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MSM51V18165F-50JS

描述：
EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42
分类：
存储    存储   
文件大小：
255KB，共16页
制造商：
LAPIS Semiconductor Co Ltd
概述
EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
零件包装代码
SOJ
包装说明
SOP, SOJ42,.44
针数
42
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE WITH EDO
最长访问时间
50 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型
COMMON
JESD-30 代码
R-PDSO-G42
JESD-609代码
e0
内存密度
16777216 bit
内存集成电路类型
EDO DRAM
内存宽度
16
功能数量
1
端口数量
1
端子数量
42
字数
1048576 words
字数代码
1000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOJ42,.44
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
电源
3.3 V
认证状态
Not Qualified
刷新周期
1024
自我刷新
NO
最大待机电流
0.0005 A
最大压摆率
0.125 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
文档预览
Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
FEDD51V18165F-01
1
Semiconductor
MSM51V18165F
DESCRIPTION
This version: October. 2000
Previous version :
1,048,576-Word
×
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
The MSM51V18165F is a 1,048,576-word
×
16-bit dynamic RAM fabricated in Oki’s silicon-gate
CMOS technology. The MSM51V18165F achieves high integration, high-speed operation, and low-
power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM51V18165F is available in a 42-pin plastic SOJ or 50/44-pin plastic
TSOP.
FEATURES
∙
1,048,576-word
×
16-bit configuration
∙
Single 3.3V power supply,
±0.3V
tolerance
∙
Input : LVTTL compatible, low input capacitance
∙
Output : LVTTL compatible, 3-state
∙
Refresh : 1024 cycles/16ms
∙
Fast page mode with EDO, read modify write capability
∙
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
∙
Packages
(
SOJ42-P-400-1.27
)
42-pin 400mil plastic SOJ
(Product : MSM51V18165F-xxJS)
50/44-pin 400mil plastic TSOP
(
TSOPII50/44-P-400-0.80-K
)
(Product : MSM51V18165F-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
t
RAC
50ns
60ns
70ns
t
AA
25ns
30ns
35ns
t
CAC
13ns
15ns
20ns
t
OEA
13ns
15ns
20ns
Cycle Time
(Min.)
84ns
104ns
124ns
Power Dissipation
Operating
(Max.)
450mW
414mW
378mW
Standby
(Max.)
1.8mW
MSM51V18165F
1/15
FEDD51V18165F-01
1
Semiconductor
MSM51V18165F
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1
2
DQ2
3
DQ3
4
DQ4
5
V
CC
6
DQ5 7
DQ6
8
DQ7
9
DQ8
10
NC
11
NC
12
WE
13
RAS
14
NC
15
NC
16
A0
17
A1
18
A2
19
A3
20
V
CC
21
42-Pin Plastic
SOJ
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
V
CC
1
DQ1
2
DQ2
3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8
10
NC
11
50
49
48
47
46
45
44
43
42
41
40
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
NC
15
NC
16
WE
17
RAS
18
NC
19
NC
20
A0
21
A1
22
A2
23
A3
24
V
CC
25
36
35
34
33
32
31
30
29
28
27
26
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
50/44-Pin Plastic TSOP
(K Type)
Pin Name
A0–A9
RAS
LCAS
UCAS
DQ1–DQ16
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3V)
Ground (0V)
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same GND voltage level must
be provided to every V
SS
pin.
2/15
FEDD51V18165F-01
1
Semiconductor
MSM51V18165F
BLOCK DIAGRAM
WE
RAS
LCAS
UCAS
Column
Address
Buffers
Internal
Address
Counter
Timing
Generator
I/O
Controller
I/O
Controller
10
10
Column Decoders
8
Output
Buffers
8
DQ1-DQ8
8
I/O
Selector
Input
Buffers
8
OE
A0-A9
Refresh
Control Clock
Sense Amplifiers
16
16
Input
Buffers
8
10
Row
Address
Buffers
10
Row
Deco-
ders
Word
Drivers
Memory
Cells
8
8
DQ9-DQ16
Output
Buffers
8
V
CC
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
LCAS
*
H
L
H
L
L
H
L
L
UCAS
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
DQ Pin
Function Mode
DQ1-DQ8
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don’t Care
D
IN
High-Z
DQ9-DQ16
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don’t Care
D
IN
D
IN
High-Z
Standby
Refresh
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
* : “H” or “L”
3/15
FEDD51V18165F-01
1
Semiconductor
MSM51V18165F
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on Any Pin Relative to V
SS
Voltage V
CC
Supply relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
Value
–0.5 to V
CC
+ 0.3
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
−
0.3
*2
Typ.
3.3
0
Max.
3.6
0
V
CC
+ 0.3
*1
0.8
Unit
V
V
V
V
Notes: *1. The input voltage is V
CC
+ 1.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which V
CC
is applied).
*2. The input voltage is V
SS
−
1.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which V
SS
is applied).
PIN CAPACITANCE
(Vcc = 3.3V
±
0.3V, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 - A9)
Input Capacitance
(RAS,
LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
C
IN1
C
IN2
C
I/O
Min.
—
—
—
Max.
5
7
7
Unit
pF
pF
pF
4/15
查看更多>
参数对比
与MSM51V18165F-50JS相近的元器件有：MSM51V18165F-60JS、MSM51V18165F-50TS-K、MSM51V18165F-70TS-K、MSM51V18165F-60TS-K。描述及对比如下：
型号 MSM51V18165F-50JS MSM51V18165F-60JS MSM51V18165F-50TS-K MSM51V18165F-70TS-K MSM51V18165F-60TS-K
描述 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44
厂商名称 LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd
零件包装代码 SOJ SOJ TSOP2 TSOP2 TSOP2
包装说明 SOP, SOJ42,.44 SOP, SOJ42,.44 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 SOP, TSOP44/50,.46,32 SOP, TSOP44/50,.46,32
针数 42 42 50 50 50
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
最长访问时间 50 ns 60 ns 50 ns 70 ns 60 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型 COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-G42 R-PDSO-G42 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44
内存密度 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit
内存集成电路类型 EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM
内存宽度 16 16 16 16 16
功能数量 1 1 1 1 1
端口数量 1 1 1 1 1
端子数量 42 42 44 44 44
字数 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
字数代码 1000000 1000000 1000000 1000000 1000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C
组织 1MX16 1MX16 1MX16 1MX16 1MX16
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP SOP SOP SOP
封装等效代码 SOJ42,.44 SOJ42,.44 TSOP44/50,.46,32 TSOP44/50,.46,32 TSOP44/50,.46,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 1024 1024 1024 1024 1024
自我刷新 NO NO NO NO NO
最大待机电流 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A
最大压摆率 0.125 mA 0.115 mA 0.125 mA 0.105 mA 0.115 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 DUAL DUAL DUAL DUAL DUAL
长度 - 27.3 mm 20.95 mm 20.95 mm -
座面最大高度 - 3.75 mm 1.2 mm 1.2 mm -
宽度 - 10.16 mm 10.16 mm 10.16 mm -
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
索引文件:
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