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MSV40075-E28

KU BAND, 1.88pF, 60V, SILICON, VARIABLE CAPACITANCE DIODE, CERAMIC PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:Cobham Semiconductor Solutions

器件标准:

下载文档
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Cobham Semiconductor Solutions
包装说明
O-CDSO-F2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
最小击穿电压
60 V
配置
SINGLE
二极管电容容差
10.64%
标称二极管电容
1.88 pF
二极管元件材料
SILICON
二极管类型
VARIABLE CAPACITANCE DIODE
频带
KU BAND
JESD-30 代码
O-CDSO-F2
JESD-609代码
e4
元件数量
1
端子数量
2
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
ROUND
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.1 W
认证状态
Not Qualified
最小质量因数
2200
表面贴装
YES
端子面层
GOLD
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
60 V Silicon Varactor Diodes
MSV40,000 Series
Description
The work horse of varactors these diodes are built tough with
fully passivated mesa construction and Aeroflex / Metelics tri-
metallization. Featuring a nominal gamma of 0.46 these diodes
find application in tunable filters and oscillators up to 18 GHz.
Features
0 to 60 Volt tuning voltage
Tuning ratios up to 6.5 (typical)
Screening per MIL-PRF-19500
and MIL-PRF-35834 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Power Dissipation
Chip
E28, E28X & 0805-2
H20, P55 & T86
Operating Temperature
Chip
E28, E28X & 0805-2
H20, P55 & T86
Storage Temperature
Soldering Temperature
Chip
Packaged
60 V
100 mA
250 mW at T
C
= 25
°C,
derate linearly to zero at T
C
= +200
°C
100 mW at T
A
= 25
°C,
derate linearly to zero at T
A
= +1
°C
50
100 mW at T
A
= 25
°C,
derate linearly to zero at T
A
= +200
°C
-65
°C
to +200
°C
-65
°C
to +1
°C
50
-65
°C
to +200
°C
Same as operating temperature.
+320
°C
for 10 seconds
+260
°C
peak per JEDEC J-STD-20C
Rating
Chip
Electrical Specifications,
T
A
= 25
°C
Model
MSV40,060
MSV40,064
MSV40,067
MSV40,069
MSV40,075
MSV40,082
MSV40,087
MSV40,092
Test Conditions
V
BR
MIN
V
60
60
60
60
60
60
60
60
I
R
=
10 A
C
J
MIN
pF
0.36
0.54
0.72
0.90
1.62
3.42
5.22
8.82
Tuning Ratio
MAX
pF
0.44
0.66
0.88
1.10
1.98
4.18
6.38
10.78
NOM
pF
0.4
0.6
0.8
1.0
1.8
3.8
5.8
9.8
V
R
= 4 V
F = 1 MHz
MIN
5.0
5.0
5.0
6.0
6.0
6.0
6.0
6.0
MAX
5.5
5.5
5.5
6.5
6.5
6.5
6.5
6.5
Q
MIN
3,000
2,600
2,600
2,400
2,200
1,500
1,500
1,500
V
R
= 4 V
F = 50
MHz
R
S
MAX
2.7
2.0
1.6
1.2
0.8
0.5
0.4
0.3
F = 1 GHz
Outline
C1
2
C1
2
C1
2
C1
2
C1
2
C1
2
C1
2
C22
V
R
= 0 V & V
R
= 60 V
F = 1 MHz
Revision Date: 10/05/05
60 V Silicon Varactor Diodes
MSV40,000 Series
Packaged
Electrical Specifications,
T
A
= 25
°C
V
BR
C
T
MIN
pF
0.42
0.50
0.50
0.41
0.45
0.60
0.68
0.68
0.59
0.63
0.78
0.86
0.86
0.77
0.81
0.96
1.04
