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MSM514400E-70TS-K

描述：
Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/20
分类：
存储    存储   
文件大小：
209KB，共15页
制造商：
LAPIS Semiconductor Co Ltd
概述
Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/20
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
零件包装代码
TSOP
包装说明
TSOP2, TSSOP20/26,.36
针数
20
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE
最长访问时间
70 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型
COMMON
JESD-30 代码
R-PDSO-G20
JESD-609代码
e0
长度
17.14 mm
内存密度
4194304 bit
内存集成电路类型
FAST PAGE DRAM
内存宽度
4
功能数量
1
端口数量
1
端子数量
20
字数
1048576 words
字数代码
1000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX4
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP2
封装等效代码
TSSOP20/26,.36
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
5 V
认证状态
Not Qualified
刷新周期
1024
座面最大高度
1.2 mm
自我刷新
NO
最大待机电流
0.001 A
最大压摆率
0.075 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
7.62 mm
文档预览
Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
PEDD514400EL-01
This version : Jan. 2001
Semiconductor
MSM514400E/EL
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
Preliminary
DESCRIPTION
The MSM514400E/EL is a 1,048,576-word
×
4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption
because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The
MSM514400E/EL is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP. The MSM514400EL (the
low-power version) is specially designed for lower-power applications.
FEATURES
•
•
•
•
•
•
•
•
•
1,048,576-word
×
4-bit configuration
Single 5V power supply,
±
10% tolerance
Input
Output
Refresh
: TTL compatible, low input capacitance
: TTL compatible, 3-state
: 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
Fast page mode, read modify write capability
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
Multi-bit test mode capability
Package options:
26/20-pin 300mil plastic SOJ
26/20-pin 300mil plastic TSOP
(SOJ26/20-P-300-1.27)
(TSOPII26/20-P-300-1.27-K)
(Product : MSM514400E/EL-xxSJ)
(Product : MSM514400E/EL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514400E/EL-60
MSM514400E/EL-70
Access Time (Max.)
t
RAC
60ns
70ns
t
AA
30ns
35ns
t
CAC
15ns
20ns
t
OEA
15ns
20ns
Power Dissipation
Cycle Time
(Min.)
Operating (Max.) Standby (Max.)
110ns
130ns
468mW
413mW
5.5mW/
1.1mW (L-version)
1/14
PEDD514400EL-01
MSM514400E/EL
PIN CONFIGRATION (TOP VIEW)
DQ1
DQ2
WE
RAS
A9
1
2
3
4
5
26
25
24
23
22
V
SS
DQ4
DQ3
CAS
OE
DQ1
DQ2
WE
RAS
A9
1
2
3
4
5
26
25
24
23
22
V
SS
DQ4
DQ3
CAS
OE
A0 9
A1 10
A2 11
A3 12
V
CC
13
18
17
16
15
14
A8
A7
A6
A5
A4
A0 9
A1 10
A2 11
A3 12
V
CC
13
18
17
16
15
14
A8
A7
A6
A5
A4
26/20-Pin Plastic SOJ
26/20-Pin Plastic TSOP
(K Type)
Pin Name
A0–A9
RAS
CAS
DQ1–DQ4
OE
WE
V
CC
V
SS
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5 V)
Ground (0 V)
Note : The same power supply voltage must be provided to every V
CC
pin, and the
same GND voltage level must be provided to every V
SS
pin.
2/14
PEDD514400EL-01
MSM514400E/EL
BLOCK DIAGRAM
Timing
Generator
Timing
Generator
RAS
CAS
10
Column
Address
Buffers
10
Column
decoders
Write
Clock
Generator
4
WE
OE
Output
Buffers
4
4
4
Input
Buffers
4
A0-A9
Internal
Address
Counter
Refresh
Control Clock
Sense Amplifiers
4
I/O
Selector
4
DQ1-DQ4
10
Row
Address
Buffers
10
Row
De-
coders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
V
SS
3/14
PEDD514400EL-01
MSM514400E/EL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage
on
Any Pin Relative to V
SS
Voltage
on
V
SS
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
Rating
−
0.5 to Vcc
+
0.5
−
0.5 to 7.0
50
1
0 to 70
−
55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta =
0
°C to 70 °C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
Min.
