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MSPSMBJ2K4.0

Trans Voltage Suppressor Diode, 300W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Microsemi
零件包装代码
DO-214AA
包装说明
R-PDSO-C2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
最小击穿电压
5 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-C2
JESD-609代码
e0
湿度敏感等级
1
最大非重复峰值反向功率耗散
300 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
1.38 W
认证状态
Not Qualified
最大重复峰值反向电压
4 V
表面贴装
YES
技术
AVALANCHE
端子面层
TIN LEAD
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
SMBJ2K3.0 thru SMBJ2K5.0
SMBG2K3.0 thru SMBG2K5.0
SCOTTSDALE DIVISION
UNIDIRECTIONAL LOW VOLTAGE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
APPEARANCE
WWW .
Microsemi
.C
OM
DESCRIPTION
The SMBJ2K3.0-5.0 or SMBG2K3.0-5.0 series of surface mount 2000 Watt
unidirectional Transient Voltage Suppressors (TVSs) provide low voltage
transient protection in a Working Standoff Voltage (V
WM
) selections from 3.0
to 5.0 volts. Response time of clamping action is virtually instantaneous and
may also be used for protection from ESD or EFT per IEC61000-4-2 and
IEC61000-4-4, or for inductive switching environments and induced RF.
They can also be used for protecting other sensitive components from
secondary lightning effects per IEC61000-4-5 and class levels defined
herein. Microsemi also offers numerous other TVS products to meet higher
and lower power demands and special applications. Also available in military
equivalent screening levels by adding a prefix identifier as further described
in the Features section. Microsemi also offers numerous other TVS products
to meet higher and lower power applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Suppresses transients up to 2000 watts @ 8/20 µs (see
Figure 1 and 2)
Fast response
Optional 100%
screening for avionics grade
is available
by adding MA prefix to part number for added 100%
temperature cycle -55
o
C to +125
o
C (10X) as well as surge
(3X) and 24 hours HTRB with post test V
Z
& I
R
(in the
operating direction for unidirectional or both directions for
bidirectional)
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, JANTXV, and JANS are available by
adding MQ, MX, MV, or MSP prefixes respectively to part
numbers.
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B
Consult factory for bidirectional options
APPLICATIONS / BENEFITS
Selections for 3.0 to 5.0 V Working Peak Standoff
(V
WM
) voltage
Economical unidirectional TVS series in surface
mount with flat handling surface for accurate
placement
Voltage and reverse (leakage) current lowest
available
Protects sensitive components such as IC’s,
2
CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance for Class 1
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
o
C: 2000 watts at 8/20
µs
or 300 Watts at 10/1000
µs
(also see Figure 1 and 4)
Clamping Voltage at 10 Amps @ 8/20
µs
shown on page 2
Impulse repetition rate (duty factor): 0.01% maximum
t
clamping
(0 volts to
V
(BR)
min.): < 100 ps
Operating and Storage temperature: -65
o
C to +150
o
C
Thermal resistance: 25
º
C/W junction to lead, or 90
º
C/W
junction to ambient when mounted on FR4 PC board (1oz
Cu) with recommended footprint (see last page)
Steady-State Power dissipation: 5 watts at T
L
= 25
o
C, or
1.38 watts at T
A
= 25
º
C when mounted on FR4 PC board
with recommended footprint
Forward Voltage at 25
o
C: 3.5 Volts maximum @ 30 Amp
peak impulse of 8.3 ms half-sine wave (unidirectional only)
Solder temperatures: 260
o
C for 10 s (maximum)
Copyright
2002
5-28-2004 REV F
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead plated over copper and readily
solderable per MIL-STD-750, method 2026
MARKING: Body marked without SMBJ or SMBG
part number prefix, e.g. 2K3.0, 2K3.3, 2K4.0, etc.
POLARITY: Band denotes cathode
WEIGHT: 0.1 grams (approximate)
TAPE & REEL option: Standard per EIA-481-1-A
with 12 mm tape, 750 per 7 inch reel or 2500 per
13 inch reel (add “TR” suffix to part number)
See package dimensions on last page
SMBG&J2K3.0-5.0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
SMBJ2K3.0 thru SMBJ2K5.0
SMBG2K3.0 thru SMBG2K5.0
SCOTTSDALE DIVISION
UNIDIRECTIONAL LOW VOLTAGE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS
MICROSEMI
PART
NUMBER
(add SMBJ or
SMBG prefix)
2K3.0
2K3.3
2K4.0
2K4.5
2K5.0
BREAKDOWN VOLTAGE
Minimum
BREAKDOWN
CURRENT
RATED
STANDOFF
VOLTAGE
MAX
STANDBY
CURRENT
MAX
CLAMPING
VOLTAGE
PEAK PULSE
CURRENT
TEMPERATURE
COEFFICIANT
of
V
(BR)
V
(BR)
V
4.3
4.6
5.0
5.4
5.9
I
(BR)
mA
50
50
50
50
50
V
WM
V
3.0
3.3
4.0
4.5
5.0
I
D
@ V
WM
µA
1500
700
400
50
5
V
C
@ I
PP
V
5.4
5.8
6.3
6.6
7.6
I
PP
A
10
10
10
10
10
α
V(BR)
o
%/
C
+0/-0.05
±0.025
±0.030
±0.040
+0.050
Symbol
V
WM
P
PP
V
(BR)
I
D
SYMBOLS & DEFINITIONS
Definition
Symbol
Working Peak (Standoff) Voltage
Peak Pulse Power
Breakdown Voltage
Standby Current
I
PP
V
C
Definition
I
(BR)
Peak Pulse Current
Clamping Voltage
Breakdown Current for V
(BR)
GRAPHS
P
PP
– Peak Pulse Power – kW
tw – Pulse Width -
µs
Test waveform parmeters: tr=8
µs,
tp=20
µs
FIGURE 1
Peak Pulse Power vs. Pulse Time
FIGURE 2
Pulse Waveform for
8/20 µs Exponential Surge
SMBG&J2K3.0-5.0
Copyright
2002
5-28-2004 REV F
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
SMBJ2K3.0 thru SMBJ2K5.0
SMBG2K3.0 thru SMBG2K5.0
SCOTTSDALE DIVISION
UNIDIRECTIONAL LOW VOLTAGE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
Peak Pulse Power (
P
PP
) or continuous
o
Power in Percent of 25 C Rating
WWW .
Microsemi
.C
OM
Test waveform parmeters: tr=10
µs,
tp=1000
µs
FIGURE 3
Pulse Waveform for
10/1000 µs Exponential Surge
FIGURE 4 - Derating Curve
T
L
Lead Temperature C
o
PACKAGE DIMENSIONS
SMBJ
SMBG
MIN
MAX
MIN
MAX
A
.077
.083
1.96
2.10
B
C
D
E
F
.160
.130 .205
.075
.235
.180
.155 .220
.095
.255
DIMENSIONS IN MILLIMETERS
4.06
3.30 5.21
1.90
5.97
4.57
3.94 5.59
2.41
6.48
K
.015
.030
.381
.762
L
.030
.060
.760
1.520
A
B
C
SMBJ
INCHES
.260
.085
.110
SMBG
INCHES
0.320
0.085
0.110
mm
6.60
2.16
2.79
SMBG&J2K3.0-5.0
A
B
C
mm
8.13
2.16
2.79
Copyright
2002
5-28-2004 REV F
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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