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MSMBJ130Ae3

ESD Suppressors / TVS Diodes Transient Voltage Suppressor

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Microsemi
零件包装代码
DO-214AA
包装说明
R-PDSO-J2
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
HIGH RELIABILITY
最大击穿电压
159 V
最小击穿电压
144 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-J2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值反向功率耗散
600 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
1.38 W
认证状态
Not Qualified
最大重复峰值反向电压
130 V
表面贴装
YES
技术
AVALANCHE
端子面层
Matte Tin (Sn) - annealed
端子形式
J BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
MSMBG5.0A – MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
Available
600 Watt Surface Mount
Transient Voltage Suppressor
DESCRIPTION
Screening in
reference to
MIL-PRF-19500
available
The MSMB 5.0A – MSMB 170CA series of surface mount 600 watt transient voltage suppressors
provide a selection of standoff voltages (Vwm) from 5.0 to 170 V. These high-reliability devices are
available in either unidirectional or bidirectional versions. The SMBG Gull-wing design in the DO-
215AA package is ideal for visible solder connections. The SMBJ
J-bend design in the DO-
214AA package allows for greater PC board mounting density.
It is available with SnPb or
RoHS compliant matte-tin plating.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High reliability devices with wafer fabrication and assembly lot traceability.
All devices 100% surge tested.
Enhanced reliability screening in reference to MIL-PRF-19500 is also available.
Refer to
High Reliability Up-Screened Plastic Products Portfolio
for more details on the screening
options.
(See
part nomenclature
for all options.)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
3σ lot norm screening performed on standby current (I
D
).
RoHS compliant versions available.
DO-215AA
Gull-wing Package
DO-214AA
J-bend Package
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching transients & RF induced voltage pulses.
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance:
Class 1: MSB 5.0A to MSMB 120CA
Class 2: MSMB 5.0A to MSMB 60CA
Class 3: MSMB 5.0A to MSMB 30CA
Class 4: MSMB 5.0A to MSMB 15CA
Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance:
Class 1: MSMB 5.0A to MSMB 36CA
Class 2: MSMB 5.0A to MSMB 18CA
Also available in:
Commercial Grade
SMBJ5.0A – SMBJ170CAe3
T-18 package
(axial-leaded)
P6KE6.8A – P6KE200CAe3
MAXIMUM RATINGS
@ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead
(1)
Thermal Resistance, Junction to Ambient
(2)
Peak Pulse Power Dissipation
10/1000us
(1)
Rated Average Power Dissipation
@ T
L
< 25 ºC
@ T
A
= 25 ºC
Unidirectional
T
clamping
(0 volts to V
(BR)
min)
Bidirectional
(3)
Forward Surge Current
Solder Temperature @ 10 s
Symbol
T
J
and
T
STG
R
ӨJL
R
ӨJA
P
PP
P
M(AV)
Value
-65 to +150
25
90
600
5
1.38
< 100
<5
100
260
o
o
Unit
o
C
C/W
C/W
W
W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
I
FS
T
SP
ps
ns
A (pk)
o
C
Notes:
1. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see
pad layout
on last page).
2. With impulse repetition rate (duty factor) of 0.01 % or less (also
Figure 1 and 4).
3. Peak impulse of 8.3 ms half-sine wave (unidirectional only).
RF01000, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 1 of 7
MSMBG5.0A – MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating readily solderable per MIL- STD-750, method 2026.
MARKING: Part number.
POLARITY: Cathode end banded.
TAPE & REEL option: Standard per EIA-481-1-A (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 0.1 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level*
M
MA
MX
MXL
*(see
High Reliability Up-
Screened Plastic Products
Portfolio)
Surface Mount Package
600 W Power Level
Lead Form
G = Gull-Wing
J = J-Bend
SM
B
G
5.0
C
A
e3
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
+/- 5% Tolerance Level
Polarity
C = bidirectional
Blank = unidirectional
Stand-Off Voltage (V
WM
)
(see
Electrical Characteristics
table)
Symbol
V
W M
P
PP
V
(BR)
I
D
I
PP
V
C
SYMBOLS & DEFINITIONS
Definition
Working Peak (Standoff) Voltage - The maximum peak voltage that can be applied over the operating temperature
range. This is also referred to as standoff voltage.
Peak Pulse Power - Rated random recurring peak impulse power dissipation.
Breakdown Voltage - The minimum voltage the device will exhibit at a specified current.
Standby Current - The current at the rated standoff voltage (V
WM
).
Peak Pulse Current - The peak current during the impulse.
Clamping Voltage - Clamping voltage at I
PP
(peak pulse current) at the specified pulse conditions (typically shown as
maximum value).
Breakdown Current – The current used for measuring breakdown voltage V
(BR)
.
