PEDD514265ESL-01
This version : Jan. 2001
Semiconductor
MSM514265E/ESL
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
Preliminary
DESCRIPTION
The MSM514265E/ESL is a 262,144-word
×
16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM514265E/ESL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS
process. The MSM514265E/ESL is available in a 40-pin plastic SOJ or 44/40-pin plastic TSOP. The
MSM514265ESL (the Self-refresh version) is specially designed for lower-power applications.
FEATURES
•
•
•
•
•
•
•
•
•
262,144-word
×
16-bit configuration
Single 5V power supply,
±10%
tolerance
Input
Output
Refresh
: TTL compatible, low input capacitance
: TTL compatible, 3-state
: 512 cycles/8ms, 512 cycles/128 ms (SL version)
Fast page mode with EDO, read modify write capability
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
CAS
before
RAS
self-refresh capability (SL version)
Package options:
40-pin 400mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM514265E/ESL-xxJS)
xx indicates speed rank.
44/40-pin 400mil plastic TSOP (TSOPII44/40-P-400-0.80-K) (Product : MSM514265E./ESL-xxTS-K)
PRODUCT FAMILY
Access Time (Max.)
Family
MSM514265E/ESL
t
RAC
60ns
70ns
t
AA
30ns
35ns
t
CAC
15ns
20ns
t
OEA
15ns
20ns
Cycle Time
(Min.)
104ns
124ns
Power Dissipation
Operating (Max.)
633mW
578mW
Standby (Max.)
5.5mW/
1.1mW (SL version)
PEDD514265ESL-01
MSM514265E/ESL
PIN CONFIGRATION (TOP VIEW)
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
NC 12
WE 13
RAS 14
NC 15
A0 16
A1 17
A2 18
A3 19
V
CC
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
V
SS
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 13
NC 14
WE 15
RAS 16
NC 17
A0 18
A1 19
A2 20
A3 21
V
CC
22
44
43
42
41
40
39
38
37
36
35
32
31
30
29
28
27
26
25
24
23
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
V
SS
40-Pin Plastic SOJ
44/40-Pin Plastic TSOP
(K Type)
Pin Name
A0
−
A8
RAS
LCAS
UCAS
DQ1–DQ16
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5V)
Ground (0V)
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same
GND voltage level must be provided to every V
SS
pin.
PEDD514265ESL-01
MSM514265E/ESL
BLOCK DIAGRAM
WE
RAS
LCAS
UCAS
Column
Address
Buffers
Internal
Address
Counter
Row
Address
Buffers
Timing
Generator
I/O
Controller
I/O
Controller
9
9
Column Decoders
8
Output
Buffers
8
OE
DQ1½DQ8
8
I/O
Selector
Input
Buffers
8
A0½A8
Refresh
Control Clock
Sense Amplifiers
16
16
Input
Buffers
8
9
9
Row
Deco-
ders
Word
Drivers
Memory
Cells
8
8
DQ9½DQ16
Output
Buffers
8
V
CC
On Chip
V
BB
Generator
V
SS
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
LCAS
*
H
L
H
L
L
H
L
L
UCAS
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
DQ Pin
Function Mode
DQ1-DQ8
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don’t Care
D
IN
High-Z
DQ9-DQ16
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don’t Care
D
IN
D
IN
High-Z
Standby
Refresh
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
* : “H” or “L”
PEDD514265ESL-01
MSM514265E/ESL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage
on
Any Pin Relative to V
SS
Voltage V
CC
supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
Rating
−0.5
to V
CC
+
0.5
−0.5
to 7.0
50
1
0 to 70
−55
to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
Min.
4.5
0
2.4
−0.5
*2
Typ.
5.0
0
Max.
5.5
0
Unit
V
V
V
V
V
CC
V
SS
V
IH
V
IL
V
CC
+
0.5
*1
0.8
Notes:
*1. The input voltage is V
CC
+
2.0V when the pulse width is less than 20ns (the pulse width is with
respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
−
2.0V when the pulse width is less than 20ns (the pulse width respect to
the point at which V
SS
is applied).
Capacitance
(V
CC
= 5V
±
10%, Ta = 25°C, f=1MHz)
Parameter
Input Capacitance (A0 – A8)
Input Capacitance
(RAS,
LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
Typ.
Max.
5
7
7
Unit
pF
pF
pF
C
IN1
C
IN2
C
I/O
PEDD514265ESL-01
MSM514265E/ESL
DC Characteristics
(V
CC
= 5V
±
10%, Ta = 0°C to 70°C)
MSM514265
E/ESL-60
Min.
Output High Voltage
Output Low Voltage
Input Leakage Current
V
OH
V
OL
I
LI
I
OH
=
−5.0mA
I
OL
= 4.2mA
0V
≤
V
I
≤
V
CC
+0.5V;
All other pins not
under test = 0V
DQ disable
0V
≤
V
O
≤
V
CC
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
Power Supply Current
(Standby)
I
CC2
RAS, CAS
≥
V
CC
−
0.2V
RAS
cycling,
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
CAS
= V
IL
,
DQ = enable
RAS
= cycling,
CAS
before
RAS
RAS
= V
IL
,
CAS
cycling,
t
HPC
= Min.
t
RC
= 125µs
CAS
before
RAS
t
RAS
= 1µs
RAS
≤
0.2V,
CAS
≤
0.2V,
2.4
0
−
10
Max.
V
CC
0.4
10
MSM514265
E/ESL-70
Min.
2.4
0
−
10
Max.
V
CC
0.4
10
V
V
µA
Parameter
Symbol
Condition
Unit Note
Output Leakage Current
Average Power Supply Current
(Operating)
I
LO
−
10
10
−
10
10
µA
I
CC1
115
2
1
200
115
105
2
mA
1,2
mA
1
200
105
µA
mA
1
1,5
1,2
Average Power Supply Current
(RAS-only Refresh)
Power Supply Current
(Standby)
Average Power Supply Current
(CAS before
RAS
Refresh)
Average Power Supply Current
(Fast Page Mode)
Average Power Supply Current
(Battery Backup)
Average Power Supply Current
(CAS before
RAS
Self-Refresh)
I
CC3
I
CC5
5
5
mA
1
I
CC6
115
105
mA
1,2
I
CC7
115
105
mA
1,3
I
CC10
300
300
µA
1,4
,5
I
CCS
300
300
µA
1,5
Notes: 1.
2.
3.
4.
5.
I
CC
Max. is specified as I
CC
for output open condition.
The address can be changed once or less while
RAS
= V
IL
.
The address can be changed once or less while
CAS
= V
IH
.
V
CC
−
0.2V
≤
V
IH
≤
V
CC
+
0.5V,
−
0.5V
≤
V
IL
≤
0.2V.
SL version.
