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MSP1N6133AUS

Trans Voltage Suppressor Diode, 500W, 98.8V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, D-5B, E-MELF-2

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Microsemi
零件包装代码
MELF
包装说明
O-LELF-R2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
HIGH RELIABILITY
最小击穿电压
123.5 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-LELF-R2
JESD-609代码
e0
最大非重复峰值反向功率耗散
500 W
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
BIDIRECTIONAL
最大功率耗散
2 W
认证状态
Not Qualified
参考标准
MIL-19500
最大重复峰值反向电压
98.8 V
表面贴装
YES
技术
AVALANCHE
端子面层
TIN LEAD
端子形式
WRAP AROUND
端子位置
END
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
1N6103US thru 1N6137AUS
and 1N6139US thru 1N6173AUS
SCOTTSDALE DIVISION
Voidless-Hermetically-Sealed Surface
Mount Bidirectional Transient Suppressors
DESCRIPTION
This surface mount series of industry recognized voidless-hermetically-
sealed Bidirectional Transient Voltage Suppressor (TVS) designs is
military qualified to MIL-PRF-19500/516 and are ideal for high-reliability
applications where a failure cannot be tolerated. They provide a Working
Peak “Standoff” Voltage selection from 5.2 to 152 Volts with two package
sizes for 500 W and 1500 W ratings. They are very robust in hard-glass
construction and also use an internal metallurgical bond identified as
Category I for high-reliability applications. Both of these are also military
qualified to MIL-PRF-19500/516 and are available as both a non suffix part
and an “A” suffix part involving different voltage tolerances as further
described in note 4 on page 2. These devices are also available in axial-
leaded packages for thru-hole mounting by deleting the “US” suffix (see
separate data sheet for 1N6103 thru 1N6173A). Microsemi also offers
numerous other TVS products to meet higher and lower peak pulse power
and voltage ratings in both through-hole and surface-mount packages.
APPEARANCE
Package “E”
(or “D-5B”)
WWW .
Microsemi
.C
OM
Package “G”
(or “D-5C”)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category
I”
metallurgical bonds
Voidless hermetically sealed glass package
JAN/TX/TXV military qualifications available per MIL-PRF-
19500/516 by adding JAN, JANTX, or JANTXV prefix
(consult factory for 1N6103US and 1N6138US)
JANS available for 1N6103AUS thru 1N6118AUS per
MIL-PRF-19500/516 as well as further options for
screening in accordance with MIL-PRF-19500 for JANS
on all others in this series by using a “MSP” prefix, e.g.
MSP6119AUS, MSP6143AUS, etc.
Axial-leaded equivalents also available (see separate
data sheet for 1N6103 thru 1N6173)
APPLICATIONS / BENEFITS
Military and other high reliability transient protection
Extremely robust construction
Extensive range in Working Peak “Standoff”
Voltage (V
WM
) from 5.7 to 152 V
Available as either 500 W or 1500 W Peak Pulse
Power (P
PP
) using two different size packages
ESD and EFT protection per IEC6100-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per select levels in
IEC61000-4-5
Square-end-cap terminals for easy placement
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with
Operating (T
J
) & Storage Temperature: -55
o
C to +175
o
C
o
Tungsten slugs
Peak Pulse Power (P
PP
) at 25 C: 500 W for 1N6103US to
TERMINATIONS: End caps are Copper with
1N6137AUS and 1500 W for 1N6139US to 1N6173AUS @
Tin/Lead (Sn/Pb) finish. Note Previous inventory
10/1000 µs (also see Figures 1,2 and 3)
had solid Silver (Ag) with Tin/Lead (Sn/Pb) finish.
Impulse repetition rate (duty factor): 0.01%
MARKING: None
Steady-State Power: 3.0 W for 1N6103US to 1N6137AUS
o
POLARITY: No polarity marking for these
and 5.0 W for 1N6139US to 1N6173AUS up to T
EC
= 150 C.
o
o
bidirectional TVSs
Linearly derate above T
EC
=150 C to zero at T
EC
=175 C.
