¡ Semiconductor
MSM51V18165B/BSL
¡ Semiconductor
MSM51V18165B/BSL
E2G0087-17-41
1,048,576-Word
¥
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM51V18165B/BSL is a 1,048,576-word
¥
16-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
double-layer metal CMOS process. The MSM51V18165B/BSL is available in a 42-pin plastic SOJ or
50/44-pin plastic TSOP. The MSM51V18165BSL (the self-refresh version) is specially designed for
lower-power applications.
FEATURES
• 1,048,576-word
¥
16-bit configuration
• Single 3.3 V power supply,
±0.3
V tolerance
• Input
: LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (SL version)
• Fast page mode with EDO, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
•
CAS
before
RAS
self-refresh capability (SL version)
• Package options:
42-pin 400 mil plastic SOJ
(SOJ42-P-400-1.27)
(Product : MSM51V18165B/BSL-xxJS)
50/44-pin 400 mil plastic TSOP
(TSOPII50/44-P-400-0.80-K) (Product : MSM51V18165B/BSL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
84 ns
104 ns
124 ns
684 mW
576 mW
504 mW
1.8 mW/
0.72 mW (SL version)
MSM51V18165B/BSL-50 50 ns 25 ns 13 ns 13 ns
MSM51V18165B/BSL-60 60 ns 30 ns 15 ns 15 ns
MSM51V18165B/BSL-70 70 ns 35 ns 20 ns 20 ns
409
MSM51V18165B/BSL
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
NC 12
WE
13
RAS
14
NC 15
NC 16
A0 17
A1 18
A2 19
A3 20
V
CC
21
42 V
SS
41 DQ16
40 DQ15
39 DQ14
38 DQ13
37 V
SS
36 DQ12
35 DQ11
34 DQ10
33 DQ9
32 NC
31
LCAS
30
UCAS
29
OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 V
SS
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
50 V
SS
49 DQ16
48 DQ15
47 DQ14
46 DQ13
45 V
SS
44 DQ12
43 DQ11
42 DQ10
41 DQ9
40 NC
NC 15
NC 16
WE
17
RAS
18
NC 19
NC 20
A0 21
A1 22
A2 23
A3 24
V
CC
25
36 NC
35
LCAS
34
UCAS
33
OE
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 V
SS
42-Pin Plastic SOJ
50/44-Pin Plastic TSOP
(K Type)
Pin Name
A0 - A9
RAS
LCAS
UCAS
DQ1 - DQ16
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3 V)
Ground (0 V)
No Connection
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
410
¡ Semiconductor
MSM51V18165B/BSL
BLOCK DIAGRAM
Timing
Generator
WE
I/O
Controller
I/O
Controller
OE
RAS
LCAS
UCAS
8
Output
Buffers
8
DQ1 - DQ8
8
10
Column
Address
Buffers
Internal
Address
Counter
Row
Address
10
Buffers
10
Column Decoders
Input
Buffers
8
A0
-
A9
Refresh
Control Clock
Sense Amplifiers
16
I/O
Selector
16
8
10
Input
Buffers
8
Row
Deco-
ders
Word
Drivers
Memory
Cells
8
DQ9 - DQ16
Output
Buffers
8
V
CC
On Chip
V
BB
Generator
V
SS
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
LCAS
*
H
L
H
L
L
H
L
L
UCAS
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don't Care
D
IN
High-Z
DQ Pin
DQ1 - DQ8
DQ9 - DQ16
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don't Care
D
IN
D
IN
High-Z
Function Mode
Standby
Refresh
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
—
*: "H" or "L"
411
MSM51V18165B/BSL
¡ Semiconductor
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
–0.3
Typ.
3.3
0
—
—
Max.
3.6
0
V
CC
+ 0.3
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A9)
Input Capacitance
(RAS,
LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Max.
5
7
7
Unit
pF
pF
pF
412
¡ Semiconductor
DC Characteristics
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
MSM51V18165B/BSL
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C)
Condition
MSM51V18165 MSM51V18165 MSM51V18165
B/BSL-50
B/BSL-60
B/BSL-70 Unit Note
Min.
V
OH
I
OH
= –2.0 mA
V
OL
I
OL
= 2.0 mA
0 V
£
V
I
£
V
CC
+ 0.3 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
V
CC
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
HPC
= Min.
t
RC
= 125
ms,
I
CC10
CAS
before
RAS,
t
RAS
£
1
ms
RAS
£
0.2 V,
CAS
£
0.2 V
—
300
—
300
—
300
mA
1, 4,
5
—
190
—
160
—
140
mA
1, 3
—
190
—
160
—
140
mA
1, 2
—
5
—
5
—
5
mA
1
—
190
—
160
—
140
mA
1, 2
–10
10
–10
10
–10
10
mA
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
V
V
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
Average Power
Supply Current
(Battery Backup)
Average Power
Supply Current
(CAS before
RAS
Self-Refresh)
I
LO
–10
10
–10
10
–10
10
mA
I
CC1
—
—
—
—
190
2
0.5
200
—
—
—
—
160
2
0.5
200
—
—
—
—
140
2
0.5
200
mA
1, 2
mA
mA
1
1, 5
I
CCS
—
300
—
300
—
300
mA
1, 5
Notes : 1.
2.
3.
4.
5.
I
CC
Max. is specified as I
CC
for output open condition.
The address can be changed once or less while
RAS
= V
IL
.
The address can be changed once or less while
CAS
= V
IH
.
V
CC
– 0.2 V
£
V
IH
£
V
CC
+ 0.3 V, –0.3 V
£
V
IL
£
0.2 V.
SL version.
413
模拟电子