1.04
0.95
0.99
1.68
1.76
1.76
1.67
1.71
3.48
3.56
3.56
3.47
3.51
5.28
5.36
5.36
5.27
5.31
8.88
8.96
8.96
8.87
8.91
Tuning Ratio
MAX
pF
0.54
0.66
0.66
0.51
0.61
0.76
0.88
0.88
0.73
0.83
0.98
1.10
1.10
0.95
1.05
1.20
1.32
1.32
1.1
7
1.27
2.08
2.20
2.20
2.05
2.1
5
4.28
4.40
4.40
4.25
4.35
6.48
6.60
6.60
6.45
6.55
10.88
1
1.00
1
1.00
10.85
10.95
Model
MSV40,060-E28 / 28 X
MSV40,060-H20
MSV40,060-T86
MSV40,060-0805-2
MSV40,060-P55
MSV40,064-E28 / 28 X
MSV40,064-H20
MSV40,064-T86
MSV40,064-0805-2
MSV40,064-P55
MSV40,067-E28 / 28 X
MSV40,067-H20
MSV40,067-T86
MSV40,067-0805-2
MSV40,067-P55
MSV40,069-E28 / 28 X
MSV40,069-H20
MSV40,069-T86
MSV40,069-0805-2
MSV40,069-P55
MSV40,075-E28 / 28 X
MSV40,075-H20
MSV40,075-T86
MSV40,075-0805-2
MSV40,075-P55
MSV40,082-E28 / 28 X
MSV40,082-H20
MSV40,082-T86
MSV40,082-0805-2
MSV40,082-P55
MSV40,087-E28 / 28 X
MSV40,087-H20
MSV40,087-T86
MSV40,087-0805-2
MSV40,087-P55
MSV40,092-E28 / 28 X
MSV40,092-H20
MSV40,092-T86
MSV40,092-0805-2
MSV40,092-P55
MIN
V
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
I
R
=
10 A
NOM
pF
0.48
0.58
0.58
0.46
0.53
0.68
0.78
0.78
0.66
0.73
0.88
0.98
0.98
0.86
0.93
1.08
1.18
1.18
1.06
1.1
3
1.88
1.98
1.98
1.86
1.93
3.88
3.98
3.98
3.86
3.93
5.88
5.98
5.98
5.86
5.93
9.88
9.98
9.98
9.86
9.93
V
R
= 4 V
F = 1 MHz
MIN
3.6
2.8
2.8
3.9
3.2
4.0
3.2
3.2
4.2
3.6
4.2
3.5
3.5
4.3
3.8
5.0
4.2
4.2
5.2
4.6
5.4
4.8
4.8
5.5
5.1
5.7
5.3
5.3
5.7
5.5
5.8
5.5
5.5
5.8
5.6
5.8
5.7
5.7
5.9
5.7
V
R
= 0 V & V
R
= 60 V
F = 1 MHz
Q
MIN
3,000
3,000
3,000
3,000
3,000
2,600
2,600
2,600
2,600
2,600
2,600
2,600
2,600
2,600
2,600
2,400
2,400
2,400
2,400
2,400
2,200
2,200
2,200
2,200
2,200
1,500
1,500
1,500
1,500
1,500
1,500
1,500
1,500
1,500
1,500
1,000
1,000
1,000
1,000
1,000
V
R
= 4 V
F = 50
MHz
C
P
TYP
pF
0.08
0.18
0.18
0.06
0.1
3
0.08
0.18
0.18
0.06
0.1
3
0.08
0.18
0.18
0.06
0.1
3
0.08
0.18
0.18
0.06
0.1
3
0.08
0.18
0.18
0.06
0.1
3
0.08
0.18
0.18
0.06
0.1
3
0.08
0.18
0.18
0.06
0.1
3
0.08
0.18
0.18
0.06
0.1
3
L
P
TYP
nH
0.4
0.5
1.0
0.4
0.35
0.4
0.5
1.0
0.4
0.35
0.4
0.5
1.0
0.4
0.35
0.4
0.5
1.0
0.4
0.35
0.4
0.5
1.0
0.4
0.35
0.4
0.5
1.0
0.4
0.35
0.4
0.5
1.0
0.4
0.35
0.4
0.5
1.0
0.4
0.35
Package
E28 / 28X
H20
T86
0805-2
p55
E28 / 28X
H20
T86
0805-2
p55
E28 / 28X
H20
T86
0805-2
p55
E28 / 28X
H20
T86
0805-2
p55
E28 / 28X
H20
T86
0805-2
p55
E28 / 28X
H20
T86
0805-2
p55
E28 / 28X
H20
T86
0805-2
p55
E28 / 28X
H20
T86
0805-2
P55
Test Conditions
F = 1 GHz
2
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
Revision Date: 10/05/05
60 V Silicon Varactor Diodes
MSV40,000 Series
Typical Performance,
Chips
10
100
MSV40,060
MSV40,064
MSV40,067
MSV40,069
10
MSV40,075
