C
6
DQ5 7
DQ6 8
DQ7 9
DQ8
10
NC
11
50
49
48
47
46
45
44
43
42
41
40
V
SS
DQ16
DQ15
DQ14
DQ13
V
S
DQ12
DQ11
DQ10
DQ9
NC
NC
15
NC
16
WE
17
RAS
18
NC
19
NC
20
A0
21
A1
22
A2
23
A3
24
V
CC
25
36
35
34
33
32
31
30
29
28
27
26
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
50/44-Pin Plastic TSOP
(K Type)
Pin Name
A0–A9
RAS
LCAS
UCAS
DQ1–DQ16
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5V)
Ground (0V)
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same GND voltage level must
be provided to every V
SS
pin.
2/16
FEDD5118165F-02
MSM5118165F
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
LCAS
*
H
L
H
L
L
H
L
L
UCAS
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
DQ Pin
DQ1-DQ8
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don’t Care
D
IN
High-Z
DQ9-DQ16
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don’t Care
D
IN
D
IN
High-Z
Standby
Refresh
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Function Mode
* : “H” or “L”
3/16
FEDD5118165F-02
MSM5118165F
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on Any Pin Relative to V
SS
Voltage V
CC
Supply relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
Value
–0.5 to V
CC
+ 0.5
–0.5 to 7
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
0.5
*2
Typ.
5.0
0
Max.
5.5
0
V
CC
+ 0.5
0.8
*1
Unit
V
V
V
V
Notes: *1. The input voltage is V
CC
+ 2.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which V
CC
is applied).
*2. The input voltage is V
SS
2.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which V
SS
is applied).
PIN CAPACITANCE
(Vcc = 5V
10%, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 - A9)
Input Capacitance
(RAS,
LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
C
IN1
C
IN2
C
I/O
Min.
Max.
5
7
7
Unit
pF
pF
pF
4/16
FEDD5118165F-02
MSM5118165F
DC CHARACTERISTICS
(V
CC
= 5V
10%, Ta = 0 to 70°C)
Parameter
Condition
MSM5118165
F-50
Min.
Output High Voltage
Output Low Voltage
Input Leakage
Current
Output Leakage
Current
Average Power
Supply Current
(Operating)
Power Supply
Current
(Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current
(Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
V
OH
V
OL
I
LI
I
OH
=
5.0mA
I
OL
= 4.2mA
0V
V
I
6.5V;
All other pins not
under test = 0V
DQ disable
0V
V
O
V
CC
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
V
CC
0.2V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
RAS
= cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
HPC
= Min.
120
110
100
mA
1,3
5
5
5
mA
1
135
125
115
mA
1,2
10
10
10
10
10
10
A
2.4
0
Max.
V
CC
0.4
MSM5118165
F-60
Min.
2.4
0
Max.
V
CC
0.4
MSM5118165
F-70
Unit Note
Min.
2.4
0
Max.
V
CC
0.4
V
V
Symbol
I
LO
10
10
10
10
10
10
A
I
CC1
135
125
115
mA
1,2
2
1
2
1
2
1
mA
1
I
CC6
135
125
115
mA
1,2
Notes: 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
5/16
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参数对比
与MSM5118165F-50TS-K相近的元器件有:CR0402-16W-1581FPT-13、MSM5118165F-60TS-K、MSM5118165F-70TS-K、MSM5118165F-60JS、MSM5118165F-50JS。描述及对比如下:
型号 MSM5118165F-50TS-K CR0402-16W-1581FPT-13 MSM5118165F-60TS-K MSM5118165F-70TS-K MSM5118165F-60JS MSM5118165F-50JS
描述 EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 400 MIL, 0.80 MM PITCH, PLASTIC, TSOPII-50/44 Fixed Resistor, Metal Glaze/thick Film, 0.063W, 1580ohm, 50V, 1% +/-Tol, 200ppm/Cel, Surface Mount, 0402, CHIP, ROHS COMPLIANT EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 400 MIL, 0.80 MM PITCH, PLASTIC, TSOPII-50/44 EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 400 MIL, 0.80 MM PITCH, PLASTIC, TSOPII-50/44 EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 400 MIL, 1.27 MM PITCH, PLASTIC, SOJ-42 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 400 MIL, 1.27 MM PITCH, PLASTIC, SOJ-42
包装说明 SOP, TSOP44/50,.46,32 CHIP, ROHS COMPLIANT SOP, TSOP44/50,.46,32 SOP, TSOP44/50,.46,32 SOJ, SOJ42,.44 SOJ, SOJ42,.44
Reach Compliance Code unknown compliant unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
端子数量 44 2 44 44 42 42
最高工作温度 70 °C 155 °C 70 °C 70 °C 70 °C 70 °C
封装形状 RECTANGULAR RECTANGULAR PACKAGE RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMT SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
表面贴装 YES YES YES YES YES YES
技术 CMOS METAL GLAZE/THICK FILM CMOS CMOS CMOS CMOS
是否无铅 含铅 不含铅 含铅 含铅 - 含铅
是否Rohs认证 符合 符合 不符合 不符合 - 不符合
厂商名称 LAPIS Semiconductor Co Ltd - LAPIS Semiconductor Co Ltd - LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd
零件包装代码 TSOP2 - TSOP2 TSOP2 SOJ SOJ
针数 50/44 - 50/44 50/44 42 42
访问模式 FAST PAGE WITH EDO - FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
最长访问时间 50 ns - 60 ns 70 ns 60 ns 50 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH - RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型 COMMON - COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-G44 - R-PDSO-G44 R-PDSO-G44 R-PDSO-J42 R-PDSO-J42
JESD-609代码 e0 e4 e0 e0 - e0
内存密度 16777216 bit - 16777216 bit 16777216 bit 16777216 bit 16777216 bit
内存集成电路类型 EDO DRAM - EDO DRAM EDO DRAM EDO DRAM EDO DRAM
内存宽度 16 - 16 16 16 16
功能数量 1 - 1 1 1 1
端口数量 1 - 1 1 1 1
字数 1048576 words - 1048576 words 1048576 words 1048576 words 1048576 words
字数代码 1000000 - 1000000 1000000 1000000 1000000
工作模式 ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
组织 1MX16 - 1MX16 1MX16 1MX16 1MX16
输出特性 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP - SOP SOP SOJ SOJ
封装等效代码 TSOP44/50,.46,32 - TSOP44/50,.46,32 TSOP44/50,.46,32 SOJ42,.44 SOJ42,.44
峰值回流温度(摄氏度) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
电源 5 V - 5 V 5 V 5 V 5 V
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 1024 - 1024 1024 1024 1024
自我刷新 NO - NO NO NO NO
最大待机电流 0.001 A - 0.001 A 0.001 A 0.001 A 0.001 A
最大压摆率 0.135 mA - 0.125 mA 0.115 mA 0.125 mA 0.135 mA
最大供电电压 (Vsup) 5.5 V - 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V - 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V - 5 V 5 V 5 V 5 V
温度等级 COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 TIN LEAD PALLADIUM SILVER Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
端子形式 GULL WING - GULL WING GULL WING J BEND J BEND
端子节距 0.8 mm - 0.8 mm 0.8 mm 1.27 mm 1.27 mm
端子位置 DUAL - DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
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