Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
OKI Semiconductor
MSM51V16165F
DESCRIPTION
FEDD51V16165F-03
Issue Date: Aug. 16, 2002
1,048,576-Word
×
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
The MSM51V16165F is a 1,048,576-word
×
16-bit dynamic RAM fabricated in Oki’s silicon-gate
CMOS technology. The MSM51V16165F achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer
polysilicon/double-layer metal CMOS process. The MSM51V16165F is available in a 50/44-pin plastic
TSOP.
FEATURES
· 1,048,576-word
×
16-bit configuration
·
Single 3.3V power supply,
±0.3V
tolerance
·
Input : LVTTL compatible, low input capacitance
·
Output : LVTTL compatible, 3-state
·
Refresh : 4096 cycles/64ms
·
Fast page mode with EDO, read modify write capability
·
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
· Packages
50/44-pin 400mil plastic TSOP
(
TSOPII50/44-P-400-0.80-K
)
(Product : MSM51V16165F-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
t
RAC
50ns
60ns
70ns
t
AA
25ns
30ns
35ns
t
CAC
13ns
15ns
20ns
t
OEA
13ns
15ns
20ns
Cycle Time
(Min.)
84ns
104ns
124ns
Power Dissipation
Operating
(Max.)
270mW
252mW
234mW
Standby
(Max.)
1.8mW
MSM51V16165F
1/16
FEDD51V16165F-03
1
Semiconductor
MSM51V16165F
PIN CONFIGURATION (TOP VIEW)
V
C
1
DQ1
2
DQ2
3
DQ3 4
DQ4 5
V
C
6
DQ5 7
DQ6 8
DQ7 9
DQ8
10
NC
11
50
V
S
49
DQ16
48
DQ15
47
DQ14
46
DQ13
45
V
S
44
DQ12
43
DQ11
42
DQ10
41
DQ9
40
NC
NC
15
NC
16
WE
17
RAS
18
A11R
19
A10R
20
A0
21
A1
22
A2
23
A3
24
V
C
25
36
NC
35
LCAS
34
UCAS
33
OE
32
A9R
31
A8R
30
A7
29
A6
28
A5
27
A4
26
V
S
50/44-Pin Plastic TSOP
(K Type)
Pin Name
A0–A7, A8R–A11R
RAS
LCAS
UCAS
DQ1–DQ16
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3V)
Ground (0V)
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same GND voltage level must
be provided to every V
SS
pin.
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FEDD51V16165F-03
1
Semiconductor
MSM51V16165F
BLOCK DIAGRAM
WE
RAS
LCAS
UCAS
Column
Address
Buffers
Internal
Address
Counter
Timing
Generator
I/O
Controller
I/O
Controller
8
8
Column Decoders
8
Output
Buffers
8
DQ1-DQ8
8
I/O
Selector
Input
Buffers
8
OE
A0-A7
Refresh
Control Clock
Sense Amplifiers
16
16
Input
Buffers
8
12
A8R-A11R
4
Row
Address
Buffers
12
Row
Deco-
ders
Word
Drivers
Memory
Cells
8
8
DQ9-DQ16
Output
Buffers
8
V
CC
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
LCAS
*
H
L
H
L
L
H
L
L
UCAS
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
DQ Pin
Function Mode
DQ1-DQ8
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don’t Care
D
IN
High-Z
DQ9-DQ16
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don’t Care
D
IN
D
IN
High-Z
Standby
Refresh
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
* : “H” or “L”
3/16
FEDD51V16165F-03
1
Semiconductor
MSM51V16165F
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on Any Pin Relative to V
SS
Voltage V
CC
Supply relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
Value
–0.5 to V
CC
+0.5
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
−
0.3
*2
Typ.
3.3
0
Max.
3.6
0
V
CC
+ 0.3
*1
0.8
Unit
V
V
V
V
Notes: *1. The input voltage is V
CC
+ 1.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which V
CC
is applied).
*2. The input voltage is V
SS
−
1.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which V
SS
is applied).
PIN CAPACITANCE
(Vcc = 3.3V
±
0.3V, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 – A7, A8R – A11R)
Input Capacitance
(RAS,
LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
C
IN1
C
IN2
C
I/O
Min.
—
—
—
Max.
5
7
7
Unit
pF
pF
pF
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工业自动化与控制