器件参数

参数名称

属性值

是否Rohs认证

不符合

厂商名称

LAPIS Semiconductor Co Ltd

零件包装代码

TSOP2

包装说明

TSOP2, TSOP24/26,.36

针数

Reach Compliance Code

unknown

ECCN代码

EAR99

访问模式

FAST PAGE WITH EDO

最长访问时间

60 ns

其他特性

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

I/O 类型

COMMON

JESD-30 代码

R-PDSO-G24

JESD-609代码

长度

17.14 mm

内存密度

16777216 bit

内存集成电路类型

EDO DRAM

内存宽度

功能数量

端口数量

端子数量

字数

4194304 words

字数代码

4000000

工作模式

ASYNCHRONOUS

最高工作温度

70 °C

最低工作温度

组织

4MX4

输出特性

3-STATE

封装主体材料

PLASTIC/EPOXY

封装代码

TSOP2

封装等效代码

TSOP24/26,.36

封装形状

RECTANGULAR

封装形式

SMALL OUTLINE, THIN PROFILE

电源

3.3 V

认证状态

Not Qualified

刷新周期

2048

座面最大高度

1.2 mm

自我刷新

最大待机电流

0.0005 A

最大压摆率

0.09 mA

最大供电电压 (Vsup)

3.6 V

最小供电电压 (Vsup)

3 V

标称供电电压 (Vsup)

3.3 V

表面贴装

YES

技术

CMOS

温度等级

COMMERCIAL

端子面层

Tin/Lead (Sn/Pb)

端子形式

GULL WING

端子节距

1.27 mm

端子位置

DUAL

宽度

7.62 mm

文档预览

Dear customers,

About the change in the name such as "Oki Electric Industry Co. Ltd." and

"OKI" in documents to OKI Semiconductor Co., Ltd.

The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI

Semiconductor Co., Ltd. on October 1, 2008.

Therefore, please accept that although

the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"

remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".

It is a change of the company name, the company trademark, and the logo, etc. , and

NOT a content change in documents.

October 1, 2008

OKI Semiconductor Co., Ltd.

550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan

http://www.okisemi.com/en/

FEDD51V17405F-02

Semiconductor

MSM51V17405F

DESCRIPTION

This version: Nov. 2000

Previous version : Aug. 2000

4,194,304-Word

4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

The MSM51V17405F is a 4,194,304-word

4-bit dynamic RAM fabricated in Oki’s silicon-gate

CMOS technology. The MSM51V17405F achieves high integration, high-speed operation, and low-

power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

metal CMOS process. The MSM51V17405F is available in a 26/24-pin plastic SOJ or 26/24-pin plastic

TSOP.

FEATURES

∙

4,194,304-word

4-bit configuration

∙

Single 3.3V power supply,

±0.3V

tolerance

∙

Input : LVTTL compatible, low input capacitance

∙

Output : LVTTL compatible, 3-state

∙

Refresh : 2048 cycles/32ms

∙

Fast page mode with EDO, read modify write capability

∙

CAS

before

RAS

refresh, hidden refresh,

RAS-only

refresh capability

∙

Packages

26/24-pin 300mil plastic SOJ

(

SOJ26/24-P-300-1.27

)

(Product : MSM51V17405F-xxSJ)

26/24-pin 300mil plastic TSOP

(

TSOPII26/24-P-300-0.80-K

)

(Product : MSM51V17405F-xxTS-K)

xx indicates speed rank.

PRODUCT FAMILY

Access Time (Max.)

Family

RAC

50ns

60ns

70ns

25ns

30ns

35ns

CAC

13ns

15ns

20ns

OEA

13ns

15ns

20ns

Cycle Time

(Min.)

84ns

104ns

124ns

Power Dissipation

Operating

(Max.)

360mW

324mW

288mW

Standby

(Max.)

1.8mW

MSM51V17405F

1/17

FEDD51V17405F-02

Semiconductor

MSM51V17405F

PIN CONFIGURATION (TOP VIEW)

DQ1

DQ2

RAS

A10

DQ4

DQ3

CAS

DQ1

DQ2

RAS

DQ4

DQ3

CAS

A10 8

A0 9

A1 10

A2 11

A3 12

26/24-Pin Plastic

SOJ

26/24-Pin Plastic TSOP

(K Type)

Pin Name

A0–A10

RAS

CAS

DQ1–DQ4

Function

Address Input

Row Address Strobe

Column Address Strobe

Data Input/Data Output

Output Enable

Write Enable

Power Supply (3.3V)

Ground (0V)

No Connection

Note : The same power supply voltage must be provided to every V

pin, and the same GND voltage level must

be provided to every V

pin.

