Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
E2L0017-17-Y1
¡ Semiconductor
MSM548263
¡ Semiconductor
262,144-Word
¥
8-Bit Multiport DRAM
This version: Jan. 1998
MSM548263
Previous version: Dec. 1996
DESCRIPTION
The MSM548263 is a 2-Mbit CMOS multiport DRAM composed of a 262,144-word by 8-bit
dynamic RAM, and a 512-word by 8-bit SAM. Its RAM and SAM operate independently and
asynchronously.
It supports three types of operations: random access to RAM port, high speed serial access to
SAM port, and bidirectional transfer of data between any selected row in the RAM port and the
SAM port. In addition to the conventional multiport DRAM operating modes, the MSM548263
features block write, flash write functions and extended page mode on the RAM port and a split
data transfer capability, programmable stops on the SAM port. The SAM port requires no refresh
operation because it uses static CMOS flip-flops.
FEATURES
• Single power supply: 5 V
±10%
•
RAS
only refresh
• Full TTL compatibility
•
CAS
before
RAS
refresh
• Multiport organization
• Hidden refresh
RAM : 256K word
¥
8 bits
• Serial read/write
SAM : 512 word
¥
8 bits
• 512 tap location
• Extended page mode
• Programmable stops
• Write per bit
• Bidirectional data transfer
• Persistent write per bit
• Split transfer
• Masked flash write
• Masked write transfer
• Masked block write
• Refresh: 512 cycles/8 ms
• Package options:
40-pin 400 mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM548263-xxJS)
44/40-pin 400 mil plastic TSOP (Type II)(TSOPII44/40-P-400-0.80-K)(Product : MSM548263-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM548263-60
MSM548263-70
MSM548263-80
Access Time
RAM
60 ns
70 ns
80 ns
SAM
17 ns
17 ns
20 ns
Cycle Time
RAM
120 ns
140 ns
150 ns
SAM
22 ns
22 ns
25 ns
Power Dissipation
Operating
140 mA
130 mA
120 mA
Standby
8 mA
8 mA
8 mA
1/40
¡ Semiconductor
MSM548263
PIN CONFIGURATION (TOP VIEW)
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
V
SS
SC
SDQ8
SDQ7
SDQ6
SDQ5
SE
DQ8
DQ7
DQ6
DQ5
V
SS
DSF
NC
CAS
QSF
A0
A1
A2
A3
V
SS
SDQ1
SDQ2
SDQ3
SDQ4
TRG
DQ1
DQ2
DQ3
DQ4
V
SS
WE
38
37
36
35
34
33
32
31
V
CC
SC
SDQ1
SDQ2
SDQ3
SDQ4
TRG
DQ1
DQ2
DQ3
1
2
3
4
5
6
7
8
9
10
44
43
42
41
40
39
38
37
36
35
V
SS
SDQ8
SDQ7
SDQ6
SDQ5
SE
DQ8
DQ7
DQ6
DQ5
30
29
28
27
26
25
24
23
22
21
RAS
A8
A7
A6
A5
A4
V
CC
DQ4
V
SS
WE
RAS
A8
A7
A6
A5
A4
V
CC
13
14
15
16
17
18
19
20
21
22
32
31
30
29
28
27
26
25
24
23
V
SS
DSF
NC
CAS
QSF
A0
A1
A2
A3
V
SS
44/40-Pin Plastic TSOP (II)
(K Type)
40-Pin Plastic SOJ
Pin Name
A0 - A8
DQ1 - DQ8
SDQ1 - SDQ8
RAS
CAS
WE
TRG
Function
Address Input
RAM Inputs/Outputs
SAM Inputs/Outputs
Row Address Strobe
Column Address Strobe
Write Enable
Transfer/Output Enable
Pin Name
SC
SE
DSF
QSF
V
CC
V
SS
NC
Function
Serial Clock
SAM Port Enable
Special Function Input
Special Function Output
Power Supply (5 V)
Ground (0 V)
No Connection
Note:
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/40
BLOCK DIAGRAM
¡ Semiconductor
Column
Address
Buffer
Column Decoder
Block Write
Control
I/O Control
Column Mask
Register
Color Register
Mask Register
RAM Input
Buffer
DQ 1 - 8
RAM Output
Buffer
Sense Amp.
Row Decoder
Row
Address
Buffer
512
¥
512
¥
8
RAM ARRAY
Flash Write
Control
SAM Input
Buffer
SDQ 1 - 8
SAM Output
Buffer
Timing
Generator
A0 - A8
Refresh
Counter
Gate
SAM
Gate
SAM
RAS
CAS
TRG
WE
DSF
SC
SE
Serial Decoder
SAM
Address
Buffer
SAM Address
Counter
QSF
SAM Stop
Control
V
CC
MSM548263
V
SS
3/40
¡ Semiconductor
MSM548263
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(Note: 1)
Parameter
Input Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
T
opr
T
stg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
—
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
Recommended Operating Conditions
(Ta = 0°C to 70°C) (Note: 2)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min.
4.5
2.4
–1.0
Typ.
5.0
—
—
Max.
5.5
6.5
0.8
Unit
V
V
V
Capacitance
(V
CC
= 5 V ±10%, f = 1 MHz, Ta = 25°C)
Parameter
Input Capacitance
Input/Output Capacitance
Output Capacitance
Symbol
C
i
C
io
C
o
(QSF)
Min.
—
—
—
Max.
8
9
9
Unit
pF
pF
pF
Note:
This parameter is periodically sampled and is not 100% tested.
DC Characteristics 1
Parameter
Output "H" Level Voltage
Output "L" Level Voltage
Input Leakage Current
Symbol
V
OH
V
OL
I
LI
Condition
I
OH
= –1 mA
I
OL
= 2.1 mA
0
£
V
IN
£
V
CC
All other pins not
under test = 0 V
0
£
V
OUT
£
5.5 V
Output Disable
Min.
2.4
—
–10
Max.
—
0.4
10
mA
–10
10
Unit
V
Output Leakage Current
I
LO
4/40