I
BR
RF01000, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 2 of 7
MSMBG5.0A – MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
ELECTRICAL CHARACTERISTICS
@ 25 ºC
REVERSE
STAND-OFF
VOLTAGE
VWM
V
5
6
6.5
7
7.5
8
8.5
9
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
BREAKDOWN VOLTAGE
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
V
9.2
10.3
11.2
12
12.9
13.6
14.4
15.4
17
18.2
19.9
21.5
23.2
24.4
26
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
PEAK PULSE
CURRENT
(see Fig. 2)
IPP
A
65.2
58.3
53.6
50
46.5
44.1
41.7
39
35.3
33
30.2
27.9
25.8
24
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.7
7.3
6.9
6.4
6.2
5.8
5.3
4.9
4.7
4.4
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.2
MAXIMUM
STANDBY
CURRENT
ID @ VWM
µA
800
800
500
200
100
50
10
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
PART NUMBER
Gull-Wing
MSMBG5.0A
MSMBG6.0A
MSMBG6.5A
MSMBG7.0A
MSMBG7.5A
MSMBG8.0A
MSMBG8.5A
MSMBG9.0A
MSMBG10A
MSMBG11A
MSMBG12A
MSMBG13A
MSMBG14A
MSMBG15A
MSMBG16A
MSMBG17A
MSMBG18A
MSMBG20A
MSMBG22A
MSMBG24A
MSMBG26A
MSMBG28A
MSMBG30A
MSMBG33A
MSMBG36A
MSMBG40A
MSMBG43A
MSMBG45A
MSMBG48A
MSMBG51A
MSMBG54A
MSMBG58A
MSMBG60A
MSMBG64A
MSMBG70A
MSMBG75A
MSMBG78A
MSMBG85A
MSMBG90A
MSMBG100A
MSMBG110A
MSMBG120A
MSMBG130A
MSMBG150A
MSMBG160A
MSMBG170A
J-Bend
MSMBJ5.0A
MSMBJ6.0A
MSMBJ6.5A
MSMBJ7.0A
MSMBJ7.5A
MSMBJ8.0A
MSMBJ8.5A
MSMBJ9.0A
MSMBJ10A
MSMBJ11A
MSMBJ12A
MSMBJ13A
MSMBJ14A
MSMBJ15A
MSMBJ16A
MSMBJ17A
MSMBJ18A
MSMBJ20A
MSMBJ22A
MSMBJ24A
MSMBJ26A
MSMBJ28A
MSMBJ30A
MSMBJ33A
MSMBJ36A
MSMBJ40A
MSMBJ43A
MSMBJ45A
MSMBJ48A
MSMBJ51A
MSMBJ54A
MSMBJ58A
MSMBJ60A
MSMBJ64A
MSMBJ70A
MSMBJ75A
MSMBJ78A
MSMBJ85A
MSMBJ90A
MSMBJ100A
MSMBJ110A
MSMBJ120A
MSMBJ130A
MSMBJ150A
MSMBJ160A
MSMBJ170A
V(BR)
V
6.40 – 7.00
6.67 – 7.37
7.22 – 7.98
7.78 – 8.60
8.33 – 9.21
8.89 – 9.83
9.44 – 10.4
10.0 – 11.1
11.1 – 12.3
12.2 – 13.5
13.3 – 14.7
14.4 – 15.9
15.6 – 17.2
16.7 – 18.5
17.8 – 19.7
18.9 – 20.9
20.0 – 22.1
22.2 – 24.5
24.4 – 26.9
26.7 – 29.5
28.9 – 31.9
31.1 – 34.4
33.3 – 36.8
36.7 – 40.6
40.0 – 44.2
44.4 – 49.1
47.8 – 52.8
50.0 – 55.3
53.3 – 58.9
56.7 – 62.7
60.0 – 66.3
64.4 – 71.2
66.7 – 73.7
71.1 – 78.6
77.8 – 86.0
83.3 – 92.1
86.7 – 95.8
94.4 – 104
100 – 111
111 – 123
122 – 135
133 – 147
144 – 159
167 – 185
178 – 197
189 – 209
@
I( BR)
mA
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
RF01000, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 3 of 7
MSMBG5.0A – MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
GRAPHS
P
PP
- Peak Pulse Power - kW
t
w
– Pulse Width µs
FIGURE 1
Peak Pulse Power vs Pulse Time
Pulse Current in Percent of I
PP
t – Time – ms
Test waveform parameters: tr=10 µs, tp=1000µs
FIGURE 2
Pulse Waveform for 10/1000 Exponential Surge
RF01000, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 4 of 7
MSMBG5.0A – MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
GRAPHS
(continued)
Peak Pulse Power (P
PP
) or continuous
Power in Percent of 25°C Rating
T
L
Lead Temperature °C
FIGURE 3
Derating Curve
C – Capacitance - Picofarads
V
(BR)
- Breakdown Voltage - Volts
FIGURE 4
Typical Capacitance vs. Breakdown Voltage
NOTE: Bidirectional capacitance is half that shown at zero volts.
RF01000, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 5 of 7
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