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MSS30,148-H20

Mixer Diode, Low Barrier, Millimeter Wave Band, Silicon, HERMETIC SEALED, CASE H20, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:MACOM

厂商官网:http://www.macom.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
MACOM
Reach Compliance Code
compliant
ECCN代码
EAR99
JESD-609代码
e4
认证状态
Not Qualified
端子面层
Gold (Au)
Base Number Matches
1
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MSS30,000 Series
Low Barrier Silicon
Schottky Diodes
Description
The Aeroflex / Metelics MSS30,000 Series of Schottky diodes
are fabricated on N-Type epitaxial substrates using proprietary
processes that yield the highest FCOs in the industry. Optimum
mixer performance is obtained with LO power of -3 dBm to +3
dBm per diode.
Features
V
F
, R
D
and C
J
matching options
Chip, beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Operation Temperature
Storage Temperature
Power Dissipation
Soldering Temperature (Packaged)
Beam Lead Pull Strength
Rated V
BR
50 mA
-65 ºC to +1 ºC
50
-65 ºC to +1 ºC
50
100 mW per junction at T
A
= 25 ºC, derate
linearly to zero at T
A
= +1 ºC
50
+ 260 ºC for 5 sec.
4 grams minimum
Rating
Chip
Electrical Specifications,
T
A
= 25 ºC
V
F
V
BR
MIN
C
J
TYP / MAX
R
S
TYP
R
D
MAX
F
CO
TYP
Model
MSS30,046-C1
5
MSS30,050-C1
5
Test
Conditions
Configuration
TYP
Outline
V
V
pF
GHz
Single Junction
Single Junction
0.29
0.27
I
F
= 1
mA
2
2
I
R
=
10
μA
0.10 / 0.1
2
0.1 / 0.18
5
V
R
= 0 V
F = 1 MHz
10
6
18
1
5
160
1
75
C1
5
C1
5
I
F
= 5 mA
Revision Date: 05/20/05
MSS30,000 Series
Low Barrier Silicon Schottky Diodes
Beam Lead
Electrical Specifications,
T
A
= 25 ºC
V
F
V
BR
MIN
C
J
TYP / MAX
R
S
TYP
R
D
MAX
F
CO
TYP
Model
MSS30,1
42-B10B
MSS30,1
48-B10B
MSS30,1
54-B10B
MSS30,242-B20
MSS30,248-B20
MSS30,254-B20
MSS30,442-B41
MSS30,448-B41
MSS30,454-B40
Configuration
Single Junction
Single Junction
Single Junction
Series Tee
Series Tee
Series Tee
Ring Quad
Ring Quad
Ring Quad
TYP
Outline
B10B
B10B
B10B
B20
B20
B20
B41
B41
B40
V
.29
.27
.25
.29
.27
.25
.29
.27
.25
I
F
= 1 mA
V
2
2
2
2
2
2
2
2
2
I
R
=
10
μA
pF
0.07 / 0.10
0.1 / 0.1
2
5
0.22 / 0.25
0.07 / 0.10
0.1 / 0.1
2
5
0.22 / 0.25
0.07 / 0.10
0.1 / 0.1
2
5
0.22 / 0.25
V
R
= 0 V
F = 1 MHz
GHz
13
7
3
13
7
3
13
7
3
I
F
= 5 mA
22
1
5
1
2
22
1
5
1
2
22
1
5
1
2
1
75
190
240
1
75
190
240
1
75
190
240
Test
Conditions
Packaged
Electrical Specifications,
T
A
= 25 ºC
V
F
V
BR
MIN
C
T
TYP / MAX
R
S
TYP
R
D
MAX
F
CO
TYP
Model
MSS30,046-P55
MSS30,046-P86
MSS30,050-P55
MSS30,050-P86
MSS30,1
42-E25
MSS30,1
42-H20
MSS30,1
48-E25
MSS30,1
48-H20
MSS30,1
54-E25
MSS30,1
54-H20
MSS30,242-E35
MSS30,242-H30
MSS30,248-E35
MSS30,248-H30
MSS30,254-E35
MSS30,254-H30
MSS30,442-E45
MSS30,448-E45
MSS30,454-E45
