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MSM514102DL-80ZS

描述:
Static Column DRAM, 4MX1, 80ns, CMOS, PZIP20
分类:
存储    存储   
文件大小:
342KB,共19页
制造商:
概述
Static Column DRAM, 4MX1, 80ns, CMOS, PZIP20
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
包装说明
ZIP, ZIP20,.1
Reach Compliance Code
unknown
最长访问时间
80 ns
I/O 类型
SEPARATE
JESD-30 代码
R-PZIP-T20
JESD-609代码
e0
内存密度
4194304 bit
内存集成电路类型
STATIC COLUMN DRAM
内存宽度
1
端子数量
20
字数
4194304 words
字数代码
4000000
最高工作温度
70 °C
最低工作温度
组织
4MX1
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
ZIP
封装等效代码
ZIP20,.1
封装形状
RECTANGULAR
封装形式
IN-LINE
电源
5 V
认证状态
Not Qualified
刷新周期
1024
最大待机电流
0.0002 A
最大压摆率
0.07 mA
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
1.27 mm
端子位置
ZIG-ZAG
文档预览
Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
E2G0149-29-41
¡ Semiconductor
MSM514102D/DL
¡ Semiconductor
This version: Apr. 1999
MSM514102D/DL
4,194,304-Word
¥
1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE
DESCRIPTION
The MSM514102D/DL is a 4,194,304-word
¥
1-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM514102D/DL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
single-layer metal CMOS process. The MSM514102D/DL is available in a 26/20-pin plastic SOJ, 20-
pin plastic ZIP, or 26/20-pin plastic TSOP. The MSM514102DL (the low-power version) is specially
designed for lower-power applications.
FEATURES
• 4,194,304-word
¥
1-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
• Static Column mode, read modify write capability
CS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Multi-bit test mode capability
• Package options:
26/20-pin 300 mil plastic SOJ
(SOJ26/20-P-300-1.27)
(Product : MSM514102D/DL-xxSJ)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM514102D/DL-xxZS)
26/20-pin 300 mil plastic TSOP
(TSOPII26/20-P-300-1.27-K) (Product : MSM514102D/DL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514102D/DL-60
MSM514102D/DL-70
MSM514102D/DL-80
Access Time (Max.)
t
RAC
60 ns
70 ns
80 ns
t
AA
30 ns
35 ns
40 ns
t
CAC
15 ns
20 ns
20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
110 ns
130 ns
150 ns
495 mW
440 mW
385 mW
5.5 mW/
1.1 mW (L-version)
1/17
¡ Semiconductor
MSM514102D/DL
 
PIN CONFIGURATION (TOP VIEW)
D
IN
1
26 V
SS
24
CS
22 A9
18 A8
17 A7
16 A6
15 A5
14 A4
A9 1
WE
2
NC 4
25 D
OUT
23 NC
D
OUT
3
D
IN
5
NC 9
RAS
7
2
CS
D
IN
1
RAS
3
A10 5
A0 9
4 V
SS
6
WE
WE
2
NC 4
RAS
3
8 A10
A0 11
A2 13
A5 17
A7 19
10 NC
12 A1
14 A3
16 A4
18 A6
20 A8
A10 5
A0 9
A1 10
A2 11
A3 12
V
CC
15
A1 10
A2 11
A3 12
V
CC
13
V
CC
13
26/20-Pin Plastic SOJ
20-Pin Plastic ZIP
26/20-Pin Plastic TSOP
(K Type)
Pin Name
A0 - A10
RAS
CS
D
IN
D
OUT
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Chip Select Input
Data Input
Data Output
Write Enable
Power Supply (5 V)
Ground (0 V)
No Connection
26 V
SS
24
CS
23 NC
22 A9
18 A8
17 A7
16 A6
15 A5
14 A4
25 D
OUT
2/17
¡ Semiconductor
MSM514102D/DL
BLOCK DIAGRAM
RAS
CS
Timing
Generator
Timing
Generator
11
Column
Address
Buffers
11
Column
Decoders
Write
Clock
Generator
WE
A0 - A10
Internal
Address
Counter
Refresh
Control Clock
Sense
Amplifiers
I/O
Selector
Output
Buffer
D
OUT
11
Row
Address
Buffers
11
Row
De-
coders
Word
Drivers
Memory
Cells
Input
Buffer
D
IN
V
CC
On Chip
V
BB
Generator
V
SS
3/17
¡ Semiconductor
MSM514102D/DL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A10, D
IN
)
Input Capacitance (RAS,
CS, WE)
Output Capacitance (D
OUT
)
Symbol
C
IN1
C
IN2
C
OUT
Typ.
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Max.
6
7
7
Unit
pF
pF
pF
4/17
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