Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
E2G0122-17-61
¡ Semiconductor
MSM51V16400D/DSL
¡ Semiconductor
This version: Mar. 1998
MSM51V16400D/DSL
Pr
el
im
in
ar
y
4,194,304-Word
¥
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM51V16400D/DSL is a 4,194,304-word
¥
4-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM51V16400D/DSL achieves high integration, high-speed operation,
and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
double-layer metal CMOS process. The MSM51V16400D/DSL is available in a 26/24-pin plastic SOJ
or 26/24-pin plastic TSOP. The MSM51V16400DSL (the self-refresh version) is specially designed
for lower-power applications.
FEATURES
• 4,194,304-word
¥
4-bit configuration
• Single 3.3 V power supply,
±0.3
V tolerance
• Input
: LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh : 4096 cycles/64 ms, 4096 cycles/128 ms (SL version)
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
•
CAS
before
RAS
self-refresh capability (SL version)
• Multi-bit test mode capability
• Package options:
26/24-pin 300 mil plastic SOJ
(SOJ26/24-P-300-1.27)
(Product : MSM51V16400D/DSL-xxSJ)
26/24-pin 300 mil plastic TSOP
(TSOPII26/24-P-300-1.27-K) (Product : MSM51V16400D/DSL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
110 ns
130 ns
270 mW
252 mW
234 mW
1.8 mW/
0.72 mW (SL version)
MSM51V16400D/DSL-50 50 ns 25 ns 13 ns 13 ns
MSM51V16400D/DSL-60 60 ns 30 ns 15 ns 15 ns
MSM51V16400D/DSL-70 70 ns 35 ns 20 ns 20 ns
1/17
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
V
CC
1
,
26 V
SS
V
CC
1
26 V
SS
DQ1 2
WE
4
25 DQ4
23
CAS
22
OE
DQ1 2
DQ2 3
WE
4
25 DQ4
DQ2 3
24 DQ3
24 DQ3
23
CAS
22
OE
21 A9
19 A8
RAS
5
RAS
5
A11R 6
A10R 8
A0 9
21 A9
19 A8
A11R 6
A10R 8
A0 9
18 A7
17 A6
16 A5
15 A4
14 V
SS
18 A7
17 A6
16 A5
15 A4
14 V
SS
A1 10
A2 11
A3 12
V
CC
13
28-Pin Plastic SOJ
A1 10
A2 11
A3 12
V
CC
13
28-Pin Plastic TSOP
(K Type)
Pin Name
A0 - A9,
A9R - A11R
RAS
CAS
DQ1 - DQ4
OE
WE
V
CC
V
SS
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3 V)
Ground (0 V)
MSM51V16400D/DSL
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/17
¡ Semiconductor
MSM51V16400D/DSL
BLOCK DIAGRAM
RAS
CAS
Timing
Generator
Timing
Generator
10
Column
Address
Buffers
Internal
Address
Counter
10
Column
Decoders
Write
Clock
Generator
WE
OE
4
Output
Buffers
4
4
A0 - A9
Refresh
Control Clock
Sense
Amplifiers
4
I/O
Selector
4
4
DQ1 - DQ4
Input
Buffers
4
10
A10R, A11R
V
CC
2
Row
Address
Buffers
12
Row
De-
coders
Word
Drivers
Memory
Cells
On Chip
V
BB
Generator
V
SS
3/17
¡ Semiconductor
MSM51V16400D/DSL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
–0.3
Typ.
3.3
0
—
—
Max.
3.6
0
V
CC
+ 0.3
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance
(A0 - A9, A10R, A11R)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Max.
5
7
7
Unit
pF
pF
pF
4/17