MSS30,454-H40
Configuration
Single Junction
Single Junction
Single Junction
Single Junction
Single Junction
Single Junction
Single Junction
Single Junction
Single Junction
Single Junction
Series Tee
Series Tee
Series Tee
Series Tee
Series Tee
Series Tee
Ring Quad
Ring Quad
Ring Quad
Ring Quad
TYP
Outline
P55
P86
P55
P86
E25
H20
E25
H20
E25
H20
E35
H30
E35
H30
E35
H30
E45
E45
E45
H40
V
0.29
0.29
0.27
0.27
0.29
0.29
0.27
0.27
0.25
0.25
0.29
0.29
0.27
0.27
0.25
0.25
0.29
0.27
0.25
0.25
I
F
= 1 mA
V
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
I
R
=
10
μA
pF
0.23 / 0.30
0.27 / 0.33
0.28 / 0.35
0.32 / 0.38
0.20 / 0.26
0.25 / 0.31
0.25 / 0.31
0.30 / 0.36
0.35 / 0.41
0.40 / 0.46
0.1 / 0.21
5
0.25 / 0.31
0.25 / 0.31
0.30 / 0.36
0.35 / 0.41
0.40 / 0.46
0.1 / 0.21
5
0.20 / 0.26
0.25 / 0.31
0.25 / 0.31
V
R
= 0 V
F = 1 MHz
GHz
10
10
6
6
13
13
7
7
3
3
13
13
7
7
3
3
13
7
3
3
I
F
= 5 mA
18
18
1
5
1
5
22
22
1
5
1
5
1
2
1
2
22
22
1
5
1
5
1
2
1
2
22
1
5
1
2
1
2
160
160
1
75
1
75
1
75
1
75
190
190
240
240
1
75
1
75
190
190
240
240
1
75
190
240
240
Test
Conditions
2
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
Revision Date: 05/20/05
MSS30,000 Series
Low Barrier Silicon Schottky Diodes
Typical Performance,
T
A
= 25 ºC
Figure 1.
Forward Voltage vs. Current
Figure 2.
Reverse Current vs. Voltage
se
vs. Volta
s
V
f
(V)
I
R
I
F
V
R
(V)
Figure 3.
NF & Z
IF
vs. LO Power
F
Figure 4.
Smith Chart - 50
Reference
NF (dB)
L.O. Power (dBm)
Outline Drawings
C15
17 [.432]
13 [.330]
Top Contact
1.1 [0.028]
0.9 [0.023]
17 [.432]
13 [.330]
33 [0.838]
28 [0.711]
12 [0.305]
9 [0.229]
B1
0B
10 [0.254]
6 [0.152]
0.55 [0.014]
0.25 [0.006]
Z
IF
( )
F
B20
B20
14.5 [0.368]
10.5 [0.267]
C a tho d e
0.55 [0.014]
0.25 [0.006]
10 [0.254] 2 Pls
6 [0.152]
3.5 [0.089]
1.2 [0.030]
3.5 [0.089]
1.2 [0.030]
CL
23 [0.584]
19 [0.483]
7 [0.178]
4 [0.102]
3 Pls
Ba c k
Back
12 [0.305]
9 [0.229]
12 [0.305]
8 [0.203]
Le ss tha n 0.5 [0.013]
6 [0.152]
4 [0.102]
Back Contact
Less Than 0.5 [0.013]
Ba c k Vie w
Back View
Lp = 0.1nH
Cp = 0.015pF
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
3
Revision Date: 05/20/05
MSS30,000 Series
Low Barrier Silicon Schottky Diodes
Outline Drawings
B40
B40
21.5 [0.546]
17.5 [0.445]
S
Q
B41
0.55 [0.014]
0.25 [0.006]
6 [0.152]
4 [0.102]
4 Pls
3.5 [0.089]
1.2 [0.030]
B41
13.5 [0.343]
10.5 [0.267]
S
Q
0.55 [0.014]
0.25 [0.006]
4.75 [0.121]
3.25 [0.083]
4 Pls
3.5 [0.089]
1.2 [0.030]
CL
Ba c k
Ba c k
8.75 [0.222]
4.75 [0.121]
4 Pls
Ba c k Vie w
12 [0.305]
8 [0.203]
4 Pls
Le ss tha n 0.5 [0.013]
8.5 [0.216]
5.5 [0.140]
4 Pls
Ba c k Vie w
Le ss tha n 0.5 [0.013]
CL
E25
(non-hermetic)
5
07pF
4n H
E35
(non-hermetic)
E35
Cp=0.07pF
Lp=0.4nH
E45
(non-hermetic)
E45
Cp=0.07pF
Lp=0.4nH
P55
(hermetic)
55 [1.397]
51 [1.295]
Dia.
