THIN FILM CHIP RESISTORS
MSTF 2 SERIES
DAT
MECHANICAL DATA
SIZE
SUBSTRATE
SUBSTRATE
RESISTOR
BOND PADS
BACKSIDE SURFACE
0.020" x 0.020" (±0.003") x 0.010" (±0.003")
SILICON, ALUMINA, QUARTZ, OR GLASS
TANT
ANTALUM
NICHROME OR TANTALUM NITRIDE
15,000 Å MINIMUM GOLD
10,000 Å MINIMUM ALUMINUM OPTIONAL
SUBSTRATE
BARE SUBSTRATE
GOLD BACK OPTIONAL
0.020"
A
DAT
ELECTRICAL DATA
0.020"
RESISTANCE RANGE
RESISTANCE
SILICON, QUARTZ, GLASS
ALUMINA
ABSOLUTE TOLERANCE
T.C.R.
SILICON, QUARTZ, GLASS
ALUMINA
NICHROME
1.5MΩ
2
Ω
TO 1.5M
Ω
300KΩ
2
Ω
TO 300K
Ω
0.1%, 0.5%, 1%, 2%, 5%, 10%
TO 0.01% AVAILABLE
±50ppm/°C STANDARD
STANDARD
OPTIONAL TO ±5ppm/°C
STANDARD
±50ppm/°C STANDARD
OPTIONAL TO ±25ppm/°C
TANTALUM NITRIDE
ANTALUM
1.5MΩ
2
Ω
TO 1.5M
Ω
300KΩ
2
Ω
TO 300K
Ω
0.1%, 0.5%, 1%, 2%, 5%, 10%
TO 0.01% AVAILABLE
±150ppm/°C STANDARD
STANDARD
OPTIONAL TO ±10ppm/°C
STANDARD
±150ppm/°C STANDARD
OPTIONAL TO±25ppm/°C
Minimum bonding area
for < 100 Ohm resistance.
Layout varies with value.
DAT
SERIES DATA
CURRENT NOISE
DIELECTRIC BREAKDOWN
INSULATION RESISTANCE
INSULATION RESISTANCE
OPERATING VOLT
OPERATING VOLTAGE
RATING
POWER RATING
SILICON, ALUMINA
QUARTZ, GLASS
SHORT TERM OVERLOAD
HIGH TEMP EXPOSURE
THERMAL SHOCK
RESISTANCE
MOISTURE RESISTANCE
STABILITY
STABILITY
OPERATING
OPERATING TEMP RANGE
STRAY DISTRIBUTED
CAPACIT
ACITANCE
CAPACITANCE
TaN
SILICON / NiCr OR TaN
ALUMINA / NiCr
TaN
ALUMINA / TaN
QUARTZ / NiCr
TaN
QUARTZ / TaN
GLASS / NiCr
TaN
GLASS / TaN
101Ω
250KΩ
101
Ω
TO 250K
Ω
: -40dB
100Ω
250KΩ
≤
100
Ω
,
≥
250K
Ω
: -30dB
400V MIN.
10
12
Ω
MIN.
100 V MAX.
DERATED LINEARLY
250mW (70°C DERATED LINEARLY TO 150°C) P = E
2
/R
DERATED LINEARLY
50mW (70°C DERATED LINEARLY TO 150°C) P = E
2
/R
RATED
25°
±0.
0.2
5X RATED POWER, 25°C, 5 SEC., ±0.25% MAX.
∆
R/R: ±0.1% MSI TYPICAL
±0.25%
0.03
03%
150°C, 100 HRS., ±0.25% MAX.
∆
R/R: ±0.03% MSI TYPICAL
107F, ±0.25%
MIL-STD 202, METHOD 107F, ±0.25% MAX.
∆
R/R: ±0.1% MSI TYPICAL
0.1
±0.
0.5
MIL-STD 202, METHOD 106, ±0.5% MAX.
∆
R/R: ±0.1% MSI TYPICAL
70°C,
POWER, ±0.5%
1000 HRS., 70°C, 100% POWER, ±0.5% MAX.
∆
R/R: ±0.1% MSI TYPICAL
-55
-55°C TO +150°C
2pF
0.06pF
0.08pF
0.02pF
0.05pF
0.04pF
0.06pF
DESIGNATION
PART NUMBER DESIGNATION
MSTF 2
SERIES
X
SUBSTRATE
SUBSTRATE
A
G
Q
S
=
=
=
=
Alumina
Glass
Quartz
Silicon
X
RESISTIVE
FILM
N = Nichrome
T = Tantalum
Nitride
XXXXX
OHMIC VALUE
5-Digit
Number: 1st
4 Digits Are
Significant
With "R" As
Decimal
Point When
Required.
5th Digit
Represents
Number of
Zeros.
X
TOLERANCE
S
X
Q
B
D
F
G
J
K
= 0.01%*
= 0.02%*
= 0.05%*
= 0.1%
= 0.5%
= 1%
= 2%
= 5%
= 10%
A
B
C
D
E
X
OPTION
= ±50ppm/°C
= ±25ppm/°C
= ±10ppm/°C
= ±5ppm/°C
= Aluminum
Bond Pads
F = ±100ppm/°C
G = Gold Bond
Pads Std.**
GB = Gold Backside
MINI-SYSTEMS, INC.
THIN FILM DIVISION
45 FRANK MOSSBERG DRIVE, ATTLEBORO, MA 02703
508-226-2111 FAX: 508-226-2211
DCN TF 101-D-0698
EXAMPLE: MSTF 2SN-50R00F-GB = 0.020" x 0.020", Silicon Substrate,
Resistor, 50Ω
Tol.,
Nichrome Resistor, 50
Ω
, ±1% Tol., ±50 ppm/°C, Gold Backside.
* Value dependent on Alumina. Consult sales.
**Always used when no other option is required.
9
FPGA/CPLD