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MSM531652F-10GS-K

描述:
MASK ROM, 1MX16, 100ns, CMOS, PDSO44, SOP-44
分类:
存储    存储   
文件大小:
103KB,共8页
制造商:
概述
MASK ROM, 1MX16, 100ns, CMOS, PDSO44, SOP-44
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
包装说明
SOP, SOP44,.63
Reach Compliance Code
unknown
ECCN代码
EAR99
最长访问时间
100 ns
备用内存宽度
8
JESD-30 代码
R-PDSO-G44
JESD-609代码
e0
内存密度
16777216 bit
内存集成电路类型
MASK ROM
内存宽度
16
功能数量
1
端子数量
44
字数
1048576 words
字数代码
1000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX16
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP44,.63
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
电源
5 V
认证状态
Not Qualified
最大待机电流
0.00005 A
最大压摆率
0.1 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
文档预览
Semiconductor
MSM531652F
1,048,576-Words x 16-bit or 2,097,152-Bytes x 8-bit MaskROM
16Words x 16-Bit or 32Bytes x 8-Bit/Page Mode MASKROM
DESCRIPTION
The OKI MSM531652F is a 1,048,576-words x 16-bit or 2,097,152-bytes x 8-bit CMOS
Mask ROM with an asynchronous page read mode. Each page is organized 16 words x 16-
bit or 32bytes x 8-bit. It operates on a single 5.0V power supply and is TTL compatible. The
chip's asynchronous I/O requires no external clock assuring easy operation. A power-down
mode provides low power dissipation when the chip is not selected. The CE and OE pins are
provided as control signals that permit three-stated output allowing easy memory expansion
on a system bus.The MSM531652F is suited for use as large capacity fixed memory for
microcomputers and data terminals.
FEATURES
Single 5.0V power supply
1,048,576 words x 16-bit / 2,097,152-bytes x 8-bit
16- words(A3,A2,A1,A0) or 32-bytes(A3,A2,A1,A0,A-1) / Page
Access time
100ns Max (Normal access)
50ns Max (Page access)
Input/Output TTL compatible
Tri-State output configurations
Internal powerdown function
Packages:
42-PIN PLASTIC DIP (DIP42-P-600-2.45)
44-PIN PLASTIC SOP (SOP44-P-600-1.27-K)
48-PIN PLASTIC TSOP (TSOPII48-P-550-0.80-K)
1
MSM531652F
PIN CONFIGURATION
NC 1
NC 2
NC 1
A18 1
A17 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
CE 11
V
SS
12
OE 13
D0 14
D8 15
D1 16
D9 17
D2 18
D10 19
D3 20
D11 21
42 PIN DIP
42 A19
41 A8
40 A9
39 A10
38 A11
37 A12
36 A13
35 A14
34 A15
33 A16
32 BYTE
31 V
SS
A18 2
A17 3
A7 4
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
CE 12
V
SS
13
44 NC
43 A19
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 BYTE
32 V
SS
30 D7
29 D14
28 D6
27 D13
26 D5
25 D12
24 D4
23 V
CC
44 PIN SOP
NC 3
A18 4
A17 5
A7 6
A6 7
A5 8
A4 9
A3 10
A2 11
A1 12
A0 13
CE 14
V
SS
15
D0 17
D8 18
D1 19
D9 20
D2 21
D10 22
D3 23
D11 24
48 NC
47 NC
46 NC
45 A19
44 A8
43 A9
42 A10
41 A11
40 A12
39 A13
38 A14
37 A15
36 A16
35 BYTE
34 V
SS
33 D15/A-1
32 D7
31 D14
30 D6
29 D13
28 D5
27 D12
26 D4
25 V
CC
30 D15/A-1 OE 14
29 D7
D0 15
28 D14
27 D6
26 D13
25 D5
24 D12
23 D4
22 V
CC
D8 16
D1 17
D9 18
D2 19
D10 20
D3 21
D11 22
31 D15/A-1 OE 16
48 PIN TSOP
Pin Name
D15/A-1
A0 to A19
D0 to D15
CE
OE
BYTE
V
CC
, V
SS
Function
Data output / address input
Address input
Data output
Chip enable
Output enable
Mode switch
Power supply
2
MSM531652F
BLOCK DIAGRAM
V
CC
V
SS
A-1
BYTE
Output Switching Between 8 and 16 bits
CE
OE
CE
OE
Control
A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Memory Cell
Matrix
1,048,576-Word x 16 or 2,097,152 x 8
X
Decoder
Address
Buffer
Multiplexer & Page Data Latch
Y
Decoder
D0
D1
D2
D3
D4
D5
Output Buffer
D6
D7
D8
D10 D12 D14
D9 D11 D13 D15
FUNCTION TABLE
CE
H
L
L
L
L
L
L
L
OE
X
H
L
L
L
L
L
L
BYTE
X
X
H
H
L
L
L
L
A-1/D15
X
X
Input Inhibited (D15)
Input Inhibited (D15)
D0—D7
Hi-Z
Hi-Z
D0 to D7
D0 to D7
D0 to D7
D8 to D15
D0 to D7
D8 to D15
D8—D15
Hi-Z
Hi-Z
D8 to D15
D8 to D15
Hi-Z
Hi-Z
Hi-Z
Hi-Z
DOUT Mode
Hi-Z
16 bit
16 bit(Page Mode)
8 bit
8 bit(Page Mode)
LSB
A0
A0
A-1
A-1
MSB
A19
A3
A19
A3
L
H
L
H
3
MSM531652F
ABSOLUTE MAXIMUM LIMITS
Parameter
Power Supply Voltage
Input Voltage
Output Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
CC
V
I
V
O
P
D
T
opr
T
stg
Per Package T
opr
= 25°C
to V
SS
Conditions
Limits
–0.3 to 7
–0.3 to V
CC
+ 0.5
–0.3 to V
CC
+ 0.5
1.0
0 to 70
–55 to 150
Unit
V
V
V
W
°C
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Power Supply Voltage
"H" Input Voltage
"L" Input Voltage
Operating Temperature
Symbol
V
CC
V
SS
V
IH
V
IL
T
opr
Conditions
Limits
Min.
