Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
E2G0019-17-41
¡ Semiconductor
MSM512800C
¡ Semiconductor
This version: Jan. 1998
MSM512800C
Previous version: May 1997
262,144-Word
¥
8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM512800C is a 262,144-word
¥
8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM512800C achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM512800C is available in a 26/24-pin plastic SOJ or 26/24-pin plastic
TSOP.
FEATURES
• 262,144-word
¥
8-bit configuration
• Single 5 V power supply,
±5%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 512 cycles/8 ms
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM512800C-xxJS)
26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM512800C-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM512800C-40
MSM512800C-45
MSM512800C-50
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
40 ns 20 ns 10 ns 10 ns
45 ns 24 ns 14 ns 14 ns
50 ns 26 ns 14 ns 14 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
80 ns
90 ns
100 ns
735 mW
630 mW
577.5 mW
5.25 mW
1/16
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
V
SS
1
26 V
SS
V
SS
1
26 V
SS
DQ1 2
DQ3 4
DQ4 5
WE
6
25 DQ8
DQ1 2
DQ2 3
DQ3 4
DQ4 5
25 DQ8
DQ2 3
24 DQ7
23 DQ6
22 DQ5
24 DQ7
23 DQ6
22 DQ5
21
CAS
19
OE
21
CAS
19
OE
18 A8
17 A7
16 A6
15 A5
14 A4
WE
6
RAS
8
A0 9
RAS
8
A0 9
18 A8
17 A7
16 A6
15 A5
14 A4
A1 10
A2 11
A3 12
V
CC
13
A1 10
A2 11
A3 12
V
CC
13
26/24-Pin Plastic SOJ
26/24-Pin Plastic TSOP
(K Type)
Pin Name
A0 - A8
RAS
CAS
DQ1 - DQ8
OE
WE
V
CC
V
SS
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5 V)
Ground (0 V)
MSM512800C
Note:
The same GND voltage level must be provided to every V
SS
pin.
2/16
¡ Semiconductor
MSM512800C
BLOCK DIAGRAM
RAS
CAS
Timing
Generator
Timing
Generator
9
Column
Address
Buffers
9
Column
Decoders
Write
Clock
Generator
WE
OE
8
A0 - A8
Internal
Address
Counter
Output
Buffers
8
8
Refresh
Control Clock
Sense
Amplifiers
8
I/O
Selector
8
8
DQ1 - DQ8
Input
Buffers
8
9
Row
Address
Buffers
9
Row
De-
coders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
V
SS
3/16
¡ Semiconductor
MSM512800C
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.75
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.25
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A8)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ8)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 5 V ±5%, Ta = 25°C, f = 1 MHz)
Max.
6
7
7
Unit
pF
pF
pF
4/16