E2G0025-17-42
¡ Semiconductor
¡ Semiconductor
MSM514900C/CSL
DESCRIPTION
This
MSM514900C/CSL
version: Jan. 1998
Previous version: May 1997
524,288-Word
¥
9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
The MSM514900C/CSL is a 524,288-word
¥
9-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM514900C/CSL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
single-layer metal CMOS process. The MSM514900C/CSL is available in a 28-pin plastic SOJ or 28-
pin plastic TSOP. The MSM514900CSL (the self-refresh version) is specially designed for lower-
power applications.
FEATURES
• 524,288-word
¥
9-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (SL version)
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
•
CAS
before
RAS
self-refresh capability (SL version)
• Package options:
28-pin 400 mil plastic SOJ
(SOJ28-P-400-1.27)
(Product : MSM514900C/CSL-xxJS)
28-pin 400 mil plastic TSOP
(TSOPII28-P-400-1.27-K) (Product : MSM514900C/CSL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514900C/CSL-60
MSM514900C/CSL-70
MSM514900C/CSL-80
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
60 ns 35 ns 20 ns 20 ns
70 ns 35 ns 20 ns 20 ns
80 ns 40 ns 20 ns 20 ns
Power Dissipation
Cycle Time
(Min.)
Operating (Max.) Standby (Max.)
110 ns
130 ns
150 ns
770 mW
715 mW
660 mW
5.5 mW/
1.1 mW (SL version)
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¡ Semiconductor
MSM514900C/CSL
PIN CONFIGURATION (TOP VIEW)
V
CC
1
28 V
SS
V
CC
1
28 V
SS
27 DQ9
26 DQ8
25 DQ7
24 DQ6
23
CAS
22
OE
21 NC
20 A8
19 A7
18 A6
17 A5
16 A4
15 V
SS
DQ1 2
27 DQ9
DQ1 2
DQ2 3
DQ3 4
DQ4 5
DQ2 3
DQ3 4
DQ4 5
DQ5 6
26 DQ8
25 DQ7
24 DQ6
23
CAS
22
OE
DQ5 6
WE
7
WE
7
RAS
8
A9R 9
21 NC
RAS
8
A9R 9
20 A8
19 A7
18 A6
17 A5
16 A4
A0 10
A1 11
A2 12
A3 13
A0 10
A1 11
A2 12
A3 13
V
CC
14
28-Pin Plastic SOJ
15 V
SS
V
CC
14
28-Pin Plastic TSOP
(K Type)
Pin Name
A0 - A8, A9R
RAS
CAS
DQ1 - DQ9
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input / Data Output
Output Enable
Write Enable
Power Supply (5 V)
Ground (0 V)
No Connection
Note: The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
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¡ Semiconductor
MSM514900C/CSL
BLOCK DIAGRAM
RAS
CAS
Timing
Generator
Timing
Generator
9
Column
Address
Buffers
Internal
Address
Counter
9
Column
Decoders
Write
Clock
Generator
WE
OE
9
Output
Buffers
9
9
A0 - A8
Refresh
Control Clock
Sense
Amplifiers
9
I/O
Selector
9
9
DQ1 - DQ9
Input
Buffers
9
9
A9R
V
CC
1
Row
Address
Buffers
10
Row
De-
coders
Word
Drivers
Memory
Cells
On Chip
V
BB
Generator
V
SS
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¡ Semiconductor
MSM514900C/CSL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A8, A9R)
Input Capacitance
(RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ9)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Max.
7
7
8
Unit
pF
pF
pF
4/16
¡ Semiconductor
DC Characteristics
MSM514900C/CSL
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
Condition
MSM514900 MSM514900 MSM514900
C/CSL-70
C/CSL-60
C/CSL-80 Unit Note
Min.
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
V
V
mA
2.4
0
–10
V
OH
I
OH
= –5.0 mA
V
OL
I
OL
= 4.2 mA
0 V
£
V
I
£
6.5 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
5.5 V
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
PC
= Min.
t
RC
= 125
ms,
I
CC10
CAS
before
RAS,
t
RAS
£
1
ms
RAS
£
0.2 V,
CAS
£
0.2 V
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
Average Power
Supply Current
(Battery Backup)
Average Power
Supply Current
(CAS before
RAS
Self-Refresh)
I
LO
–10
10
–10
10
–10
10
mA
I
CC1
—
—
—
—
—
140
2
1
200
140
—
—
—
—
—
130
2
1
200
130
—
—
—
—
—
120
2
1
200
120
mA 1, 2
mA
mA
1
1, 5
mA 1, 2
—
5
—
5
—
5
mA
1
—
140
—
130
—
120
mA 1, 2
—
130
—
120
—
110
mA 1, 3
—
300
—
300
—
300
mA
1, 4,
5
I
CCS
—
300
—
300
—
300
mA
1, 5
Notes:
1.
2.
3.
4.
5.
I
CC
Max. is specified as I
CC
for output open condition.
The address can be changed once or less while
RAS
= V
IL
.
The address can be changed once or less while
CAS
= V
IH
.
V
CC
– 0.2 V
£
V
IH
£
6.5 V, –1.0 V
£
V
IL
£
0.2 V.
SL version.
5/16
Microchip MCU