Tape & Reel option: Standard per EIA-481-B
Steady-State Power: 2.0 W for 1N6103US to 1N6137AUS
o
and 3.0 W for 1N6139US to 1N6173AUS @ T
A
= 25 C (see
Weight: 539 mg for 500 Watt (E Package)
note and Figure 4 for linear derating at higher temperatures)
1100 mg for 1500 Watt (G Package)
o
Thermal Resistance (junction to endcap): 8.3 C/W for
See package dimensions and recommended pad
1N6103US to 1N6137AUS and 5.0
o
C/W for 1N6139US to
layouts on last page for both the “E” (D-5B) and “G”
1N6173AUS
(D-5C) size packages
o
Solder Temperatures: 260 C for 10 s (maximum)
NOTE:
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T
OP
or T
J(MAX)
is not exceeded
Copyright
©
2008
05-06-2008 REV D
1N6103US – 1N6137AUS
1N6139US – 1N6173AUS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6103US thru 1N6137AUS
and 1N6139US thru 1N6173AUS
SCOTTSDALE DIVISION
Voidless-Hermetically-Sealed Surface
Mount Bidirectional Transient Suppressors
ELECTRICAL CHARACTERISTICS
INDUSTRY TYPE
NUMBER
(Note 4)
P
PP
Rating
500W
1500W
1N6103AUS
1N6139AUS
1N6104AUS
1N6140AUS
1N6105AUS
1N6141AUS
1N6106AUS
1N6142AUS
1N6107AUS
1N6143AUS
1N6108AUS
1N6144AUS
1N6109AUS
1N6145AUS
1N6110AUS
1N6146AUS
1N6111AUS
1N6147AUS
1N6112AUS
1N6148AUS
1N6113AUS
1N6149AUS
1N6114AUS
1N6150AUS
1N6115AUS
1N6151AUS
1N6116AUS
1N6152AUS
1N6117AUS
1N6153AUS
1N6118AUS
1N6154AUS
1N6119AUS
1N6155AUS
1N6120AUS
1N6156AUS
1N6121AUS
1N6157AUS
1N6122AUS
1N6158AUS
1N6123AUS
1N6159AUS
1N6124AUS
1N6160AUS
1N6125AUS
1N6161AUS
1N6126AUS
1N6162AUS
1N6127AUS
1N6163AUS
1N6128AUS
1N6164AUS
1N6129AUS
1N6165AUS
1N6130AUS
1N6166AUS
1N6131AUS
1N6167AUS
1N6132AUS
1N6168AUS
1N6133AUS
1N6169AUS
1N6134AUS
1N6170AUS
1N6135AUS
1N6171AUS
1N6136AUS
1N6172AUS
1N6137AUS
1N6173AUS
MINIMUM
BREAKDOWN
VOLTAGE
V
(BR)
@ I
(BR)
Volts
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
104.5
114.0
123.5
142.5
152.0
171.0
190.0
mA
175
150
150
125
125
100
100
75
75
65
65
50
50
50
40
40
30
30
30
25
25
20
20
20
20
15
15
12
12
10
10
8
8
5
5
RATED
STANDOFF
VOLTAGE
V
WM
Volts
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
86.6
91.2
98.8
114.0
121.6
136.8
152.0
MAXIMUM
STANDBY
CURRENT
I
D
@ V
WM
500W
1500W
uA
uA
50
300
20
100
20
100
20
100
20
20
20
20
20
20
20
20
20
20
1
10
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
MAXIMUM
CLAMPING
VOLTAGE
V
C
@
I
PP
Volts
11.2
12.1
13.4
14.5
15.6
16.9
18.2
21.0
22.3
25.1
27.7
30.5
33.3
37.4
41.6
45.7
49.9
53.6
59.1
64.6
70.1
77.0
85.3
97.1
103.1
112.8
125.1
137.6
151.3
165.1
178.8
206.3
218.4
245.7
273.0
MAXIMUM
PEAK PULSE
CURRENT I
PP
500 W
Amps
44.6
41.3
37.3
34.5
32.0
29.6
27.5
23.8
22.4
19.9
18.0
16.4
15.0
13.4
12.0
10.9
10.0
9.3
8.5
7.7
7.1
6.5
5.9
5.1
4.8
4.4
4.0
3.6
3.3
3.0
2.8
2.4
2.3
2.0
1.8
1500 W
Amps
133.9
124.0
111.9
103.4
96.2
88.8
82.4
71.4
67.3
59.8
54.2
49.2
45.0
40.1
36.0
32.8
30.1
28.0
25.4
23.2
21.4
19.5
17.6
15.4
14.5
13.3
12.0
10.9
9.9
9.1
8.4
7.3
6.9
6.1
5.5
MAXIMUM
TEMP.