MSV40,082
MSV40,087
MSV40,092
C
J
(pF)
1
C
J
(pF)
1
0.1
1
10
100
0.1
0.1
0.1
1
10
100
V
R
(V)
V
R
(V)
Outline Drawings
C1
2
17 [.432]
13 [.330]
C22
> 2 [0.051]
17 [.432]
13 [.330]
Top Contact
Back Contact
6 [0.152]
4 [0.102]
E28
(non-hermetic)
Cut lead is Cathode
E28X
(non-hermetic)
178 [4.521]
162 [4.115]
50 [1.270]
40 [1.016]
Cathode Dot
100 [2.540]
Min. 2 Pls
25 [0.635]
15 [0.381]
95 [2.413]
85 [2.159]
50 [1.270] Max.
95 [2.413]
85 [2.159]
25 [0.635]
15 [0.381]
Epoxy
50 [1.270]
40 [1.016]
Ceramic
30 [0.762] Max.
Epoxy
15 [0.381]
8 [0.203]
5 [0.127]
3 [0.076]
20 [0.508]
10 [0.254]
30 [0.762]
20 [0.508]
Ceramic
8 [0.203]
4 [0.102]
14 [0.356] Max.
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
3
Revision Date: 10/05/05
60 V Silicon Varactor Diodes
MSV40,000 Series
Outline Drawings
(Continued)
H20
(hermetic)
Cut lead is Cathode
102 [2.591] Dia
81 [2.057]
23 [0.584]
17 [0.432]
P55
(hermetic)
55 [1.397]
51 [1.295]
Dia.
104 [2.642]
92 [2.337]
Square
130 [3.302]
Min. 2 Pls
Ceramic
Body
55 [1.397]
45 [1.143]
8 [0.203]
4 [0.102]
6 [0.152]
3 [0.076]
35 [0.889]
25 [0.635]
Cathode (P55)
Anode (P55p)
T86
(hermetic)
124 [3.150] Dia.
118 [2.997]
0805-02
(non-hermetic)
64 [1.626]
60 [1.524]
85 [2.159]
75 [1.905]
Epoxy
27 [0.686] Max.
55 [1.397]
45 [1.143]
Ceramic
Body
50 [1.270] Max.
Cathode Dot
225 [5.715]
205 [5.207]
Ceramic
64 [1.626]
60 [1.524]
64 [1.626] Dia.
60 [1.524]
83 [2.108] Dia.
77 [1.956]
33 [0.838]
27 [0.686]
Gold Metalization
16 [0.406]
12 [0.305]
40 [1.016] Min.
Bottom View
Cathode (T86)
Anode (T86p)
Aeroflex / Metelics
Aeroflex Microelectronic Solutions
975 Stewart Drive, Sunnyvale, CA 94085
TEL: 408-737-8181
Fax: 408-733-7645
www.aeroflex-metelics.com
sales@aeroflex-metelics.com
Aeroflex / Metelics, Inc. reserves the right to make changes to any products
and services herein at any time without notice. Consult Aeroflex or an
authorized sales representative to verify that the information in this data
sheet is current before using this product. Aeroflex does not assume any
responsibility or liability arising out of the application or use of any product
or service described herein, except as expressly agreed to in writing by
Aeroflex; nor does the purchase, lease, or use of a product or service from
Aeroflex convey a license under any patent rights, copyrights, trademark
rights, or any other of the intellectual rights of Aeroflex or of third parties.
Copyright 2003 Aeroflex / Metelics. All rights reserved.
Revision Date: 10/05/05
Our passion for performance is defined by three
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused.
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