4.5
0
2.4
−
0.5
*2
Typ.
5.0
0
Max.
5.5
0
Vcc
+
0.5
0.8
*1
Unit
V
V
V
V
V
CC
V
SS
V
IH
V
IL
Notes:
*1. The input voltage is V
CC
+
2.0V when the pulse width is less than 20ns (the pulse width is with
respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
−
2.0V when the pulse width is less than 20ns (the pulse width respect to
the point at which V
SS
is applied).
Capacitance
(Vcc = 5V
±
10%, Ta = 25°C, f=1MHz)
Parameter
Input Capacitance (A0 – A9)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 – DQ4)
Symbol
Typ.
Max.
6
7
7
Unit
pF
pF
pF
C
IN1
C
IN2
C
I/O
4/14
查看更多>
参数对比
与MSM514400E-70TS-K相近的元器件有：MSM514400E-60SJ、MSM514400EL-70TS-K、MSM514400EL-60SJ、MSM514400EL-60TS-K、MSM514400E-70SJ、MSM514400EL-70SJ、MSM514400E-60TS-K。描述及对比如下：
型号 MSM514400E-70TS-K MSM514400E-60SJ MSM514400EL-70TS-K MSM514400EL-60SJ MSM514400EL-60TS-K MSM514400E-70SJ MSM514400EL-70SJ MSM514400E-60TS-K
描述 Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/20 Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/20 Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/20 Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/20
零件包装代码 TSOP SOJ TSOP SOJ TSOP SOJ SOJ TSOP
包装说明 TSOP2, TSSOP20/26,.36 SOJ, SOJ20/26,.34 TSOP2, TSSOP20/26,.36 SOJ, SOJ20/26,.34 TSOP2, TSSOP20/26,.36 SOJ, SOJ20/26,.34 SOJ, SOJ20/26,.34 TSOP2, TSSOP20/26,.36
针数 20 20 20 20 20 20 20 20
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE
最长访问时间 70 ns 60 ns 70 ns 60 ns 60 ns 70 ns 70 ns 60 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-G20 R-PDSO-J20 R-PDSO-G20 R-PDSO-J20 R-PDSO-G20 R-PDSO-J20 R-PDSO-J20 R-PDSO-G20
长度 17.14 mm 17.15 mm 17.14 mm 17.15 mm 17.14 mm 17.15 mm 17.15 mm 17.14 mm
内存密度 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
内存宽度 4 4 4 4 4 4 4 4
功能数量 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1
端子数量 20 20 20 20 20 20 20 20
字数 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
字数代码 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 1MX4 1MX4 1MX4 1MX4 1MX4 1MX4 1MX4 1MX4
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2 SOJ TSOP2 SOJ TSOP2 SOJ SOJ TSOP2
封装等效代码 TSSOP20/26,.36 SOJ20/26,.34 TSSOP20/26,.36 SOJ20/26,.34 TSSOP20/26,.36 SOJ20/26,.34 SOJ20/26,.34 TSSOP20/26,.36
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 1024 1024 1024 1024 1024 1024 1024 1024
座面最大高度 1.2 mm 3.55 mm 1.2 mm 3.55 mm 1.2 mm 3.55 mm 3.55 mm 1.2 mm
自我刷新 NO NO NO NO NO NO NO NO
最大待机电流 0.001 A 0.001 A 0.0002 A 0.0002 A 0.0002 A 0.001 A 0.0002 A 0.001 A
最大压摆率 0.075 mA 0.085 mA 0.075 mA 0.085 mA 0.085 mA 0.075 mA 0.075 mA 0.085 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING J BEND GULL WING J BEND GULL WING J BEND J BEND GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
宽度 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm
是否无铅 含铅 - 含铅 含铅 含铅 含铅 含铅 -
是否Rohs认证 不符合 - 不符合 不符合 不符合 不符合 不符合 -
厂商名称 LAPIS Semiconductor Co Ltd - LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd
JESD-609代码 e0 - e0 e0 e0 e0 e0 -
峰值回流温度（摄氏度） NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
端子面层 Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
索引文件:
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