E2L0013-17-Y1
¡ Semiconductor
¡ Semiconductor
MSM514262
262,144-Word
¥
4-Bit Multiport DRAM
This version: Jan. 1998
MSM514262
Previous version: Dec. 1996
DESCRIPTION
The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit
dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and
asynchronously.
The MSM514262 supports three types of operation : random access to RAM port, high speed
serial access to SAM port and bidirectional transfer of data between any selected row in the
RAM port and the SAM port. In addition to the conventional multiport DRAM operating
modes, the MSM514262 features the block write and flash write functions on the RAM port and
a split data transfer capability on the SAM port. The SAM port requires no refresh operation
because it uses static CMOS flip-flops.
FEATURES
• Single power supply: 5 V
±10%
• Full TTL compatibility
• Multiport organization
RAM: 256K word
¥
4 bits
SAM: 512 word
¥
4 bits
• Fast page mode
• Write per bit
• Masked flash write
• Masked block write
•
RAS
only refresh
•
CAS
before
RAS
refresh
• Hidden refresh
• Serial read/write
• 512 tap location
• Bidirectional data transfer
• Split transfer
• Masked write transfer
• Refresh: 512 cycles/8 ms
• Package options:
28-pin 400 mil plastic ZIP (ZIP28-P-400-1.27)
28-pin 400 mil plastic SOJ (SOJ28-P-400-1.27)
(Product : MSM514262-xxZS)
(Product : MSM514262-xxJS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514262-70
MSM514262-80
MSM514262-10
Access Time
RAM
70 ns
80 ns
100 ns
SAM
25 ns
25 ns
25 ns
Cycle Time
RAM
140 ns
150 ns
180 ns
SAM
30 ns
30 ns
30 ns
Power Dissipation
Operating
120 mA
110 mA
100 mA
Standby
8 mA
8 mA
8 mA
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¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
DSF
W4/IO4
SIO3
V
SS
SIO1
1
3
5
7
9
2
4
6
8
W3/IO3
SE
SIO4
SC
10 SIO2
DT/OE
11
W2/IO2 13
NC 15
A8 17
A5 19
V
CC
21
A3 23
A1 25
QSF 27
12 W1/IO1
14
WB/WE
16
RAS
18 A6
20 A4
22 A7
24 A2
26 A0
28
CAS
SC 1
28 V
SS
SIO1 2
27 SIO4
SIO2 3
26 SIO3
25
SE
DT/OE
4
W1/IO1 5
W2/IO2 6
WB/WE
7
NC 8
RAS
9
24 W4/IO4
23 W3/IO3
22 DSF
20 QSF
19 A0
18 A1
17 A2
16 A3
15 A7
21
CAS
A8 10
A6 11
A5 12
A4 13
V
CC
14
28-Pin Plastic SOJ
MSM514262
28-Pin Plastic ZIP
Pin Name
A0 - A8
RAS
CAS
DT/OE
WB/WE
DSF
W1/IO1 - W4/IO4
SC
SE
SIO1 - SIO4
QSF
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Transfer/Output Enable
Mask/Write Enable
Special Function Input
RAM Inputs/Outputs
Serial Clock
SAM Port Enable
SAM Inputs/Ourputs
Special Function Output
Power Supply (5 V)
Ground (0 V)
No Connection
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¡ Semiconductor
BLOCK DIAGRAM
Column
Address
Buffer
Column Decoder
Sense Amp.
Block Write
Control
I/O Control
Column Mask
Register
Color Register
Mask Register
RAM Input
Buffer
W1/IO1
- W4/IO4
RAM Output
Buffer
Row Decoder
Row
Address
Buffer
A0 - A8
Refresh
Counter
512
¥
512
¥
4
RAM ARRAY
Flash Write
Control
SAM Input
Buffer
SAM Output
Buffer
Gate
SAM
Gate
SAM
SIO1
- SIO4
Timing
Generator
RAS
CAS
DT/OE
WB/WE
DSF
SC
SE
V
CC
V
SS
Serial Decoder
SAM
Address
Buffer
SAM Address
Counter
QSF
MSM514262
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¡ Semiconductor
MSM514262
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Input Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
T
opr
T
stg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
—
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
(Note: 16)
Unit
V
mA
W
°C
°C
Recommended Operating Condition
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min.
4.5
2.4
–1.0
Typ.
5.0
—
—
(Ta = 0°C to 70°C) (Note: 17)
Max.
5.5
6.5
0.8
Unit
V
V
V
Capacitance
Parameter
Input Capacitance
Input/Output Capacitance
Output Capacitance
Symbol
C
I
C
I/O
C
O
(QSF)
Min.
—
—
—
(V
CC
= 5 V ±10%, f = 1 MHz, Ta = 25°C)
Max.
7
9
9
Unit
pF
pF
pF
Note:
This parameter is periodically sampled and is not 100% tested.
DC Characteristics 1
Parameter
Output "H" Level Voltage
Output "L" Level Voltage
Input Leakage Current
Symbol
V
OH
V
OL
I
LI
Condition
I
OH
= –2 mA
I
OL
= 2 mA
0
£
V
IN
£
V
CC
All other pins not
under test = 0 V
Output Leakage Current
I
LO
0
£
V
OUT
£
5.5 V
Output Disable
–10
10
–10
10
mA
Min.
2.4
—
Max.
—
0.4
Unit
V
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¡ Semiconductor
DC Characteristics 2
Item (RAM)
Operating Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
Standby Current
(RAS,
CAS
= V
IH
)
RAS
Only Refresh Current
(RAS Cycling,
CAS
= V
IH
, t
RC
= t
RC
min.)
Page Mode Current
(RAS = V
IL
,
CAS
Cycling, t
PC
= t
PC
min.)
CAS
before
RAS
Refresh Current
(RAS Cycling,
CAS
before
RAS,
t
RC
= t
RC
min.)
Data Transfer Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
Flash Write Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
Block Write Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
SAM
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Symbol
I
CC1
I
CC1A
I
CC2
I
CC2A
I
CC3
I
CC3A
I
CC4
I
CC4A
I
CC5
I
CC5A
I
CC6
I
CC6A
I
CC7
I
CC7A
I
CC8
I
CC8A
MSM514262
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
-70
85
120
8
50
85
120
70
120
85
120
85
120
85
120
85
120
-80
75
110
8
45
75
110
65
110
75
110
75
110
75
110
75
110
-10
65
100
8
40
65
100
60
100
65
100
65
100
65
100
65
100
mA
Max. Max. Max.
Unit Note
1, 2
1, 2
3
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
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