COEF. OF
V
(BR)
%/ C
.06
.06
.06
.07
.07
.07
.08
.08
.08
.085
.085
.085
.09
.09
.09
.095
.095
.095
.095
.095
.095
.095
.100
.100
.100
.100
.100
.100
.100
.100
.105
.105
.105
.110
.110
o
WWW .
Microsemi
.C
OM
Notes:
1.
2.
3.
4.
Note: 4
1
1
1
2
3
1
2
3
Applies to both 500W and 1500W series for devices shown (see note 4)
Applies only to 500W series (1N6103US thru 1N6137US)
Applies only to 1500W series (1N6139US thru 1N6173AUS)
Part number without the A suffix has 5% higher V
C
, 5% lower minimum V
(BR)
, and 5% lower I
PP
.
SYMBOLS & DEFINITIONS
Definition
1
1N6103US – 1N6137AUS
1N6139US – 1N6173AUS
Symbol
V
BR
V
WM
I
D
V
C
P
PP
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
Maximum clamping voltage at specified I
PP
(Peak Pulse Current) at the specified pulse conditions.
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I
PP
.
Copyright
©
2008
05-06-2008 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N6103US thru 1N6137AUS
and 1N6139US thru 1N6173AUS
SCOTTSDALE DIVISION
Voidless-Hermetically-Sealed Surface
Mount Bidirectional Transient Suppressors
GRAPHS
WWW .
Microsemi
.C
OM
PULSE TIME (
tp
)
FIGURE 1
PEAK PULSE POWER vs. PULSE TIME
MAX PEAK PULSE POWER (P
PP
) OR
CURRENT (I
PP
) IN PERCENT OF MAX RATINGS
Peak Pulse Power (P
PP
)
100
1000
10,000
JUNCTION TEMPERATURE (T
J
) IN C
o
FIGURE 2
PULSE DERATING CURVE
(prior to impulse)
PULSE CURRENT (I
PP
)
IN PERCENT OF I
PP
1N6103US – 1N6137AUS
1N6139US – 1N6173AUS
TIME (t) IN MILLISECONDS
FIGURE 3
PULSE WAVE FORM
Copyright
©
2008
05-06-2008 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
1N6103US thru 1N6137AUS
and 1N6139US thru 1N6173AUS
SCOTTSDALE DIVISION
Voidless-Hermetically-Sealed Surface
Mount Bidirectional Transient Suppressors
WWW .
Microsemi
.C
OM
MAXIMUM STEADY-STATE POWER IN WATTS
FIGURE 4
STEADY-STATE DERATING CURVE
FOR FREE-AIR MOUNTING ON PC BOARD
PACKAGE DIMENSIONS and PAD LAYOUTS
1N6103US – 1N6137AUS
1N6139US – 1N6173AUS
E-MELF-PKG (D-5B)
for 1N6103US thru 1N6137AUS (500 W)
Note:
If mounting requires adhesive separate from the solder,
an additional 0.080 inch diameter contact may be placed in the
center between the pads as an optional spot for cement as
shown in the pad layout.
Copyright
©
2008
05-06-2008 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
1N6103US thru 1N6137AUS
and 1N6139US thru 1N6173AUS
SCOTTSDALE DIVISION
Voidless-Hermetically-Sealed Surface
Mount Bidirectional Transient Suppressors
PACKAGE DIMENSIONS and PAD LAYOUTS
WWW .
Microsemi
.C
OM
G-MELF-PKG (D-5C)
for 1N6139US thru 1N6173AUS (1500 W)
Note:
If mounting requires adhesive separate from the solder,
an additional 0.090 inch diameter contact may be placed in the
center between the pads as an optional spot for cement as
shown in the pad layout.
1N6103US – 1N6137AUS
1N6139US – 1N6173AUS
Copyright
©
2008
05-06-2008 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 5
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