55 [1.397] SQ.
45 [1.143]
55 [1.397] SQ.
45 [1.143]
18 [0.457] 3 Pls
12 [0.305]
55 [1.397] SQ.
45 [1.143]
Cut Lead is Cathode
18 [0.457] 4 Pls
12 [0.305]
18 [0.457]
12 [0.305]
Epoxy
50 [1.270] Max.
5 [0.127] 2Pls
3 [0.076]
Ceramic
Body
55 [1.397]
45 [1.143]
Epoxy
14 [0.356]
8 [0.203]
Ceramic
50 [1.270] Max.
Epoxy
5 [0.127] 3 Pls
3 [0.076]
50 [1.270] Max.
5 [0.127] 4 Pls
3 [0.076]
80 [2.032] Min.
14 [0.356]
8 [0.203]
80 [2.032] Min.
Heatsink is anode
14 [0.356]
8 [0.203]
80 [2.032] Min.
Ceramic
Ceramic
H20
(hermetic)
102 [2.591] Dia
81 [2.057]
H30
(hermetic)
H30
Cp=0.18pF
Lp=0.5nH
102 [2.591] Dia
81 [2.057]
H40
Cp=0.18pF
Lp=0.5nH
H40
20
=0.5nH
=0.18pF
23 [0.584]
17 [0.432]
Cut lead is Cathode
23 [0.584]
17 [0.432]
(hermetic)
102 [2.591] Dia
81 [2.057]
P86
P86
Cp=0.15pF
Lp=1nH
64 [1.626] Dia.
60 [1.524]
23 [0.584]
17 [0.432]
(hermetic)
64 [1.626]
60 [1.524]
15 [0.381]
10 [0.254]
Cut lead is Cathode
104 [2.642]
92 [2.337]
Square
130 [3.302]
Min. 2 Pls
8 [0.203]
4 [0.102]
6 [0.152]
3 [0.076]
104 [2.642]
92 [2.337]
Square
8 [0.203]
4 [0.102]
130 [3.302]
Min. 3 Pls
6 [0.152]
3 [0.076]
104 [2.642]
92 [2.337]
Square
130 [3.302]
Min. 4 Pls
210 [5.334]
190 [4.826]
Ceramic
Body
82 [2.083]
70 [1.778]
8 [0.203]
4 [0.102]
6 [0.152]
3 [0.076]
84 [2.134] Dia.
78 [1.981]
35 [0.889]
25 [0.635]
35 [0.889]
25 [0.635]
35 [0.889]
25 [0.635]
Heatsink is anode
Aeroflex / Metelics
Aeroflex Microelectronic Solutions
975 Stewart Drive, Sunnyvale, CA 94085
TEL: 408-737-8181
Fax: 408-733-7645
www.aeroflex-metelics.com
sales@aeroflex-metelics.com
Aeroflex / Metelics, Inc. reserves the right to make changes to any products
and services herein at any time without notice. Consult Aeroflex or an
authorized sales representative to verify that the information in this data
sheet is current before using this product. Aeroflex does not assume any
responsibility or liability arising out of the application or use of any product
or service described herein, except as expressly agreed to in writing by
Aeroflex; nor does the purchase, lease, or use of a product or service from
Aeroflex convey a license under any patent rights, copyrights, trademark
rights, or any other of the intellectual rights of Aeroflex or of third parties.
Copyright 2003 Aeroflex / Metelics. All rights reserved.
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused.
Revision Date: 05/20/05
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