4.5
0.0
2.2
–0.3
0
Typ.
5.0
0.0
5.0
0.0
Max.
5.5
0.0
5.5
0.8
70
Unit
V
V
V
V
°C
DC CHARACTERISTICS
(V
CC
= 5V±10%, Ta = 0 to 70°C)
Parameter
"H" Output Voltage
"L" Output Voltage
Input Leakage Current
Output Leakage Current
Power Supply Current
(Operating)
Power Supply Current
(Standby)
Symbol
V
OH
V
OL
I
LI
I
LO
I
CC
I
CCS1
I
CCS
Conditions
I
OH
= –400uA
I
OH
= 2.1mA
V
I
= 0 to V
CC
V
O
= 0 to V
CC
CE = V
IH MIN
CE = V
IL,
OE = V
IH,
t
C
= 100ns
CE = V
CC
–0.2V
CE = V
IH MIN
Limits
Min.
2.4
–10
–10
Typ.
Max.
0.4
10
10
100
50
500
Unit
V
V
µA
µA
mA
µA
µA
4
MSM531652F
AC CHARACTERISTICS
Test conditions
Parameter
Input Signal Level
Transtion Time
Timing Reference Level
Load Condition
Conditions
V
IH
=3.0V, V
IL
=0.0V
tr=tf=5ns
Input Voltage=1.5V
Output Voltage=0.8V&2.0V
CL=100pF+1TTL
Read Cycle
(Ta = 0 to 70°C)
Parameter
Random Access Cycle time
Random Address Access time
Page Set up time
Page Access Cycle time
Page Access time
CE Access time
OE Access time
CE Output Disable time
OE Output Disable time
Output Hold time
Symbol
t
C
t
ACC
t
PSET
t
PC
t
PAC
t
CE
t
OE
t
CHZ
t
OHZ
t
OH
Conditions
Limits
Min.
100
120
50
0
0
0
Typ.
Max.
100
50
100
50
40
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle (Note1)
t
C
Address
t
ACC
OE
t
OE
D
OUT
t
OH
5
参数对比
与MSM531652F-10GS-K相近的元器件有:MSM531652F-10TS-K、MSM531652F-10RS。描述及对比如下:
型号 MSM531652F-10GS-K MSM531652F-10TS-K MSM531652F-10RS
描述 MASK ROM, 1MX16, 100ns, CMOS, PDSO44, SOP-44 MASK ROM, 1MX16, 100ns, CMOS, PDSO48, TSOP2-48 MASK ROM, 1MX16, 100ns, CMOS, PDIP42, DIP-42
是否Rohs认证 不符合 不符合 不符合
厂商名称 LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd
包装说明 SOP, SOP44,.63 SOP, TSOP48,.6,32 DIP, DIP42,.6
Reach Compliance Code unknown unknown unknown
最长访问时间 100 ns 100 ns 100 ns
备用内存宽度 8 8 8
JESD-30 代码 R-PDSO-G44 R-PDSO-G48 R-PDIP-T42
JESD-609代码 e0 e0 e0
内存密度 16777216 bit 16777216 bit 16777216 bit
内存集成电路类型 MASK ROM MASK ROM MASK ROM
内存宽度 16 16 16
功能数量 1 1 1
端子数量 44 48 42
字数 1048576 words 1048576 words 1048576 words
字数代码 1000000 1000000 1000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C
组织 1MX16 1MX16 1MX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP DIP
封装等效代码 SOP44,.63 TSOP48,.6,32 DIP42,.6
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL
电源 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified
最大待机电流 0.00005 A 0.00005 A 0.00005 A
最大压摆率 0.1 mA 0.1 mA 0.1 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V
表面贴装 YES YES NO
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING THROUGH-HOLE
端子节距 1.27 mm 0.8 mm 2.54 mm
端子位置 DUAL DUAL DUAL
Base Number Matches - 1 1
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