2/17

FEDD51V17405F-02

Semiconductor

MSM51V17405F

BLOCK DIAGRAM

RAS

CAS

Timing

Generator

Timing

Generator

Column

Address

Buffers

Internal

Address

Counter

Row

Address

Buffers

Column Decoders

Write

Clock

Generator

Output

Buffers

Input

Buffers

−

A10

Refresh

Control Clock

Sense Amplifiers

I/O

Selector

DQ1

−

Row

Deco-

ders

Word

Drivers

Memory

Cells

On Chip

Generator

3/17

FEDD51V17405F-02

Semiconductor

MSM51V17405F

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIUM RATINGS

Parameter

Voltage V

Supply relative to V

Short Circuit Output Current

Power Dissipation

Operating Temperature

Storage Temperature

Symbol

opr

stg

Value

–0.5 to 4.6

0 to 70

–55 to 150

Unit

°C

*: Ta = 25°C

RECOMMENDED OPERATING CONDITIONS

(Ta = 0 to 70°C)

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Symbol

Min.

3.0

2.0

−

0.3

Typ.

3.3



Max.

3.6

+ 0.3

0.8

Unit

Notes: *1. The input voltage is V

+ 1.0V when the pulse width is less than 20ns (the pulse width is with respect

to the point at which V

is applied).

*2. The input voltage is V

−

1.0V when the pulse width is less than 20ns (the pulse width respect to the

point at which V

is applied).

PIN CAPACITANCE

(Vcc = 3.3V

0.3V, Ta = 25°C, f = 1 MHz)

Parameter

Input Capacitance (A0 – A10)

Input Capacitance

(RAS,

CAS, WE, OE)

Output Capacitance (DQ1 – DQ4)

Symbol

IN1

IN2

I/O

Min.

—

Min.

Unit

4/17

参数对比

与MSM51V17405F-60TS-K相近的元器件有：MSM51V17405F-70TS-K、MSM51V17405F-60SJ、MSM51V17405F-50SJ、MSM51V17405F-50TS-K、MSM51V17405F-70SJ。描述及对比如下：

型号	MSM51V17405F-60TS-K	MSM51V17405F-70TS-K	MSM51V17405F-60SJ	MSM51V17405F-50SJ	MSM51V17405F-50TS-K	MSM51V17405F-70SJ
描述	EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24	EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24	EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24	EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24	EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24	EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24
厂商名称	LAPIS Semiconductor Co Ltd	LAPIS Semiconductor Co Ltd	LAPIS Semiconductor Co Ltd	LAPIS Semiconductor Co Ltd	LAPIS Semiconductor Co Ltd	LAPIS Semiconductor Co Ltd
零件包装代码	TSOP2	TSOP2	SOJ	SOJ	TSOP2	SOJ
包装说明	TSOP2, TSOP24/26,.36	TSOP2, TSOP24/26,.36	SOJ, SOJ24/26,.34	SOJ, SOJ24/26,.34	TSOP2, TSOP24/26,.36	SOJ, SOJ24/26,.34
针数	26	26	24	24	26	24
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
最长访问时间	60 ns	70 ns	60 ns	50 ns	50 ns	70 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-G24	R-PDSO-G24	R-PDSO-J24	R-PDSO-J24	R-PDSO-G24	R-PDSO-J24
长度	17.14 mm	17.14 mm	17.15 mm	17.15 mm	17.14 mm	17.15 mm
内存密度	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bi
内存集成电路类型	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM
内存宽度	4	4	4	4	4	4
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	24	24	24	24	24	24
字数	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
字数代码	4000000	4000000	4000000	4000000	4000000	4000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	4MX4	4MX4	4MX4	4MX4	4MX4	4MX4
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	SOJ	SOJ	TSOP2	SOJ
封装等效代码	TSOP24/26,.36	TSOP24/26,.36	SOJ24/26,.34	SOJ24/26,.34	TSOP24/26,.36	SOJ24/26,.34
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	2048	2048	2048	2048	2048	2048
座面最大高度	1.2 mm	1.2 mm	3.55 mm	3.55 mm	1.2 mm	3.55 mm
自我刷新	NO	NO	NO	NO	NO	NO
最大待机电流	0.0005 A	0.0005 A	0.002 A	0.002 A	0.0005 A	0.002 A
最大压摆率	0.09 mA	0.08 mA	0.09 mA	0.1 mA	0.1 mA	0.08 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	GULL WING	GULL WING	J BEND	J BEND	GULL WING	J BEND
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm
是否Rohs认证	不符合	不符合	-	不符合	不符合	不符合
JESD-609代码	e0	e0	-	e0	e0	e0
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)